A semiconductor device has a transistor portion including a collector region and a diode portion including a cathode region. A semiconductor substrate has a buffer region in contact with the collector region and the cathode region. A p-type impurity concentration in the collector region and the cathode region ranges such that a first convex curve and a second convex curve located above the first convex curve are formed in the thickness direction. An n-type impurity concentration in the cathode region ranges in the thickness direction such that a third convex curve having a higher concentration than the first convex curve is formed within a thickness range of the first convex curve, and that a fourth convex curve having a higher concentration than the second convex curve is formed within a thickness range of the second convex curve.

Silicon carbide junction barrier Schottky diode disclosed. Silicon carbide junction barrier Schottky diode includes a first conductivity-type substrate, a first conductivity-type epitaxial layer, being formed by epitaxial growth of silicon carbide doped with a first conductivity-type impurity on the first conductivity-type substrate, a charge injection region, being formed on the first conductivity-type epitaxial layer and doped at a concentration of the first conductivity-type impurity higher than that of the first conductivity-type epitaxial layer, a second conductivity-type junction region, being formed on the first conductivity-type epitaxial layer so as to contact the charge injection region, a Schottky metal layer, being formed on the charge injection region and the second conductivity-type junction region, an anode electrode, being formed on the Schottky metal layer, and a cathode electrode, being formed under the first conductivity-type substrate.

Silicon carbide junction barrier Schottky diode disclosed. Silicon carbide junction barrier Schottky diode includes a first conductivity-type substrate, a first conductivity-type epitaxial layer, being formed by epitaxial growth of silicon carbide doped with a first conductivity-type impurity on the first conductivity-type substrate, a charge injection region, being formed on the first conductivity-type epitaxial layer and doped at a concentration of the first conductivity-type impurity higher than that of the first conductivity-type epitaxial layer, a second conductivity-type junction region, being formed on the first conductivity-type epitaxial layer so as to contact the charge injection region, a Schottky metal layer, being formed on the charge injection region and the second conductivity-type junction region, an anode electrode, being formed on the Schottky metal layer, and a cathode electrode, being formed under the first conductivity-type substrate.

Provided is a semiconductor device including a buffer region. Provided is a semiconductor device including: semiconductor substrate of a first conductivity type; a drift layer of the first conductivity type provided in the semiconductor substrate; and a buffer region of the first conductivity type provided in the drift layer, the buffer region having a plurality of peaks of a doping concentration, wherein the buffer region has: a first peak which has a predetermined doping concentration, and is provided the closest to a back surface of the semiconductor substrate among the plurality of peaks; and a high-concentration peak which has a higher doping concentration than the first peak, and is provided closer to an upper surface of the semiconductor substrate than the first peak is.

Provided is a semiconductor device including a buffer region. Provided is a semiconductor device including: semiconductor substrate of a first conductivity type; a drift layer of the first conductivity type provided in the semiconductor substrate; and a buffer region of the first conductivity type provided in the drift layer, the buffer region having a plurality of peaks of a doping concentration, wherein the buffer region has: a first peak which has a predetermined doping concentration, and is provided the closest to a back surface of the semiconductor substrate among the plurality of peaks; and a high-concentration peak which has a higher doping concentration than the first peak, and is provided closer to an upper surface of the semiconductor substrate than the first peak is.

A semiconductor chip of a TVS diode includes a first pin junction portion of a first polarity direction and a diode pair region. The diode pair region includes a first reverse pin junction portion of a second polarity direction provided spaced apart from the first pin junction portion in a plan view, and a pn junction portion of the first polarity direction that forms a diode pair with the first reverse pin junction portion. The first pin junction portion includes a p-type first-terminal-side high-concentration region, an n-type first-terminal-side low-concentration region at a position overlapping the first-terminal-side high-concentration region in the plan view, an n-type first-terminal-side contact region, and a p-type first buffer region in contact with the first-terminal-side high-concentration region between the first-terminal-side high-concentration region and the first-terminal-side low-concentration region in a thickness direction of the semiconductor chip.

A semiconductor chip of a TVS diode includes a first pin junction portion of a first polarity direction and a diode pair region. The diode pair region includes a first reverse pin junction portion of a second polarity direction provided spaced apart from the first pin junction portion in a plan view, and a pn junction portion of the first polarity direction that forms a diode pair with the first reverse pin junction portion. The first pin junction portion includes a p-type first-terminal-side high-concentration region, an n-type first-terminal-side low-concentration region at a position overlapping the first-terminal-side high-concentration region in the plan view, an n-type first-terminal-side contact region, and a p-type first buffer region in contact with the first-terminal-side high-concentration region between the first-terminal-side high-concentration region and the first-terminal-side low-concentration region in a thickness direction of the semiconductor chip.

A semiconductor chip of a TVS diode includes a first surface and a second surface at aside opposite the first surface. The semiconductor chip includes first and second pin junctions fora first polarity direction, and a diode-paired region. The diode-paired region includes a high-concentration region of a first conductance type, first and second low-concentration regions that have a lower impurity concentration than the high-concentration region, an isolation region isolating the first and second low-concentration regions, first and second contact regions of a second conductance type, and an internal region of the second conductance type contacting the high-concentration region and arranged closer to the second surface than the high-concentration region. The internal region is arranged overlapping both the first and second low-concentration regions in plan view.

A semiconductor chip of a TVS diode includes a first surface and a second surface at aside opposite the first surface. The semiconductor chip includes first and second pin junctions fora first polarity direction, and a diode-paired region. The diode-paired region includes a high-concentration region of a first conductance type, first and second low-concentration regions that have a lower impurity concentration than the high-concentration region, an isolation region isolating the first and second low-concentration regions, first and second contact regions of a second conductance type, and an internal region of the second conductance type contacting the high-concentration region and arranged closer to the second surface than the high-concentration region. The internal region is arranged overlapping both the first and second low-concentration regions in plan view.

Merged-PiN-Schottky, MPS, device comprising: a solid body having a first electrical conductivity; an implanted region extending into the solid body facing a front side of the solid body, having a second electrical conductivity opposite to the first electrical conductivity; and a semiconductor layer extending on the front side, of a material which is a transition metal dichalcogenide, TMD. A first region of the semiconductor layer has the second electrical conductivity and extends in electrical contact with the implanted region, and a second region of the semiconductor layer has the first electrical conductivity and extends adjacent to the first region and in electrical contact with a respective surface portion of the front side having the first electrical conductivity.