A transition between a printed circuit board and a dielectric layer with controlled impedance and reduced and/or mitigate crosstalk for quantum applications are provided. A quantum device can comprise a microwave quantum circuit on a dielectric substrate and a printed circuit board comprising a via that comprises a transmission line. A wirebond between the transmission line of the printed circuit board and a transmission line of the microwave quantum circuit operatively couples the microwave quantum circuit to the printed circuit board. The via comprises a defined characteristic impedance. The wirebond provides a microwave signal connection between the printed circuit board and the microwave quantum circuit.

Devices, methods, and/or computer-implemented methods that can facilitate formation of a self assembled monolayer on a quantum device are provided. According to an embodiment, a device can comprise a qubit formed on a substrate. The device can further comprise a self assembled monolayer formed on the qubit.

Memory devices and methods are provided. In one aspect, a memory device may comprise a first field element, a second field element, a movable magnetic element, and a first heater. The first field element may be a superconductor. The second field element may be disposed facing the first field element and at a first distance from the first field element. The movable magnetic element may be repelled by the second field element and disposed in a space between the first field element and the second field element. The first heater may be arranged near the first field element. The movable magnetic element may move toward the first field element in response to a first electric current that passes through the first heater.

A solid state cooler device is disclosed that comprises a first normal metal pad, a first aluminum layer and a second aluminum layer disposed on the first normal metal pad and separated from one another by a gap, a first aluminum oxide layer formed on the first aluminum layer, and a second aluminum oxide layer formed on the second aluminum layer, and a first superconductor pad disposed on the first aluminum oxide layer and a second superconductor pad disposed on the second aluminum oxide layer. The device further comprises a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad, wherein hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad.

On a first superconducting layer deposited on a first surface of a substrate, a first component of a resonator is pattered. On a second superconducting layer deposited on a second surface of the substrate, a second component of the resonator is patterned. The first surface and the second surface are disposed relative to each other in a non-co-planar disposition. In the substrate, a recess is created, the recess extending from the first superconducting layer to the second superconducting layer. On an inner surface of the recess, a third superconducting layer is deposited, the third superconducting layer forming a superconducting path between the first superconducting layer and the second superconducting layer. Excess material of the third superconducting layer is removed from the first surface and the second surface, forming a completed through-silicon via (TSV).

A method for adjusting a resonance frequency of a qubit in a quantum mechanical device includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit comprising capacitor pads; and removing substrate material from the backside of the substrate at an area opposite the at least one qubit to alter a capacitance around the at least one qubit so as to adjust a resonance frequency of the at least one qubit.

Techniques regarding qubit devices comprising silicon-based Josephson junctions and/or the manufacturing of qubit devices comprising silicon-based Josephson junctions are provided. For example, one or more embodiments described herein can comprise an apparatus that can include a Josephson junction comprising a tunnel barrier positioned between two vertically stacked superconducting silicon electrodes.

A method of making a Josephson junction in a superconducting qubit includes providing a substrate having a convex structure with a first face and a second face meeting at an edge; depositing a first layer of superconducting material on the first face; oxidizing the first layer to form a layer of oxide material on a surface of the first layer; and depositing a second layer of the superconducting material on the second face. A portion of the second layer is in contact with a portion of the layer of oxide material at or in the vicinity of the edge such that the portion of the layer of oxide material is sandwiched between a portion of the first layer and the portion of the second layer to define a Josephson junction at or in the vicinity of the edge.

A quantum-mechanical photon-pair generator includes first, second, third, and fourth Josephson junctions electrically connected in a bridge circuit having first, second and third resonance eigenmodes, and a source of magnetic flux configured to provide, during operation, a magnetic flux through the bridge circuit to cause coupling between the first, second and third resonance eigenmodes when the third resonance eigenmode is excited. The photon-pair generator further includes first, second and third electromagnetic resonators having eigenmodes in resonance with the first, second and third resonance eigenmodes of the bridge circuit, respectively. The third frequency of the third resonance eigenmode is equal to a sum of a first frequency of the first resonance eigenmode plus a second frequency of the second resonance eigenmode such that, during operation, a photon having the third frequency is split into two quantum-mechanically entangled photons having the first and second frequencies, respectively.

Various implementations described herein are related to a device having multiple conductive terminals formed with a superconductive material. The device may include at least one switching layer formed with correlated-electron material (CEM) that is disposed between the multiple conductive terminals. The CEM may comprise carbon or a carbon based compound. The device may refer to a switch structure or similar.