A semiconductor optical device includes a semiconductor substrate having first to fourth regions, a 90-degree optical hybrid provided in the third region on a principal surface of the semiconductor substrate, first and second waveguides provided in the first region being optically coupled to the 90-degree optical hybrid, a photodiode provided in the fourth region, a third waveguide provided in the second region to optically couple the 90-degree optical hybrid to the photodiode, and a metal layer provided on a back surface of the semiconductor substrate. The metal layer includes a first part provided in the first region and a second part provided in the second region spaced apart from the first region by a distance. The 90-degree optical hybrid has a first length. The distance between the first and second parts is more than or equal to the first length.

An optical element package includes: an eyelet including an upper surface and a lower surface opposite to the upper surface; a heat releasing part disposed on the upper surface of the eyelet; a through hole formed through the eyelet to extend from the upper surface of the eyelet to the lower surface of the eyelet; a lead sealed by a certain member provided in the through hole and including a lead portion extending from the lower surface of the eyelet and a lead wiring portion extending from the upper surface of the eyelet; and an insulating substrate disposed between the lead wiring portion and the heat releasing part and comprising a front surface and a back surface opposite to the front surface.

What is specified is: an optoelectronic semiconductor component (1) comprising a carrier (5) and a semiconductor body (2), wherein the semiconductor body is fastened on the carrier and has a semiconductor layer sequence having an active region (20) provided for generating and/or receiving radiation, a first semiconductor layer (21) and a second semiconductor layer (22). The active region is arranged between the first semiconductor layer and the second semiconductor layer. The carrier is electrically conductive and is divided into a first carrier body (51) and a second carrier body (52), wherein the first carrier body and the second carrier body are electrically insulated from one another. The first carrier body has a first external contact (61) of the semiconductor component on the side remote from the semiconductor body, wherein the first contact is electrically conductively connected to the first semiconductor layer via the first carrier body. The second carrier body has a second external contact (62) of the semiconductor component on the side remote from the semiconductor body, wherein the second contact is electrically conductively connected to the second semiconductor layer via the second carrier body. The invention furthermore relates to a method for producing semiconductor components.

A method for fabricating an electronic device includes fixing a rear face of an integrated-circuit chip to a front face of a support wafer. An infused adhesive is applied in the form of drops or segments that are separated from each other. A protective wafer is applied to the infused adhesive, and the infused adhesive is cured. The infused adhesive includes a curable adhesive and solid spacer elements infused in the curable adhesive. A closed intermediate peripheral ring is deposited on the integrated-circuit chip outside the cured infused adhesive, and an encapsulation block is formed such that it surrounds the chip, the protective wafer and the closed intermediate peripheral ring.

The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

The present invention applies to the technical field of photoelectric detectors and provides a high-frequency photoelectric detector encapsulation base can-packaged by using a multi-layer ceramic, comprising a laminated multi-layer ceramic substrate, wherein the multi-layer ceramic substrate is welded with pins at a bottom and provided with a metal ring at a top; an upper surface and a lower surface of each layer of the ceramic substrate are both plated with a conductive metal layer; circuit connection holes are distributed in each layer of the ceramic substrate; the upper surface of the multi-layer ceramic substrate is provided with two power contacts and two differential signal contacts; and the power contacts and the differential signal contacts penetrate through each layer of the ceramic substrate to be connected to the corresponding pins. The photoelectric detector encapsulation base is a tank-type base of a multi-layer ceramic structure, the upper and lower surfaces of each layer of the ceramic substrate are electroplated with a conductive metal layer to constitute a co-plane waveguide structure; and a differential signal transmission design being adopted in a high-speed signal line can solve the transmission problem of a signal of higher than 20 GHz in bandwidth, with a small transmission loss.

Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

A semiconductor structure includes an optoelectronic device located in one region of a substrate. A dielectric material is located adjacent and atop the optoelectronic device. A top contact is located within a region of the dielectric material and contacting a topmost surface of the optoelectronic device. A bottom metal contact is located beneath the optoelectronic device and lining a pair of openings located with other regions of the dielectric material, wherein a portion of the bottom metal contact contacts an entire bottommost surface of the optoelectronic device.

A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.