An acoustic wave device includes a functional electrode provided on a first main surface of an element substrate, extended wiring lines that are electrically connected to the functional electrode and that are adjacent to each other on a second main surface facing away from the first main surface, external terminals that are connected to the extended wiring lines, respectively, and that are provided on the second main surface, a first resin portion that seals the acoustic wave device, and a second resin portion that is provided at a position which is between the element substrate and the first resin portion and which is on the second main surface.

A method for manufacturing an inkjet print head includes determining a misfit strainelectric field crystal phase relation for at least one composition of a piezoelectric material; selecting a misfit strain value and a composition of the piezoelectric material based on the determined misfit strainelectric field crystal phase relation for said at least one composition; and based on the selected misfit strain and the selected composition of the piezoelectric material, forming a base layer and an actuator stack on the base layer, the actuator stack including the piezoelectric material, wherein the base layer and the actuator stack have predetermined properties providing the selected misfit strain value and the selected composition. Thus, an inkjet print head having a piezoelectric actuator that is operated on the basis of a crystal phase change is reliably manufacturable.

The present disclosure provides a power generator, its manufacturing method, and an electronic device utilizing the power generator as its power source. The power generator includes a deformation unit and a piezoelectric unit. The deformation unit is coupled to the piezoelectric unit; and the deformation unit comprises a conductive polymer, which is configured to deform upon contacting moisture to thereby apply a mechanical force to the piezoelectric unit to thereby generate electricity.

An elastic wave element includes a vibrator, an electrode pad, a UBM portion including a first end surface joined to the electrode pad, and a bump joined to a second end surface of the UBM portion. Joint terminals are defined by joining the electrode pad, the UBM portion, and the bump. A shortest distance between a specified joint terminal and remaining joint terminals is an inter-bump distance of the specified joint terminal. Second end surfaces of first and second joint terminal have areas greater than areas of second end surfaces of remaining joint terminals. The inter-bump distance of the first joint terminal is longer than the shortest inter-bump distance of the joint terminals and is the longest of the inter-bump distances. The second joint terminal is spaced the longest inter-bump distance from the first joint terminal.

A method for determining a threshold voltage for a batch of sensing chips includes steps of: a) selecting at least three of micro-machined transceivers; b) conducting for each of the at least three of the micro-machined transceivers the following sub-steps of: b1) introducing a blank liquid into a micro-channel via an inlet port, b2) applying an alternate voltage to a micro-machined transmitter for a period of time, and b3) measuring an amplitude of an electric signal from a micro-machined receiver to obtain a maximum value and a minimum value; c) measuring a mid-value; and d) determining the threshold voltage. Also disclosed is a method for increasing sensitivity of the batch of sensing chips based on the threshold voltage.

Embodiments of the present invention relates to the field of display technology, and particularly to a pressure force touch panel and a method for manufacturing the same, and a display apparatus including the abovementioned pressure force touch panel. In one embodiment, the pressure force touch panel comprises an array substrate and a color film substrate assembling with each other, and, the color film substrate comprises a black matrix, a plurality of spacers are provided at a side of the color film substrate facing the array substrate; grooves, in one-to-one correspondence with at least some of the spacers, are provided in a side surface of the array substrate facing the color film substrate, and a piezoelectric mechanism electrically connected to a detection circuit is mounted in each of the grooves and is located within a region of projection of the black matrix onto the array substrate; wherein, the piezoelectric mechanism generates an electrical signal when the spacer is pressed against the corresponding piezoelectric mechanism.

A stacked-die oscillator package includes an oscillator circuit die having inner bond pads, and outer bond pads, and a bulk acoustic wave (BAW) resonator die having a piezoelectric transducer with a first and second BAW bond pad on a same side coupled to a top and bottom electrode layer across a piezoelectric layer. A first metal bump is on the first BAW bond pad and a second metal bump is on the second BAW bond pad flip chip bonded to the inner bond pads of the oscillator circuit die. A polymer material is in a portion of a gap between the BAW and oscillator circuit die.

A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.

A bulk acoustic wave filter device and method thereof includes a first layer forming an air gap together with a substrate, a lower electrode disposed over the first layer, a piezoelectric layer disposed to cover a portion of the lower electrode, an upper electrode disposed over the piezoelectric layer, a frame layer disposed below the upper electrode, and a lower electrode reinforcing layer disposed on the lower electrode, other than portions in which the piezoelectric layer is disposed. The lower electrode reinforcing layer is formed by separating the lower electrode reinforcing layer from the upper electrode or the frame layer upon one of the upper electrode and the frame layer being formed.

A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.