H10F77/707

LOW-COST SOLAR CELL METALLIZATION OVER TCO AND METHODS OF THEIR FABRICATION
20170162744 · 2017-06-08 · ·

Methods for fabricating busbar and finger metallization over TCO are disclosed. Rather than using expensive and relatively resistive silver paste, a high conductivity and relatively low cost copper is used. Methods for enabling the use of copper as busbar and fingers over a TCO are disclosed, providing good adhesion while preventing migration of the copper into the TCO. Also, provisions are made for easy soldering contacts to the copper busbars.

SOLAR CELL AND METHOD FOR FORMING THE SAME
20250072154 · 2025-02-27 · ·

A method for manufacturing a solar cell, the method comprising providing a substrate, arranging a passivation region on a surface of the substrate and arranging a collector layer on a surface of the passivation region, the step of arranging the passivation region comprises; depositing a first passivation layer on the surface of the substrate using a first gas; and, depositing a second passivation layer onto the surface of the first passivation layer using a second gas; wherein the first and second gases each comprise hydrogen gas and a silicon-based gas, wherein the ratio of hydrogen gas to silicon-based gas of the second gas is up to 2.5, and at least 0.4, times the ratio of hydrogen gas to silicon-based gas of the first gas.

Solar Cell and Method for Manufacturing thereof, Cell Assembly, and Photovoltaic System
20250056899 · 2025-02-13 ·

The disclosure is applicable to the technical field of solar cells and provides a solar cell and a method for manufacturing thereof, a cell assembly, and a photovoltaic system. In the solar cell, a P-type silicon substrate is used as a base layer, a first surface of the P-type silicon substrate is not completely covered with P-type doped layers, and a second surface of the P-type silicon substrate is not completely covered with N-type doped layers. Moreover, on the P-type silicon substrate, the P-type doped layers are locally arranged on a light-facing surface. In addition, the N-type doped layers are locally arranged on a light-sheltered surface, and a total area of all third regions is set to be greater than that of all first regions.

Trench process and structure for backside contact solar cells with polysilicon doped regions
09666735 · 2017-05-30 · ·

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

TRANSPARENT GLASS PANE PROVIDED WITH A SURFACE STRUCTURE

A method of manufacturing a transparent pane, in particular a glass pane, which includes on at least one of its main surfaces a surface structure including an assembly of specified individual motifs in relief, in particular pyramids, cones, or truncated cones, created by embossing or by rolling. A structure is created on the surface of the pane constituted by individual motifs, based on one or more basic motifs but which are distinguished from each other by their depth, their height, and/or the perimeter of their base area, and/or by the position of their peak with respect to their base. With this variation, formation of intensity peaks of the reflected light is prevented and at the same time a high quality of light trapping is obtained by panes suitable, for example, for solar applications.

SOLAR PANEL AND METHOD OF MANUFACTURING SUCH A SOLAR PANEL

A solar panel (1) includes: a plurality of semiconductor substrate based solar cells (2), a transparent front side plate (4), and a rear side plate (6). The transparent front side plate (4) is stacked on top of the rear side plate (6) and the plurality of solar cells (2) are arranged in an array in between the rear side (6) plate and the front side plate (4). Each solar cell (2) has a light receiving surface facing (8) towards the front side plate (4); the solar cells (2) being embedded in an encapsulant layer (10) between the front side plate (4) and the rear side plate (6), wherein the solar panel includes an internal light redirection unit (12; 20) for guiding light received on the solar panel (1) but not captured by the solar cells (2), towards the solar cells (2).

SYNCHRONOUS WIRED-OR ACK STATUS FOR MEMORY WITH VARIABLE WRITE LATENCY
20170147234 · 2017-05-25 ·

A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.

THIN-FILM SEMICONDUCTOR OPTOELECTRONIC DEVICE WITH TEXTURED FRONT AND/OR BACK SURFACE PREPARED FROM ETCHING

An optoelectronic device having a textured layer is described. In an aspect, a method may be used to produce the optoelectronic device, where the method includes epitaxially growing a semiconductor layer of the optoelectronic device on a growth substrate, and exposing the semiconductor layer to an etching process to create at least one textured surface in the semiconductor layer. The textured semiconductor layer can be referred to as a textured layer. The etching process is performed without the use of a template layer, or similar layer, configured as a mask to generate the texturing. The etching process can be done by one or more of a liquid or solution-based chemical etchant, gas etching, laser etching, plasma etching, or ion etching. The method can also include lifting the semiconductor layer of the optoelectronic device from the growth substrate by, for example, the use of an epitaxial lift off (ELO) process.

THREE-DIMENSIONAL OPTICAL DEVICES INCLUDING CAVITY-CONTAINING CORES AND METHODS OF MANUFACTURE
20170149019 · 2017-05-25 ·

An organic light emitting diode device can be formed by imprinting a material layer to form an array of non-planar features selected from protrusions and via cavities. The array of non-planar features can be imprinted by moving the material layer under a rolling press or under a rolling die that transfers a pattern thereupon. A layer stack including a transparent electrode layer, an organic light emitting material layer, and a backside electrode layer is formed over the array of non-planar features such that convex sidewalls of the organic light emitting material layer contact concave sidewalls of the backside electrode layer. The layer stack can be encapsulated with a passivation substrate. Additionally or alternatively, an array of convex lenses can be imprinted on a transparent material layer to decrease total internal reflection of an organic light emitting diode device.

Nanowires formed by employing solder nanodots

A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.