A method of fabricating the semiconductor device includes the following steps. Forming a sacrificial portion at a first end of an upper electrode layer before a passivation layer is formed so that it supports a corresponding end portion of the passivation layer, making the passivation layer not suspended at all. In this way, the suspended portion of the passivation layer will not be damaged during the formation of a contact pad. In addition, subsequent to the formation of the contact pad, removing the sacrificial portion, freeing up a space under the end portion of the passivation layer so that the end portion itself becomes a suspended portion. This can ensure performance of the resulting semiconductor device.

Piezoelectric transducers are provided. The piezoelectric transducer includes a first piezoelectric layer, a second piezoelectric layer disposed on at least a portion of the first piezoelectric layer, and a middle electrode layer disposed between the first and second piezoelectric layers, where the middle electrode layer includes an inner region and an outer region spaced apart from the inner region. Methods of making the piezoelectric transducers are also provided. The piezoelectric transducers and methods find use in a variety of applications, including devices, such as electronics devices having one or more (e.g., an array) of the piezoelectric transducers.

An optical scanning device includes: a mirror that has an optical reflection surface; a mirror support unit configured to support the mirror; a pair of drive beams arranged on both sides of the mirror support unit and connected such that the mirror support unit is swingable; a drive source provided on the drive beams and configured to swing the mirror support unit, the drive source including a stack structure of a plurality of piezoelectric thin films; and a piezoelectric sensor formed on a connection beam connected to the drive source or the drive beams, a number of piezoelectric thin films included in the piezoelectric sensor being less than a number of the piezoelectric thin films included in the drive source.

A micromechanical component having at least one electromechanical flexible structure, each of which includes a first piezoelectric layer, a first outer electrode situated on a first side of the first piezoelectric layer, a first intermediate electrode situated on a second side, oriented away from the first side, of the first piezoelectric layer, a second piezoelectric layer situated on a side of the first intermediate electrode oriented away from the first piezoelectric layer, and a second outer electrode situated on a side of the second piezoelectric layer oriented away from the first intermediate electrode, the at least one electromechanical flexible structure having in each case a second intermediate electrode that is situated on the side of the first intermediate electrode oriented away from the first piezoelectric layer, between the second piezoelectric layer and the first intermediate electrode.

The oscillating element includes a crystal blank, a pair of excitation electrodes, and a pair of pad portions. The crystal blank includes a pair of major surfaces, at least partially configured by crystal planes, and side surfaces which connect outer edges of the pair of major surfaces. Further, it includes a mesa portion and an outer peripheral portion which surrounds the mesa portion and has a thickness between the pair of major surfaces thinner than that of the mesa portion. The excitation electrodes are individually located on the pair of major surfaces. The pair of pad portions are located on one of the pairs of major surfaces and are electrically connected with the excitation electrodes. At least a portion of an edge part which is in contact with a crystal plane includes a projecting portion, which does not exceed the height of the mesa portion from the outer peripheral portion.

A piezoelectric transducer includes a semiconductor body with a bottom electrode of conductive material. A piezoelectric element is on the bottom electrode. A first protective layer, on the bottom electrode and the piezoelectric element, has a first opening through which a portion of the piezoelectric element is exposed, and a second opening through which a portion of the bottom electrode is exposed. A conductive layer on the first protective layer and within the first and second openings is patterned to form a top electrode in electrical contact with the piezoelectric element at the first opening, a first biasing stripe in electrical contact with the top electrode, and a second biasing stripe in electrical contact with the bottom electrode at the second opening.

An electromechanical transducer element includes an electromechanical transducer film including a complex oxide that has a perovskite structure containing at least Pb, Zr and Ti; a pair of electrodes disposed to sandwich the electromechanical transducer film; and an insulating protective film covering the electromechanical transducer film and the pair of electrodes. Pb content of the electromechanical transducer film is uniform in a film thickness direction of the electromechanical transducer film, and a density of leak current measured between the pair of electrodes is 4.210.sup.6 A/cm.sup.2 or less in an environment in which a water vapor pressure is 300 kPa.

In a method for sputter depositing an additive-containing aluminium nitride film containing an additive element like Sc or Y, a first layer of the additive-containing aluminium nitride film is deposited onto a substrate disposed within a chamber by pulsed DC reactive sputtering. A second layer of the additive-containing aluminium nitride film is deposited onto the first layer by pulsed DC reactive sputtering. The second layer has the same composition as the first layer. A gas or gaseous mixture is introduced into the chamber when depositing the first layer. A gaseous mixture comprising nitrogen gas and an inert gas is introduced into the chamber when depositing the second layer. The percentage of nitrogen gas in the flow rate (in sccm) when depositing the first layer is greater than that when depositing the second layer.

Acoustic wave devices and methods of fabricating acoustic wave devices. A device includes a piezoelectric substrate and a conductor pattern formed on a surface of the piezoelectric substrate. The conductor pattern includes an interdigitated transducer (IDT) of a surface acoustic wave (SAW) resonator. The conductor pattern includes a substantially beryllium layer proximate the surface of the piezoelectric substrate.

A method for forming a Bulk Acoustic Wave (BAW) structure comprises forming a piezoelectric material on a first substrate; applying a first metal layer on a top surface of the piezoelectric material; forming a metal pattern on a second substrate, the metal pattern forming a cavity pattern between raised areas of the metal pattern; attaching the first metal layer to a top area of the metal pattern forming a plurality of cavity areas; removing the first substrate; and applying a second metal layer on a bottom surface of the piezoelectric material.