Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

The present disclosure provides a semiconductor device including: a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having an n-type conduction, provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a contact electrode connected to the intermediate semiconductor layer; and a circuit element formed in the second semiconductor layer.

Methods, systems, and apparatus, including a photonic integrated circuit package, including a photonic integrated circuit chip, including multiple electrodes configured to receive the electrical signal, where at least one characteristics of a segment of the traveling wave active optical element is changed based on the electrical signal received by a corresponding electrode of the multiple electrodes; a ground electrode; and multiple bond contacts; and an interposer bonded to at least a portion of the photonic integrated circuit chip, the interposer including a conductive trace formed on a surface of the interposer, the conductive trace electrically coupled to a source of the electrical signal; a ground trace; and multiple conductive vias electrically coupled to the conductive trace, where each conductive via of the multiple conductive vias is bonded with a respective bond contact of the multiple bond contacts of the photonic integrated circuit chip.

Methods, systems, and apparatus, including a photonic integrated circuit package, including a photonic integrated circuit chip, including a lumped active optical element; an electrode configured to receive an electrical signal, where at least one characteristics of the lumped active optical element is changed based on the electrical signal received by the electrode; a ground electrode; and a bond contact electrically coupled to the electrode; and an interposer bonded to at least a portion of the photonic integrated circuit chip, the interposer including a conductive trace formed on a surface of the interposer, the conductive trace electrically coupled to a source of the electrical signal; a ground trace; and a conductive via bonded with the bond contact of the photonic integrated circuit chip, the conductive via electrically coupled to the conductive trace to provide the electrical signal to the electrode of the photonic integrated circuit chip.

Methods, systems, and apparatus, including a photonic integrated circuit package, including a photonic integrated circuit chip, including an active optical element; an electrode configured to receive an electrical signal; a ground electrode; and a bond contact electrically coupled to the electrode; and an ASIC chip including circuitry configured to provide the electrical signal; and a bond contact that is electrically coupled to the circuitry; an bridge chip bonded to at least a portion of the photonic integrated circuit chip and at least a portion of the ASIC chip.

An optical coupling device includes a primary conductive plate, a light-emitting part, a secondary conductive plate, a light-receiving part, and a first conductive part. The light-emitting part is located on the primary conductive plate, converts an electrical signal to light, and emits the light. The secondary conductive plate is spaced apart from the primary conductive plate, and faces the light-emitting part. The light-receiving part is disposed on the secondary conductive plate to face the light-emitting part, and converts light from the light-emitting part to an electrical signal. The first conductive part is disposed at a side facing the light-emitting part, and has a point on which an electric field generated by a potential difference between the primary conductive plate and the secondary conductive plate is concentrated.

A semiconductor optical device includes a semiconductor substrate having first to fourth regions, a 90-degree optical hybrid provided in the third region on a principal surface of the semiconductor substrate, first and second waveguides provided in the first region and being optically coupled to the 90-degree optical hybrid, a photodiode provided in the fourth region, a third waveguide provided in the second region to optically couple the 90-degree optical hybrid to the photodiode, and a metal layer provided on a back surface of the semiconductor substrate. The metal layer includes a first part provided in the first region and a second part provided in the second region that is spaced apart from the first part by a distance. The 90-degree optical hybrid has a first length. The distance between the first and second parts is more than or equal to the first length.

An integration method of fabricating optical sensor device and thin film transistor device includes the follow steps. A substrate is provided, and a gate electrode and a bottom electrode are formed on the substrate. A first insulating layer is formed on the gate electrode and the bottom electrode, and the first insulating layer at least partially exposes the bottom electrode. An optical sensing pattern is formed on the bottom electrode. A patterned transparent semiconductor layer is formed on the first insulating layer, wherein the patterned transparent semiconductor layer includes a first transparent semiconductor pattern covering the gate electrode, and a second transparent semiconductor pattern covering the optical sensing pattern. A source electrode and a drain electrode are formed on the first transparent semiconductor pattern. A modification process including introducing at least one gas is performed on the second transparent semiconductor pattern to transfer the second transparent semiconductor pattern into a conductive transparent top electrode.

A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.

According to a photodetector includes a first light detection layer and a reflective layer. The first light detection layer has a first surface and a second surface on a side opposite to the first surface. The first light detection layer includes a first light detection area including a p-n junction of a p-type semiconductor layer containing Si and an n-type semiconductor layer containing Si. The reflective layer arranged on a second surface side of the first light detection layer so as to be opposed to the first light detection area. The reflective layer reflects at least part of light in a near-infrared range.