The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semiconductor and/or metallo-dielectric material structures for use in semiconductor devices, and more particularly for use in III-nitride based semiconductor devices. In some embodiments, the present invention includes materials, structures, and methods for improving the crystal quality of epitaxial materials grown on non-native substrates. In some embodiments, the present invention provides materials, structures, devices, and methods for acoustic wave devices and technology, including epitaxial and non-epitaxial piezoelectric materials and structures useful for acoustic wave devices. In some embodiments, the present invention provides metal-base transistor devices, structures, materials and methods of forming metal-base transistor material structures for use in semiconductor devices.

Methods are provided for controlling the shape of antimony selenide (Sb.sub.2Se.sub.3) synthesized nanostructures. The method dissolves an antimony (III) salt in a first amount of carboxylic acid, forming an antimony precursor. In one aspect, antimony (III) chloride is dissolved in oleic acid. Separately, selenourea is dissolved in oleylamine, forming a selenium precursor. The antimony precursor is combined with the selenium precursor to form a first solution and cause a reaction. The reaction is quenched with a solvent having a low boiling point. In response to quenching the reaction in the first solution, antimony selenide nanorods are formed, having a length in the range of 150-200 nanometers (nm) and a diameter in the range of 20 to 30 nm. Related methods can be used to create, shorter nanorods, nanocrystals, and hollow nanospheres.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, the optoelectronic device includes a first optoelectronic material that is inhomogeneously strained. A first charge carrier collector and a second charge carrier collector are each in electrical communication with the first optoelectronic material and are adapted to collect charge carriers from the first optoelectronic material. In another embodiment, a method of photocatalyzing a reaction includes using a strained optoelectronic material.

In one aspect, optoelectronic devices are described herein. In some implementations, an optoelectronic device comprises a photovoltaic cell. The photovoltaic cell comprises a space-charge region, a quasi-neutral region, and a low bandgap absorber region (LBAR) layer or an improved transport (IT) layer at least partially positioned in the quasi-neutral region of the cell.

The present disclosure advances the art by providing a method and system for forming electronic devices. In particular, and by example only, methods are described for forming devices for harvesting energy in the terahertz frequency range on flexible substrates, wherein the methods provide favorable accuracy in registration of the various device elements and facilitate low-cost R2R manufacturing.

A liquid crystal display device containing a liquid crystal panel that includes a first substrate, a second substrate, and first and second polarizers at respective outer surfaces of the first and second substrates; and a backlight unit under the liquid crystal panel that includes a light source, wherein the light source includes a first luminous body having a first peak wavelength, a second luminous body having a second peak wavelength greater than the first peak wavelength, and a third luminous body having a third peak wavelength greater than the second peak wavelength, and wherein the first polarizer contains a light absorption layer having an absorption peak between the second peak wavelength and the third peak wavelength.

Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes a thin-film solar cell and a bottom cell stacked in a first direction. The bottom cell has a stacked structure in the first direction including: a transparent conductive layer, a first doped conductive layer, an intrinsic amorphous silicon layer, a substrate, a selective passivation layer, and one or more electrodes. The selective passivation layer covers a portion of a surface of the substrate away from the intrinsic amorphous silicon layer and includes a plurality of passivation contact structures arranged at intervals in a second direction. Each passivation contact structure includes a tunneling layer and a second doped conductive layer stacked in the first direction. The electrodes are formed on a surface of the selective passivation layer away from the substrate and are in ohmic contact with second doped conductive layers.

An optical device includes a nanostructure body which induces surface plasmon resonance when irradiated with light, an alloy layer which is in contact with the nanostructure body and which has a lower work function than the nanostructure body, and an n-type semiconductor which is in Schottky contact with the alloy layer. The nanostructure body is composed of one selected from the group consisting of elemental metals, alloys, metal nitrides, and conductive oxides. The alloy layer is composed of at least two metals.

A population of bright and stable nanocrystals is provided. The nanocrystals include a semiconductor core and a thick semiconductor shell and can exhibit high extinction coefficients, high quantum yields, and limited or no detectable blinking.