A ceramic substrate including a base having a first surface, a second surface opposite to the first surface, and a through hole having a first opening diameter at the first surface and a second opening diameter at the second surface. The first opening diameter is larger than the second opening diameter. The ceramic substrate also includes at least one solid particle disposed in the through hole, and an electrically-conductive member disposed in the through hole. A thermal conductivity of the at least one solid particle is higher than a thermal conductivity of the electrically-conductive member. The electrically-conductive member is continuous between the first surface and the second surface.

An LED lamp core, an LED chip, and a method for manufacturing the LED chip are provided. A heat conductive core (6) using the structure of taper column or taper threaded column can be conveniently installed, and solves the heat conductive problem from the standardization of the LED lamp core. A heat diffusion plate (2) is made of copper or aluminum, and the area and the thickness thereof should be large enough, so as to achieve the effect of heat diffusion. A wafer (1) is welded on the heat diffusion plate (2), reducing the temperature difference between the wafer (1) and the heat diffusion plate (2) is primary and the insulation between the same is secondary. A high voltage insulation layer (4), which is required for safety, is provided between the heat diffusion plate (2) and the heat conductive core (6), and the heat flux density between the heat diffusion plate (2) and the heat conductive core (6) has already been reduced by the heat diffusion plate (2). The technique using a wafer locating plate solves the problem of aligning weld, costly equipment and low production efficiency.

In accordance with certain embodiments, heat-dissipating elements are integrated with semiconductor dies and substrates in order to facilitate heat dissipation therefrom during operation.

Various implementations relating to an illumination package including an edge-emitting laser diode (EELD) are disclosed. In one embodiment, an illumination package includes a heat spreader including a base and a stub that extends from the base, an EELD configured to generate illumination light, the EELD being mounted to a side surface of the stub, and a substrate coupled to the base at a location spaced from the EELD, the substrate being electrically connected to the EELD.

Disclosed herein is a light emitting device. The light emitting device is provided to include a light emitting structure, a first electrode pad, a second electrode pad and a heat dissipation pad, and a substrate on which the light emitting diode is mounted. The substrate includes a base; an insulation pattern formed on the base; and a conductive pattern disposed on the insulation pattern. The base includes a post and a groove separating the post from the conductive pattern. An upper surface of the post is placed lower than an upper surface of the conductive pattern, the heat dissipation pad contacts the upper surface of the post, and the first electrode pad and the second electrode pad contact the conductive pattern. With this structure, the light emitting device has excellent properties in terms of electrical stability and heat dissipation efficiency.

A light source module includes a frame having a plurality of mounting surfaces at different levels and side surfaces respectively connected to the plurality of mounting surfaces; a plurality of heat dissipaters respectively disposed on the plurality of mounting surfaces and extending to cover a side surface of the frame; and a light source including a plurality of light emitting devices respectively disposed on the plurality of heat dissipaters and respectively positioned above the plurality of mounting surfaces.

A light-emitting device includes a semiconductor epitaxial structure including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked in such order in a stacking direction, and including a plurality of through holes. The through holes extend downwardly in a direction from the second semiconductor layer to the first semiconductor layer. The through holes expose a portion of a surface of the first semiconductor layer. The light-emitting device has an ampacity. Each of the through holes has a first radius. A ratio of the first radius to the ampacity ranges from 0.1 to 0.4. A light-emitting apparatus including the light-emitting device is also provided.

A tiled array of hybrid assemblies and a method of forming such an array enables the assemblies to be placed close together. Each assembly comprises first and second dies, with the second die mounted on and interconnected with the first die. Each vertical edge of a second die which is to be located adjacent to a vertical edge of another second die in the tiled array is etched such that the etched edge is aligned with a vertical edge of the first die. Indium bumps are deposited on a baseplate where the hybrid assemblies are to be mounted, and the assemblies are mounted onto respective indium bumps using a hybridizing machine, enabling the assemblies to be placed close together, preferably 10 m. The first and second dies may be, for example. a detector and a readout IC, or an array of LEDs and a read-in IC.

Disclosed are a light emitting device package. The light emitting device package includes a body having recess; a first lead frame including a first and second portions on a first region of the body; a second lead frame including a third and fourth portions on a second region of the body; a third lead frame between the first and second lead frame. The body has a length of the first direction greater than a width of the second direction, wherein the second portion of the first lead frame extends toward the second lead frame and has a small width, and wherein the fourth portion of the second lead frame extends toward the first lead frame. A first light emitting device is disposed on the first portion of the first lead frame and a second light emitting device is disposed on the third portion of the second lead frame.

A method for producing a wavelength conversion member includes preparing an element-disposed substrate including a substrate, a plurality of phosphor ceramic elements disposed on the substrate in spaced-apart relation in a direction perpendicular to the thickness direction of the substrate; embedding the plurality of phosphor ceramic elements in a curable layer containing the inorganic substance; producing a cover layer by curing the curable layer; and cutting the cover layer and the substrate in the thickness direction so as to include at least one of the phosphor ceramic elements.