A flexible display includes a plurality of pixel chips, chixels, provided on a flexible substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a desired bend radius of the display. The flexible substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.

A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.

Sodium-containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points 540 C., thermal expansion coefficient of from 6.5 to 9.5 ppm/ C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including CuZnSnS(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

A method for manufacturing a thin-film solar cell module includes a rear surface electrode layer deposition step for depositing a rear surface electrode layer on a substrate, an alkali metal adding step for adding an alkali metal to the rear surface electrode layer, a light absorbing layer deposition step for depositing a light absorbing layer on the rear surface electrode layer, a division groove forming step for forming a division groove that divides the light absorbing layer and exposing a front surface of the rear surface electrode layer in the division groove, an alloying step for alloying the rear surface electrode layer and the alkali metal on the front surface of the rear surface electrode layer exposed in the division groove, and a transparent conductive film deposition step for depositing a transparent conductive film on the light absorbing layer and in the division groove.

Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn.sub.(1-x)Ga.sub.xSe.sub.2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.

A solar cell includes a metal layer and a chalcopyrite compound semiconductor layer in this order on a polyimide film. A manufacturing method according to the present invention includes the following steps in the order: cast applying a polyimide precursor solution onto a support base containing an alkali metal; imidizing the polyimide precursor by heating to form a stacked body including a polyimide film on the support base; forming a metal layer on the polyimide film of the stacked body; and forming a chalcopyrite compound semiconductor layer on the metal layer.

Disclosed is a photovoltaic device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a photovoltaic layer provided on the substrate, and an electrode provided on the photovoltaic layer. According to the present invention, a photovoltaic device having high photoelectric conversion efficiency can be inexpensively provided.

Monolithic tandem chalcopyrite-perovskite photovoltaic devices and techniques for formation thereof are provided. In one aspect, a tandem photovoltaic device is provided. The tandem photovoltaic device includes a substrate; a bottom solar cell on the substrate, the bottom solar cell having a first absorber layer that includes a chalcopyrite material; and a top solar cell monolithically integrated with the bottom solar cell, the top solar cell having a second absorber layer that includes a perovskite material. A monolithic tandem photovoltaic device and method of formation thereof are also provided.

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including CuZnSnS(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.