An apparatus for detecting electromagnetic radiation within a target frequency range is provided. The apparatus includes a substrate and one or more resonator structures disposed on the substrate. The substrate can be a dielectric or semiconductor material. Each of the one or more resonator structures has at least one dimension that is less than the wavelength of target electromagnetic radiation within the target frequency range, and each of the resonator structures includes at least two conductive structures separated by a spacing. Charge carriers are induced in the substrate near the spacing when the resonator structures are exposed to the target electromagnetic radiation. A measure of the change in conductivity of the substrate due to the induced charge carriers provides an indication of the presence of the target electromagnetic radiation.

The disclosure provides a photo-detection device for use in long-wave infrared detection and a method of fabrication. The device comprises a GaSb substrate, a photo absorbing layer comprising InAs/InAsSb superlattice type-II, a barrier layer comprising AlAsSb, and a contact layer comprising InAs/InAsSb superlattice type-II. The barrier layer is configured to allow minority carrier holes current flow while blocking majority carrier electrons current flow between the photo-absorbing and contact layers. The disclosure further provides a method of producing the photo-detector using photolithography which includes selective etching of the contact layer that stops on the top of the barrier so no etching is made to the barrier layer so the barrier may operate as a passivator too. The disclosure presents an x-ray and photoluminescence results for InAs/InAsSb superlattice type-II material. Also present a measurement of a single element, Long-Wave photo-detector, showing very low dark current and very high Quantum efficiency, as predicted.

An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

A photo-sensing unit including a first electrode, a first insulation layer, a photo-sensing structure and a second electrode is provided. The first insulation layer covers the first electrode and has an opening exposing the first electrode. The photo-sensing structure is located on the first electrode and disposed in the opening of the first insulation layer. The photo-sensing structure includes a first photo-sensing layer and a second photo-sensing layer stacked with each other. A material of the first photo-sensing layer is Si.sub.xGe.sub.yO.sub.z. A material of the second photo-sensing layer is Si.sub.vO.sub.w. The second electrode covers the photo-sensing structure. A photo-sensing apparatus including the photo-sensing unit and a fabricating method of a photo-sensing unit are also provided.

A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.

A system to dynamically configure a conductive pathway and a method of forming a dynamically configurable conductive pathway are described. The system includes a substrate to mechanically support a circuit, and a photosensitive layer disposed on at least a portion of at least one side of the substrate. The system also includes a light source to controllably define the conductive pathway in the photosensitive layer based on photoexcitation of an area of the photosensitive layer corresponding with the conductive pathway, a change in the area photoexcited by the light source facilitating a change in the conductive pathway.

An electro-optical device can include a plurality of nanocrystals positioned between a first electrode and a second electrode.

An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

An infrared-sensor filter member includes an optical filter disposed in an opening portion of a second member and a first member. The infrared-sensor filter member includes a recess portion formed from a light-incident surface of the optical filter and the first member. At least a part of a bottom surface of the recess portion is formed by the light-incident surface and side walls of the recess portion, which are formed by the first member.

Photodetectors, methods of fabricating the same, and methods using the same to detect radiation are described. A photodetector can include a first electrode, a light sensitizing layer, an electron blocking/tunnelling layer, and a second electrode. Infrared-to-visible upconversion devices, methods of fabricating the same, and methods using the same to detect radiation are also described. An Infrared-to-visible upconversion device can include a photodetector and an OLDE coupled to the photodetector.