H10F77/707

PRE-TEXTURED SILICON WAFER AND PREPARATION METHOD THEREOF, TEXTURED WAFER, AND SOLAR CELL
20250318320 · 2025-10-09 ·

Provided are a pre-textured silicon wafer and a preparation method thereof, a textured wafer, and a solar cell. The pre-textured silicon wafer includes a substrate layer and a pre-textured layer provided on a surface of at least one side of the substrate layer. The pre-textured layer includes a plurality of protrusions, each protrusion is in a shape of a quadrangular frustum pyramid, and a length of a bottom edge of the protrusion ranges from 2 m to 8 m.

SEGMENTED SOLAR CELL, METHOD FOR FORMING THE SAME AND PHOTOVOLTAIC MODULE
20250318319 · 2025-10-09 ·

The present disclosure relates to the technical field of photovoltaics, and in particular, to a segmented solar cell, a method for forming the same, and a photovoltaic module. The segmented solar cell is formed by cutting a solar cell, and the segmented solar cell includes a substrate and a cutting surface formed by cutting a solar cell to form the segmented solar cell. The cutting surface exposes a cross section of the substrate. At least part of the cutting surface includes a first texture structure, the first texture structure includes polygonal portions, and at least one polygonal portion of the polygonal portions partially overlaps with at least one neighboring polygonal portion of the polygonal portions. According to the present disclosure, it is conducive to at least improving performance of the segmented solar cell and the photovoltaic module.

Bonded semiconductor light-receiving device and method for manufacturing bonded semiconductor light-receiving device
12438101 · 2025-10-07 · ·

A bonded semiconductor light-receiving device including an epitaxial layer to serve as a device-functional layer, and a support substrate made of a material different from that of the device-functional layer and bonded to the epitaxial layer via a bonding material layer. The device-functional layer has a bonding surface with an uneven pattern formed thereon.

Hybrid heterojunction solar cell, cell component and preparation method
12446353 · 2025-10-14 · ·

The present disclosure provides a hybrid heterojunction solar cell, a cell component, and a preparation method, the hybrid heterojunction solar cell comprises a semiconductor substrate having a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell; at least two composite layers located on one side of the substrate front surface, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface. The hybrid heterojunction solar cell, cell component and a preparation method provided by this disclosure can achieve a stable passivation effect on the cell surface, reduce light absorption in the non-metallic areas of the cell, and achieve better process control at the same time.

Solar cell, method for manufacturing the same, photovoltaic device, and photovoltaic system
12457820 · 2025-10-28 · ·

The application provides a solar cell, a manufacturing method, a photovoltaic device and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, an anti-reflection layer, a passivation contact layer, and a second passivation layer. The substrate includes opposite first and second surfaces, and side surfaces between the first and second surfaces. The doped conducting layer and the first passivation layer are sequentially stacked on the first surface. The anti-reflection layer is stacked on the first passivation layer and covers the first surface to cover the first passivation layer. The passivation contact layer is stacked on the second surface. The second passivation layer is stacked on the passivation contact layer and covers the second surface to cover the passivation contact layer. The anti-reflection layer or the second passivation layer covers at least part of at least one side surface of the substrate.

Heterojunction battery, preparation method therefor, and application thereof
12490545 · 2025-12-02 · ·

A heterojunction battery, a preparation method therefor, and an application thereof are provided. The heterojunction battery includes a substrate, a first intrinsic amorphous silicon layer, an N-type doped amorphous silicon layer or microcrystalline silicon layer or nanocrystalline silicon layer, a first transparent conductive oxide layer, a second intrinsic amorphous silicon layer, a P-type doped amorphous silicon layer or microcrystalline silicon layer or nanocrystalline silicon layer, a second transparent conductive oxide layer, and a dielectric film. The heterojunction battery further includes a metal mesh. The metal mesh penetrates through the dielectric film and is fixedly connected to the first transparent conductive oxide layer and the second transparent conductive oxide layer, respectively. The metal mesh is composed of multiple first metal wires and multiple second metal wires. The first metal wires are perpendicular to the second metal wires.

ASYMMETRIC LIGHT TRANSMISSION SURFACES FOR ENHANCING EFFICIENCY OF SOLAR CONCENTRATORS

A luminescent solar concentrator including a light propagation device, one or more photovoltaic cells, and one or more waveguides is provided. The light propagation device includes a plurality of nanostructures configured to permit preferential propagation of a wavelength range of light in one direction. The one or more photovoltaic cells are positioned adjacent an end of the light propagation device. The one or more waveguides are configured to guide light toward the one or more photovoltaic cells via total internal reflection within the luminescent solar concentrator.

Photonic Surface-Topography in Single Photon Avalanche Diodes
20250359358 · 2025-11-20 ·

A photodetector with a photonic surface topography is provided. The photodetector includes a semiconductor layer having a top surface, a body having a first type of doping, and a first region having a second type of doping different from the first type. A first fraction of a surface area of the top surface of the semiconductor layer comprises a surface topography. The semiconductor layer further includes a junction formed between the body and the first region, wherein the junction is configured to have respective surface area that is a second fraction of the surface area of the top surface, wherein the second fraction is smaller than the first fraction.

SOLAR CELL, PREPARATION METHOD THEREFOR, AND PHOTOVOLTAIC MODULE

The present application provides implementations relating to a solar cell, a preparation method therefor, and a photovoltaic module, and relates to the field of photovoltaic technologies. In an implementation, a solar cell includes a silicon substrate, a front-side passivation anti-reflection layer located on a light-facing side of the silicon substrate, and a back-side passivation anti-reflection layer located on a back side of the silicon substrate. The silicon substrate includes a light-facing surface and a back surface. The light-facing surface of the silicon substrate includes a first textured structure, and at least a part of regions of the back surface of the silicon substrate includes a second textured structure. Apex angles of the second textured structure are greater than apex angles of the first textured structure.

SOLAR CELL AND PREPARATION METHOD THEREFOR
20250351615 · 2025-11-13 ·

In one aspect, a preparation method for a solar cell includes the following steps: sequentially forming a first silicon oxide layer, an intrinsic amorphous silicon layer, a phosphorosilicate glass layer and a second silicon oxide layer on the back surface of an n-type silicon substrate; removing the phosphorosilicate glass layer and the second silicon oxide layer in a partial region of the back surface of the n-type silicon substrate; subjecting the back surface of the n-type silicon substrate to boron diffusion; forming an isolation groove at the boundary between the boron-doped polycrystalline silicon layer and the phosphorus-doped polycrystalline silicon layer; and preparing a first electrode connected to the boron-doped polycrystalline silicon layer and a second electrode connected to the phosphorus-doped polycrystalline silicon layer.