A light-emitting diode and a manufacturing method therefor. A light-emitting layer is used as the last layer of a deposited material, so that the corrosion to the light-emitting layer is avoided in the process of preparing other structures on the light-emitting layer, and the stability of the light-emitting layer is improved. Moreover, there is no functional material on the surface of the light-emitting layer to shield emitted light, a contact area of the light-emitting layer and a second electrode layer is not reduced, and a light-emitting rate of the light-emitting layer and the light-emitting efficiency of the light-emitting diode are ensured.

A display substrate, including repetitive units; where each repetitive unit includes first, second and third light-emitting element and photoelectric conversion elements; the first and third light-emitting elements are of a same number; the second light-emitting elements and the photoelectric conversion elements are of a same number; second light-emitting elements are twice as many as the first light-emitting element; the first, second and third light-emitting elements are sequentially arranged along first direction; the second light-emitting elements and the photoelectric conversion elements are sequentially arranged along second direction, respectively; an angle between the first and second direction is >0 and 90; the photoelectric conversion elements and the second light-emitting elements are adjacently arranged and distributed in one-to-one correspondence; any set of corresponding second light-emitting element and photoelectric conversion element are arranged along the first direction; the first or third light-emitting element is located between two adjacent photoelectric conversion elements.

Multiple colors of light emitted by an assembled light emitting diode (LED) based illumination device is automatically tuned to within a predefined tolerance of multiple target color points by modifying portions of wavelength converting materials associated with each color. A first color of light emitted from the assembled LED based illumination device in response to a first current is measured and a second color of light emitted from the assembled LED based illumination device in response to a second current is measured. A material modification plan to modify wavelength converting materials is determined based at least in part on the measured colors of light and desired colors of light to be emitted. The wavelength converting materials may be selectively modified in accordance with the material modification plan so that the assembled LED based illumination device emits colors of light that are within a predetermined tolerance of target color points.

A luminescence conversion element for wavelength conversion of primary electromagnetic radiation into secondary electromagnetic radiation includes first luminescent material particles that, when excited by the primary electromagnetic radiation, emit a first electromagnetic radiation, a peak wavelength of which is at least 515 nm to at most 550 nm of a green region of the electromagnetic spectrum; second luminescent material particles that, when excited by the primary electromagnetic radiation, emit a second electromagnetic radiation, a peak wavelength of which is at least 595 nm to at most 612 nm of a yellow-red region of the electromagnetic spectrum; and third luminescent material particles that, when excited by the primary electromagnetic radiation, emit a third electromagnetic radiation, a peak wavelength of which is at least 625 nm to at most 660 nm of a red region of the electromagnetic spectrum.

In one embodiment, a light-emitting device having a reflector cup, a light source die, a wavelength-converting layer, an optical structure, and an encapsulant is disclosed. The wavelength-converting layer may be configured to convert a narrow band light emitted from the light source die into a broad band light before the light is directed towards a first direction. The optical element may be an air ring embedded within the encapsulant and may be arranged circumscribing the wavelength-converting layer. In another embodiment, a light-emitting device with extended wavelength-converting layer in place of the air ring is presented.

A light emitting element includes a semiconductor layer; an upper electrode disposed on an upper surface of the semiconductor layer; and a lower electrode disposed on a lower surface of the semiconductor later. In a plan view, the upper electrode includes a first extending portion extending in an approximately rectangular shape along an outer periphery of the semiconductor layer, a first pad portion connected to a first side among four sides of the first extending portion, a second pad portion connected to a second side that is opposite to the first side, among the four sides of the first extending portion, and a second extending portion and a third extending portion, each disposed in a region surrounded by the first extending portion, the second extending portion and the third extending portion each connecting the first pad portion and the second pad portion.

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.

A method (100) is provided for forming resonant cavity light emitting elements. The method comprises a step (101) of forming a first structure comprising a first substrate, a stop layer, a light emitting epitaxial structure, a conductive oxide layer, and second a substrate dielectrically bonded to the conductive oxide layer. The method further comprises a step (102) of etching from the first substrate up to the stop layer. Additionally, the method comprises a step (103) of forming a plurality of light emitting mesa modules, each having a metal layer deposited on the stop layer. Furthermore, the method comprises a step (104) of hybrid bonding the first structure to a carrier substrate to form a second structure. Furthermore, the method comprises a step (105) of etching from the second substrate up to the conductive oxide layer. Moreover, the method comprises a step (106) of depositing a distributed Bragg reflector on top of the conductive oxide layer, thereby forming the resonant cavity light emitting elements.

A light-emitting device includes: a package defining a recess; a light-emitting element disposed on a bottom surface of the recess; and a sealing member disposed in the recess so as to cover the light-emitting element. The sealing member includes a filler-containing layer which contains a filler and covers the light-emitting element, and a light-transmissive layer disposed on the filler-containing layer. The recess is further defined by a lateral surface having a stepped portion between the bottom surface of the recess and an opening of the recess. The light-transmissive layer covers the stepped portion. An upper surface of the light-transmissive layer is downwardly recessed.

An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular LEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.