A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.

Fabricating optical devices can include mounting a plurality of singulated lens systems over a substrate, adjusting a thickness of the substrate below at least some of the lens systems to provide respective focal length corrections for the lens systems, and subsequently separating the substrate into a plurality of optical modules, each of which includes one of the lens systems mounted over a portion of the substrate. Adjusting a thickness of the substrate can include, for example, micro-machining the substrate to form respective holes below at least some of the lens systems or adding one or more layers below at least some of the lens systems so as to correct for variations in the focal lengths of the lens systems.

An optical apparatus includes a substrate 1, a wiring pattern 8 formed on the substrate 1, a light-receiving element 3 and a light-emitting element 2 provided on the substrate 1 and spaced apart from each other in a direction x, a light-transmitting resin 4 covering the light-receiving element 3, a light-transmitting resin 5 covering the light-emitting element 2, and a light-shielding resin 6 covering the light-transmitting resin 4 and the light-transmitting resin 5. The wiring pattern 8 includes a first light-blocking portion 83 interposed between the light-shielding resin 6 and the substrate 1 and positioned between the light-receiving element 3 and the light-emitting element 2 as viewed in x-y plane. The first light-blocking portion 83 extends across the light-emitting element 2 as viewed in the direction x.

A display panel including a circuit substrate, a plurality of light-emitting elements, a plurality of microlenses, and a plurality of dummy microlenses is provided. The circuit substrate is provided with a plurality of pixel areas. Each of the pixel areas is provided with the light-emitting elements. The plurality of microlenses are disposed on the circuit substrate and respectively overlapped with the light-emitting elements. The plurality of dummy microlenses are disposed between the microlenses and not overlapped with the light-emitting elements.

Various optoelectronic modules are described and include one or more optoelectronic devices. Each optoelectronic module includes one or more optoelectronic devices. Sidewalls laterally surround each optoelectronic device and can be in direct contact with sides of the optoelectronic device or, in some cases, with an overmold surrounding the optoelectronic device. The sidewalls can be composed, for example, of a vacuum injected material that is non-transparent to light emitted by or detectable by the optoelectronic device. The module also includes a passive optical element. Depending on the implementation, the passive optical element can be on a cover for the module, directly on a top surface of the optoelectronic device, or on an overmold surrounding the optoelectronic device. Methods of fabricating such modules are described as well, and can facilitate manufacturing the modules using wafer-level processes.

Method of encapsulating a semiconductor structure comprising providing a semiconductor structure comprising an opto-electric element located in a cavity formed between a substrate and a cap layer, the cap layer being made of a material transparent to light, and having a flat upper surface; forming at least one protrusion on the cap layer; bringing the at least one protrusion of the cap layer in contact with a tool having a flat surface region, and applying a opaque material to the semiconductor structure where it is not in contact with the tool; and removing the tool thereby providing an encapsulated optical semiconductor device having a transparent window integrally formed with the cap layer.

A window structure includes a window, a design layer structure on the window, a light shield layer on the design layer structure, and a light absorption layer. The design layer structure includes a first hole exposing a portion of the window. The light shield layer includes a second hole in fluid communication with the first hole. The light absorption layer covers at least a portion of the design layer structure exposed by the first and second holes, and includes a third hole exposing a portion of the window. By including the light absorption layer of a gray or black color to cover exposed portions of the design layer structure, a vignette about an image caused by the design layer structure is prevented.

A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.

A semiconductor device used for fluorescent-based molecule detection and a method for manufacturing the same are provided. The semiconductor device has a fluid channel layer defining a fluid channel through which a sample stream flows. A target cell coupled with a fluorescent source is contained by the sample stream. The semiconductor device also has an excitation light source for generating excitation light that reaches the target cell coupled with the fluorescent source to generate fluorescent light. The semiconductor device also has a light filter layer for permitting the fluorescent light to pass through and to block the excitation light and a light detection layer for detecting the fluorescent light. The functional components of the device are highly integrated. Leakage of the excitation light and background noise into the light detection component can be minimized to improve the quality of detection.

Embodiments of the invention provide a system for protecting an integrated circuit (IC) device from attacks, the IC device (100) comprising a substrate (102) having a front surface (20) and a back surface (21), the IC device further comprising a front side part (101) arranged on the front surface of the substrate (102) and stacked layers, at least one of said layers comprising a data layer comprising wire carrying data, the front side part having a front surface (13). The system comprises an internal shield (12) arranged in a layer located below said data layer and a verification circuit configured to check the integrity of at least one portion of the internal shield.