Heterostructures having germanium-seeded, shear-strained silicon quantum wells are provided. Also provided are gate-controlled qubits based on the heterostructures, and quantum computing systems based on the qubits. The heterostructures include a quantum well of germanium-seeded silicon positioned between two quantum barriers of germanium or a silicon-germanium alloy. The silicon of the quantum well is under a shear strain and is seeded with germanium such that the germanium concentration in the quantum well has an oscillating profile.

A quantum dot including a Group IIIA element and a Group VA element of the periodic table of elements, wherein the quantum dot has an absorption peak wavelength of greater than or equal to about 1,000 nm in a visible-infrared (Vis-IR) absorption spectrum, and includes a ligand derived from an aliphatic hydrocarbon compound substituted with a hydroxyl group (OH) and a thiol group (SH) on its surface, a method for preparing the quantum dot, and an electronic device including the quantum dot.

A method for making a qubit device comprising a chiral nanocrystal includes forming a gate electrode on a non-conducting substrate, forming an insulating layer over the back gate electrode, immobilizing a bottom face of a semiconductor nanocrystal onto the insulating layer, and placing two or more electrodes on, or in apposition to, a top face of the semiconductor nanocrystal.

The disclosure describes an adaptive and optimal imaging of individual quantum emitters within a lattice or optical field of view for quantum computing. Advanced image processing techniques are described to identify individual optically active quantum bits (qubits) with an imager. Images of individual and optically-resolved quantum emitters fluorescing as a lattice are decomposed and recognized based on fluorescence. Expected spatial distributions of the quantum emitters guides the processing, which uses adaptive fitting of peak distribution functions to determine the number of quantum emitters in real time. These techniques can be used for the loading process, where atoms or ions enter the trap one-by-one, for the identification of solid-state emitters, and for internal state-detection of the quantum emitters, where each emitter can be fluorescent or dark depending on its internal state. This latter application is relevant to efficient and fast detection of optically active qubits in quantum simulations and quantum computing.

A quantum information processing device including a semiconductor substrate. An optical resonator is coupled to the substrate. The optical resonator supports a first photonic mode with a first resonator frequency. The quantum information processing device includes a non-gaseous chalcogen donor atom disposed within the semiconductor substrate and optically coupled to the optical resonator. The donor atom has a transition frequency in resonance with the resonator frequency. Also disclosed herein are systems, devices, articles and methods with practical application in quantum information processing including or associated with one or more deep impurities in a silicon substrate optically coupled to an optical structure.

Disclosed are an MPS diode device and a preparation method therefor. The MPS diode device comprises a plurality of cells arranged in parallel, wherein each cell comprises a cathode electrode, and a substrate, epitaxial layer, buffer layer, and anode electrode that are formed in succession on the cathode electrode; two active regions are formed on the side of the epitaxial layer away from the substrate; the width of forbidden band of the buffer layer is greater than the width of forbidden band of the epitaxial layer, and a material of the buffer layer and a material of the epitaxial layer are allotropes; and first openings are formed at the positions in the buffer layer opposite to the active regions, and an ohmic metal layer is formed in the first openings.

A quantum information processing device including a semiconductor substrate. An optical resonator is coupled to the substrate. The optical resonator supports a first photonic mode with a first resonator frequency. The quantum information processing device includes a non-gaseous chalcogen donor atom disposed within the semiconductor substrate and optically coupled to the optical resonator. The donor atom has a transition frequency in resonance with the resonator frequency. Also disclosed herein are systems, devices, articles and methods with practical application in quantum information processing including or associated with one or more deep impurities in a silicon substrate optically coupled to an optical structure.

A transistor with improved low-frequency noise characteristics is disclosed. Phase complexing channel layer having quantum dots distributed within an amorphous matrix is formed, and a surface stabilization layer is formed in contact with the phase complexing channel layer. The surface stabilization layer has a repeating structure of an inorganic insulating layer and an organic shielding layer. Since the quantum dots of the phase complexing channel layer are in a quantized state, carriers trapped in the quantum dots are limited. Even if current is generated at the phase complexing channel layer by the drain-source voltage, the carriers trapped at the quantum dots are maintained at a constant level. Accordingly, the drain-source current is constant even when the gate voltage increases, and the noise component of the gate voltage is not reflected in the drain current.

A quantum device formed from a substrate, the substrate being covered with a semiconductor region forming a quantum dot, and a detection structure with a Coulomb blockade for detecting a state of charge of the quantum dot, the detection structure with the Coulomb blockade including a detection island disposed above and facing the quantum dot and coupled to the quantum dot by electrostatic coupling, the detection structure further including a first tunnel junction between the detection island and a first gate block, the first gate block being juxtaposed with the detection island.