The embodiments of the present disclosure provide a proximity sensor, an electronic apparatus and a method for manufacturing a proximity sensor. The proximity sensor comprises a substrate, a sensor chip, a light-emitting device, a non-transparent isolation structure and a non-transparent molding material, wherein the sensor chip is located on the substrate and electrically coupled to the substrate; the light-emitting device is located on the sensor chip and electrically coupled to the sensor chip; the non-transparent isolation structure is located on the sensor chip and isolates the light-emitting device from a sensor region of the sensor chip; and the non-transparent molding material at least partially covers the substrate, the sensor chip and the non-transparent isolation structure, such that a portion of the proximity sensor which is located right above the sensor region and the light-emitting device is not covered by the non-transparent molding material.

The invention provides a photocoupler package. The photocoupler package includes a light-emitting diode (LED) mounted on a first lead frame, electrically connected to the first lead frame. A photodetector is mounted on a second lead frame, electrically connected to the second lead frame. A first insulating material is disposed on the first lead frame, surrounding the LED. A second insulating material is disposed on the second lead frame, surrounding the photodetector. A third insulating material encapsulates the first insulating material and the LED. A third insulating material also encapsulates the second insulating material and the photodetector. This photocoupler possesses high photocoupling efficiency, small volume, and superior high-isolation capability.

Fabricating an optics wafer includes providing a wafer including a core region composed of a glass-reinforced epoxy. The wafer further includes a first resin layer on a top surface of the core region and a second resin layer on a bottom surface of the core region. The core region and first and second resin layers are substantially non-transparent for a specific range of the electromagnetic spectrum. The wafer further includes vertical transparent regions that extend through the core region and the first and second resin layers and are composed of a solid material that is substantially transparent for the specific range of the electromagnetic spectrum. The wafer is thinned, and optical structures are provided on one or more exposed surfaces of at least some of the transparent regions.

An electronic device includes a substrate, an optical sensor coupled to the substrate, and an optical emitter coupled to the substrate. A lens is aligned with the optical emitter and includes an upper surface and an encapsulation bleed stop groove around the upper surface. An encapsulation material is coupled to the substrate and includes first and second encapsulation openings therethrough aligned with the optical sensor and the lens, respectively.

A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern. The pixel electrode is connected to the pixel switching element. The reference line is in parallel with the data line. The control switching element is connected to the reference line and the gate line, includes a second semiconductor pattern. The bias line is in parallel with the gate line. The light sensing element is connected to the bias line and the control switching element, includes a third semiconductor pattern. The sensing capacitor is connected to the light sensing element and a storage line. The light blocking filter pattern transmits a first light, and blocks a second light.

An optical fiber is provided between a photodiode and a semiconductor active portion of a wide gap semiconductor element forming portion such that emitted light at the time of light emission of the semiconductor active portion of the wide gap semiconductor element forming portion is incident from an incident surface of the optical fiber, and is received from an emitting surface to the photodiode through the optical fiber. Specifically, the incident surface of the optical fiber is arranged so as to be opposed to a side surface portion of the wide gap semiconductor element forming portion, so that the emitted light at the time of light emission of the wide gap semiconductor element is incident on the incident surface.

A light receiving and emitting element module includes a substrate; a light emitting element and a light receiving element on an upper surface of the substrate; a frame-shaped outer wall that on the upper surface of the substrate; and a light shielding wall that is positioned inside the outer wall and partitions an internal space of the outer wall into spaces respectively corresponding to the light emitting element and the light receiving element. The light shielding wall includes a light emitting element-side shading surface on the light emitting element side, a light receiving element-side shading surface on the light receiving element side, and a lower surface that is connected to each of the light emitting element-side shading surface and the light receiving element-side shading surface, and that faces the substrate. The lower surface has an inclined surface inclined with respect to the upper surface of the substrate.

An optical sensor is described that includes a light emitter and a photodetector assembly directly attached to a transparent substrate. In one or more implementations, the optical sensor comprises at least one light emitter and a photodetector assembly (e.g., photodiodes, phototransistors, etc.). The light emitter(s) and the photodetector assembly are directly mounted (e.g., attached) to a transparent substrate.

A method of mounting a semiconductor element, the method includes: attaching a first solder joint material onto a first pad formed on a substrate supplying a second solder joint material onto the first solder joint material, a second melting point of the second solder joint material being lower than a first melting point of the first solder joint material; arranging the semiconductor element so that a second pad formed on the semiconductor element faces the first pad and a joint gap is provided between the semiconductor element and the substrate; and performing reflow at a reflow temperature lower than the first melting point and higher than the second melting point to join the first solder joint material and the second solder joint material.

An optical data communication and power converter device includes a receiver circuit comprising an optical receiver. The optical receiver includes a photovoltaic device and a photoconductive device arranged within an area that is configured for illumination by a modulated optical signal emitted from a monochromatic light source of a transmitter circuit. The photovoltaic device is configured to generate electric current responsive to the illumination of the area by the modulated optical signal. The photoconductive device is configured to generate a data signal, distinct from the electric current, responsive to the illumination of the area by the modulated optical signal. A reverse bias voltage may be applied to the photoconductive device by the photovoltaic device, independent of an external voltage source. Related devices and methods of operation are also discussed.