H10F71/125

Photovoltaic devices and method of manufacturing

A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

METHODS OF FABRICATING METAL OXIDE AND/OR METALLOID OXIDE COATINGS AND RELATED PRODUCTS AND SYSTEMS

Methods of fabricating metal oxide and/or metalloid oxide coatings and related products and systems are generally described.

Method for activating an absorber layer of a thin-film solar cell

The invention refers to a method for activating an absorber layer of a semi-finished thin-film solar cell. The absorber layer comprises CdSe.sub.xTe.sub.1-x, CdSe, CdS or CdTe. The method comprises the steps of providing a semi-finished thin-film solar cell with an absorber layer comprising a CdSe.sub.xTe.sub.1-x, layer or comprising at least two layers selected from CdS, CdTe, ZnTe, CdSe, forming a polyvinylchloride film on a surface of the absorber layer, and performing a heat treatment of the semi-finished thin-film solar cell with the polyvinylchloride film on it, wherein the temperature is in the range of 300 C. to 500 C.

Method for manufacturing a copper-free CdTe based thin film solar cell device

A method for manufacturing a copper-free CdTe based thin film solar cell device, comprising the following steps: a) providing a substrate at least comprising a front electrode, b) depositing a CdTe based absorber layer, c) performing an activation treatment, d) applying a X-halogen to the CdTe based absorber layer, wherein X is selected out of a group consisting of P, As, Sb and V; e) performing a thermal treatment after step d) and f) depositing a back contact, characterized in that, the thermal treatment in step e) is performed before step f) and at temperatures in the range of 40 C. to 120 C. in inert atmosphere or vacuum for a duration in the range of 10 minutes to 60 minutes.

Doped photovoltaic semiconductor layers and methods of making

Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.