The present technology relates to a semiconductor device and electronic equipment in which a semiconductor device that suppresses the occurrence of noise by a leakage of light can be provided. A semiconductor device is configured which includes a light-receiving element 34, an active element for signal processing, and a light shielding structure 40 which is between the light-receiving element 34 and the active element to cover the active element and is formed of wirings 45 and 46. The semiconductor device further includes a first substrate on which the light-receiving element is formed, a second substrate on which the active element is formed, and a wiring layer which has a light shielding structure by the wirings which is formed on the second substrate, and in which the second substrate can be bonded to the first substrate through the wiring layer.

The invention relates to a UV light sensor produced in a CMOS method, comprising a substrate that has a surface, one or more sensor elements that detect radiation and are designed in said substrate, at least one passivation layer arranged over said substrate surface, and a functional layer that is arranged over said passivation layer and designed in the form of at least one filter. The problem addressed by the invention of providing a UV light sensor which is sensitive exclusively within the UV wavelength range is solved, in terms of arrangement, by means of filters designed directly on a planar passivation layer, and stray light suppressing means around said at least one sensor element and/or around the UV light sensor. In terms of the method, the problem is solved by measuring two output signal from at least two photo diodes fitted with different filters, and by determining a mathematical relationship between the two output signals.

A 2-D sensor array includes a semiconductor substrate and a plurality of pixels disposed on the semiconductor substrate. Each pixel includes a coupling region and a junction region, and a slab waveguide structure disposed on the semiconductor substrate and extending from the coupling region to the region. The slab waveguide includes a confinement layer disposed between a first cladding layer and a second cladding layer. The first cladding and the second cladding each have a refractive index that is lower than a refractive index of the confinement layer. Each pixel also includes a coupling structure disposed in the coupling region and within the slab waveguide. The coupling structure includes two materials having different indices of refraction arranged as a grating defined by a grating period. The junction region comprises a p-n junction in communication with electrical contacts for biasing and collection of carriers resulting from absorption of incident radiation.

Method of encapsulating a semiconductor structure comprising providing a semiconductor structure comprising an opto-electric element located in a cavity formed between a substrate and a cap layer, the cap layer being made of a material transparent to light, and having a flat upper surface; forming at least one protrusion on the cap layer; bringing the at least one protrusion of the cap layer in contact with a tool having a flat surface region, and applying a opaque material to the semiconductor structure where it is not in contact with the tool; and removing the tool thereby providing an encapsulated optical semiconductor device having a transparent window integrally formed with the cap layer.

A method for forming an image sensor device is provided. The method includes forming a photodetector in a semiconductor substrate and forming a shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the shielding layer and partially removing the dielectric layer to form a recess. The method further includes partially removing the shielding layer through the recess. In addition, the method includes forming a filter in the recess after the shielding layer is partially removed.

The present invention provides a package structure of an optical apparatus which includes a substrate, a light emitting device, a light sensing device, and a light barrier member. The light emitting device is disposed on the substrate and electrically connected to the substrate. The light emitting device is for emitting light. The light sensing device is disposed on the substrate and is a chip scale package (CSP) device. The light sensing device is for receiving light reflected by an object. The light barrier member is disposed around a periphery of the light sensing device.

A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.

The present invention provides a package structure of an optical apparatus which includes a substrate, a light emitting device, a light sensing device, and a light barrier member. The light emitting device is disposed on the substrate and electrically connected to the substrate. The light emitting device is for emitting light. The light sensing device is disposed on the substrate and is a chip scale package (CSP) device. The light sensing device is for receiving light reflected by an object. The light barrier member is disposed around a periphery of the light sensing device.

The present invention is to provide a light screening composition that allow forming of a light screening film having excellent adhesiveness to a substrate and excellent residue removability at the time of development. The light screening composition according to the invention contains (A) any one of light screening particles and a light screening dye; (B) a dispersing resin; (C) a binder polymer having an acid value of 50 mg KOH/g or less and a weight-average molecular weight of 8,000 to 50,000; and (D) a polymerizable compound.

Fabricating optical devices can include mounting a plurality of singulated lens systems over a substrate, adjusting a thickness of the substrate below at least some of the lens systems to provide respective focal length corrections for the lens systems, and subsequently separating the substrate into a plurality of optical modules, each of which includes one of the lens systems mounted over a portion of the substrate. Adjusting a thickness of the substrate can include, for example, micro-machining the substrate to form respective holes below at least some of the lens systems or adding one or more layers below at least some of the lens systems so as to correct for variations in the focal lengths of the lens systems.