A display panel and a method for fabricating the display panel are proposed. The method includes steps of forming an amorphous silicon (a-Si) film on a substrate, the a-Si film comprising at least two a-Si layers, and densities of dice of the two adjacent a-Si layers being different; and transforming the a-Si film into a polycrystalline silicon film. The poly-silicon layer have less grain boundaries and larger dice, thereby increasing carrier mobility of the poly-silicon film and correspondingly improving the performance of the display panel.

The present invention provides a method for manufacturing an LTPS TFT substrate structure and a structure of an LTPS TFT substrate. The method for manufacturing the LTPS TFT substrate structure according to the present invention provides patterns of a thermally conductive electrical-insulation layer that are of the same size and regularly distributed under a buffer layer of a driving TFT area to absorb heat in a subsequent excimer laser annealing process so as to speed up the cooling rate of amorphous silicon to form crystal nuclei that gradually grow up in the annealing process. Since the thermally conductive electrical-insulation layer is made up of regularly distributed and size-consistent patterns, crystal grains of a polycrystalline silicon layer located in the driving TFT area show improved consistency and homogeneity and the grain sizes are relatively large to ensure the consistency of electrical property of the driving TFT. The structure of the LTPS TFT substrate structure according to the present invention includes patterns of a thermally conductive electrical-insulation layer that are regularly distributed under a buffer layer of a driving TFT area and have the same size, so that crystal grains of a polycrystalline silicon layer located in the driving TFT area show improved consistency and homogeneity and the grain sizes are relatively large and thus, the electrical property of the driving TFT is consistent.

A display device according to the present disclosure includes: a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate. A gate electrode of the thin film transistor with the top gate structure is provided in a same layer as a wire layer. A method of manufacturing a display device according to the present disclosure, the display device including a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate, includes: forming a gate electrode of the thin film transistor with the top gate structure in a same layer as a wire layer.

The present invention provides a method for manufacturing an AMOLED backplane and a structure thereof. The method uses a solid phase crystallization process to crystallize and convert amorphous silicon into poly-silicon so as to prevent the issue of mura on a display device caused by excimer laser annealing and adopts a back channel etching structure to effectively reduce the number of masks used. The method for manufacturing the AMOLED backplane according to the present invention needs only seven masking operations and, compared to the prior art, saves two masking operations, thereby simplifying the manufacturing process, improving the manufacturing efficiency, and saving costs.

A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 m to about 2 m, and a length of the channel of the third transistor is in a range of about 1 m to about 2.5 m.

It is an object of the present invention to provide a method for preventing a breaking and poor contact, without increasing the number of steps, thereby forming an integrated circuit with high driving performance and reliability. The present invention applies a photo mask or a reticle each of which is provided with a diffraction grating pattern or with an auxiliary pattern formed of a semi-translucent film having a light intensity reducing function to a photolithography step for forming wires in an overlapping portion of wires. And a conductive film to serve as a lower wire of a two-layer structure is formed, and then, a resist pattern is formed so that a first layer of the lower wire and a second layer narrower than the first layer are formed for relieving a steep step.

A polishing slurry for silicon, a method of polishing polysilicon, and a method of manufacturing a thin film transistor substrate, the slurry including a polishing particle; a dispersing agent including an anionic polymer, a hydroxyl acid, or an amino acid; a stabilizing agent including an organic acid, the organic acid including a carboxyl group; a hydrophilic agent including a hydrophilic group and a hydrophobic group, and water, wherein the polishing particle is included in the polishing slurry in an amount of about 0.1% by weight to about 10% by weight, based on a total weight of the slurry, a weight ratio of the polishing particle and the dispersing agent is about 1:0.01 to about 1:0.2, a weight ratio of the polishing particle and the stabilizing agent is about 1:0.001 to about 1:0.1, and a weight ratio of the polishing particle and the hydrophilic agent is about 1:0.01 to about 1:3.

The present invention provides a method for manufacturing an AMOLED backplane and a structure thereof. The method uses a solid phase crystallization process to crystallize and convert amorphous silicon into poly-silicon so as to prevent the issue of mura on a display device caused by excimer laser annealing and adopts a back channel etching structure to effectively reduce the number of masks used. The method for manufacturing the AMOLED backplane according to the present invention needs only seven masking operations and, compared to the prior art, saves two masking operations, thereby simplifying the manufacturing process, improving the manufacturing efficiency, and saving costs.

The present invention provides an array substrate and a manufacturing method thereof, a display panel and a display device. The manufacturing method of an array substrate in the present invention comprises: forming light-shielding layers on the base substrate through a patterning process by using a light-shielding layer-doping multiplexing mask plate; and performing doping of CMOS transistors by using the light-shielding layer-doping multiplexing mask plate. In the invention, two mask plates used in manufacturing the light-shielding layer and the doping process in the prior art are replaced with one light-shielding layer-doping multiplexing mask plate, therefore the number of the mask plates during manufacturing is reduced and the cost is decreased. Meanwhile, providing of the light-shielding layer below the N type transistors in the driving region of the array substrate may prevent light-induced leakage current from being generated in the conductive region.

A preparation method of a poly-silicon thin film transistor (TFT) array substrate and an array substrate thereof are provided. The preparation method includes: forming a photoresist layer on a poly-silicon layer, and exposing and developing the photoresist layer with a gray tone mask to form patterns of a photoresist completely-reserved region, a photoresist partially-reserved regions and a photoresist completely-removed region; removing part of the poly-silicon layer located in the photoresist completely-removed region, to form patterns of active layers; ashing the photoresist so as to expose part of the active layer located in the photoresist partially-reserved regions and inject P+ ions of high concentration into the part of the active layer, to form doping regions of patterns of source-drain electrodes of a P-type TFT; and stripping off remaining photoresist.