Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

A light receiving and emitting element module includes a substrate; a light emitting element and a light receiving element on an upper surface of the substrate; a frame-shaped outer wall that on the upper surface of the substrate; and a light shielding wall that is positioned inside the outer wall and partitions an internal space of the outer wall into spaces respectively corresponding to the light emitting element and the light receiving element. The light shielding wall includes a light emitting element-side shading surface on the light emitting element side, a light receiving element-side shading surface on the light receiving element side, and a lower surface that is connected to each of the light emitting element-side shading surface and the light receiving element-side shading surface, and that faces the substrate. The lower surface has an inclined surface inclined with respect to the upper surface of the substrate.

An optical component including a multi-layer substrate, an optical waveguide element, and two optical-electro assemblies is provided. The multi-layer substrate includes a dielectric layer, two circuit layers, and two through holes passing through the dielectric layer. The optical waveguide element is located on the multi-layer substrate and between the through holes. The optical-electro assemblies are respectively inserted into the corresponding through holes and correspondingly located at two opposite ends of the optical waveguide element. One of the optical-electro assemblies transforms an electrical signal into a light beam and provides the light beam to the optical waveguide element, and the other one of the optical-electro assemblies receives the light beam transmitted from the optical waveguide element and transforms the light beam into another electrical signal. A manufacturing method of the optical component and an optical-electro circuit board having the optical component are also provided.

A photoconductive device that generates or detects terahertz radiation includes a semiconductor layer; a structure portion; and an electrode. The semiconductor layer has a thickness no less than a first propagation distance and no greater than a second propagation distance, the first propagation distance being a distance that the surface plasmon wave propagates through the semiconductor layer in a perpendicular direction of an interface between the semiconductor layer and the structure portion until an electric field intensity of the surface plasmon wave becomes 1/e times the electric field intensity of the surface plasmon wave at the interface, the second propagation distance being a distance that a terahertz wave having an optical phonon absorption frequency of the semiconductor layer propagates through the semiconductor layer in the perpendicular direction until an electric field intensity of the terahertz wave becomes 1/e.sup.2 times the electric field intensity of the terahertz wave at the interface.

A semiconductor device includes a light emitting element comprising a substrate having a first and a second surface and an outer edge connecting the first and second surfaces. A light emitting layer is on a central portion of the first surface but not on a peripheral portion between the central portion and the outer edge of the substrate. A first insulating layer is disposed on the peripheral portion of the first surface, a side surface of the light emitting layer, and a third surface of the light emitting layer that is spaced from the first surface of the substrate. A first electrode is electrically contacting the third surface of the light emitting layer. A light receiving element is provided in a propagation path of light emitted from the light emitting element.

An integrated sensor package for an electronic device may include a matrix material defining a body structure of the integrated sensor package, a light emitting diode at least partially encapsulated in the matrix material, a photodiode at least partially encapsulated in the matrix material and configured to detect light emitted by the light emitting diode and reflected by an object external to the integrated sensor package, a via structure at least partially encapsulated in the matrix material, a permanent magnet at least partially encapsulated in the matrix material, a first conductive member on a first side of the integrated sensor package and conductively coupling the light emitting diode to a first end of the via structure, and a second conductive member on a second side of the integrated sensor package opposite the first side and conductively coupled to a second end of the via structure.

This invention relates to an optical module package structure. A substrate is defined with a light receiving region and a light emitting region. A light receiving chip and a light emitting chip are disposed on the light receiving region and the light emitting region of the substrate, respectively. An electronic unit is disposed on the substrate and electrically connected to the light emitting chip. Two encapsulating gels are coated on each of the chips and the electronic unit. A cover is disposed on the substrate and has a light emitting hole and a light receiving hole, located above the light emitting chip and the light receiving chip, respectively. In this way, the package structure of the optical module of the present invention integrates passive components, functional ICs or dies into a module, and the optical module provides the functions of current limiting or function adjustment.

Fabricating an optics wafer includes providing a wafer comprising a core region composed of a glass-reinforced epoxy, the wafer further comprising a first resin layer on a top surface of the core region and a second resin layer on a bottom surface of the core region. The core region and first and second resin layers are substantially non-transparent for a specific range of the electromagnetic spectrum. The wafer further includes vertical transparent regions that extend through the core region and the first and second resin layers and are composed of a material that is substantially transparent for the specific range of the electromagnetic spectrum. The wafer is thinned, for example by polishing, from its top surface and its bottom surface so that a resulting thickness is within a predetermined range without causing glass fibers of the core region to become exposed. Respective optical structures are provided on one or more exposed surfaces of at least some of the transparent regions.

An optical coupling device includes a primary conductive plate, a light-emitting part, a secondary conductive plate, a light-receiving part, and a first conductive part. The light-emitting part is located on the primary conductive plate, converts an electrical signal to light, and emits the light. The secondary conductive plate is spaced apart from the primary conductive plate, and faces the light-emitting part. The light-receiving part is disposed on the secondary conductive plate to face the light-emitting part, and converts light from the light-emitting part to an electrical signal. The first conductive part is disposed at a side facing the light-emitting part, and has a point on which an electric field generated by a potential difference between the primary conductive plate and the secondary conductive plate is concentrated.