A method of making a GaN device includes: forming a GaN substrate; forming a plurality of spaced-apart first metal contacts directly on the GaN substrate; forming a layer of insulating GaN on the exposed portions of the upper surface; forming a stressor layer on the contacts and the layer of insulating GaN; forming a handle substrate on the first surface of the stressor layer; spalling the GaN substrate that is located beneath the stressor layer to separate a layer of GaN and removing the handle substrate; bonding the stressor layer to a thermally conductive substrate; forming a plurality of vertical channels through the GaN to define a plurality of device structures; removing the exposed portions of the layer of insulating GaN to electrically isolate the device structures; forming an ohmic contact layer on the second surface; and forming second metal contacts on the ohmic contact layer.

Systems and methods for fabricating a photovoltaic structure are provided. During fabrication, a patterned mask is formed on a first surface of a multilayer body of the photovoltaic structure, with openings of the mask corresponding to grid line locations of a first grid. Subsequently, a core layer of the first grid is deposited in the openings of the patterned mask, and a protective layer is deposited on an exposed surface of the core layer. The patterned mask is then removed to expose the sidewalls of the core layer. Heat is applied to the protective layer such that the protective layer reflows to cover both the exposed surface and sidewalls of the core layer.

One embodiment of the present invention provides a photovoltaic cell. The photovoltaic cell includes a multi-layer semiconductor structure with at least one tapered corner and an electrode that includes a metallic grid having a plurality of finger lines and a single busbar with multiple segments coupled to the finger lines. The single busbar is configured to collect current from the finger lines. The busbar may have a center portion and side portion(s). The side portion(s) may be connected to the center portion forming a non-180-degree angle with the center portion. The finger lines may also be connected to the side portion(s).

An optoelectronic device including at least one of a solar device, a semiconductor device, and an electronic device. The device includes a semiconductor unit. A plurality of metal fingers is disposed on a surface of the semiconductor unit for electrical conduction. Each of the metal fingers corresponds to a section of the optoelectronic device. A plurality of pad areas is available for connection to a bus bar, wherein each of the metal fingers is connected to a corresponding pad area for forming an electrical contact. The optoelectronic device includes a bad section, wherein the bad section is associated with a compromised metal finger and a compromised pad area. A dielectric spot coating is disposed above the compromised pad area to electrically isolate the bad section.

A solar cell includes: first and second conductivity type diffusion layers which are formed on a backside of a light-receiving surface of a substrate, first and second electrode portions, first and second electrode line portions, and first and a second electrode bus bar portions; a first insulator film which is formed to cover a side portion and a top of the second electrode portion in an intersection region of the second electrode portion and the first electrode bus bar portion, a second insulator film which is formed to cover a side portion and a top of the first electrode portion in an intersection region of the first electrode portion and the second electrode bus bar portion, wherein the second electrode portion is formed continuously in a line shape under the first insulator film, and the first electrode portion is formed continuously in a line shape under the second insulator film.

A solar cell having an electrical modulating stack layer is provided. The solar cell includes a first electrode, a second electrode, a photoelectric conversion layer, disposed between the first electrode and the second electrode. A first electrical modulating stack layer is disposed on the first electrode, wherein the first electrical modulating stack layer includes at least one positively charged layer and at least one negatively charged layer or the first electrical modulating layer includes a first surface modification layer.

A solar cell and a solar cell module including a plurality of solar cells are discussed. The solar cell according to an embodiment includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type disposed on the substrate, a plurality of first electrodes electrically connected to the emitter layer, a second electrode electrically connected to the substrate, a first current collector electrically connected to the plurality of first electrodes, and a second current collector electrically connected to the second electrode. The second current collector includes a plurality of second electrode current collectors electrically connected to the second electrode, and a current collector connector for connecting the plurality of second electrode current collectors to one another.

A solar cell module is provided with: a plurality of solar cells, each of which comprises a first electrode and a second electrode that are formed on a photoelectric conversion unit; and a wiring material that is fitted on the first electrode and the second electrode using an adhesive and connects the solar cells with each other. The adhesive is provided so as to extend beyond a region (R) directly below the wiring material and to adhere to a lateral surface of the wiring material. The solar cell module has a pore in the region (R) directly below the wiring material.

This invention relates to cells and devices for harvesting light. Specifically the cell comprises at least one electrode which comprises graphene or modified graphene and layer of a transition metal dichalcogenide in a vertical heterostructure. The cell may be part of a light harvesting device. The invention also relates to materials and methods for making such cells and devices.

A stacked-layered thin film solar cell. The solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.