An image sensor including: a pixel array including a plurality of pixels connected to a plurality of row lines and a plurality of column lines, each of the plurality of pixels including a photodiode for generating an electric charge in response to light, and a pixel circuit having a floating diffusion for storing the electric charge; and a controller configured to adjust a capacitance of the floating diffusion to a first value and obtain a first pixel signal from the pixel circuit during a first time period, adjust the capacitance of the floating diffusion to a second value greater than the first value and obtain a second pixel signal from the pixel circuit during a second time period subsequent to the first time period, and generate a result image using the first pixel signal and the second pixel signal.

An imaging device is used that has: a substrate; a first electrode layer disposed on the substrate, and having a first electrode; a first photoelectric conversion film disposed on the first electrode layer; a pixel electrode layer disposed on the first photoelectric conversion film, and having a pixel electrode; a second photoelectric conversion film disposed on the pixel electrode layer; and a second electrode layer disposed on the second photoelectric conversion film, and having a second electrode, wherein at least part of a period from among a first accumulation period during which a signal of the first photoelectric conversion film is accumulated, and a second accumulation period during which a signal of the second photoelectric conversion film is accumulated, does not overlap the other from among the first accumulation period and the second accumulation period.

A photo sensor includes a plurality of pixel blocks, each including one or more anchor pixels and one or more non-anchor pixels. The anchor pixels produce first sensor signals and the non-anchor pixels produce second sensor signals. An amplifier circuit amplifies the first and second sensor signals. A variable bit-depth analog to digital converter (ADC) circuit quantizes amplified versions of the first sensor signals into first digitized sensor signals with a first bit-depth. The ADC circuit also quantizes amplified versions of the second sensor signals into second digitized sensor signals with a second bit-depth that is lower than the first bit depth. The second bit-depth may be selected based on anchor pixel statistics derived from the one or more first digitized sensor signals.

In an embodiment, the present invention is an imaging engine assembly that includes a housing with a window, an imaging assembly positioned within the housing, the imaging assembly operable to capture image data over a field of view extending through the window and decode an indicium captured in the image data, and a cover positioned at least partially over the housing. The imaging engine housing and the cover are configured such that the cover is alternatively mountable between a first orientation and a diametrically opposed second orientation relative to the housing.

Disclosed are an image sensor, an operating method thereof, and an electronic device including the image sensor. The image sensor includes a pixel array including a plurality of pixels, a first selection/read-out circuit, a second selection/read-out circuit, and a controller provided to select a pixel of the pixel array and control the first and second selection/read-out circuits to read out information of the selected pixel. The first selection/read-out circuit provides a signal for selecting a pixel of the pixel array in a first direction, reads out a plurality of pixel signals received from the pixel array in a direction corresponding to the first direction, and the second selection/read-out circuit provides a signal for selecting a pixel of the pixel array in a second direction, and reads out a plurality of pixel signals received from the pixel array in a direction corresponding to the second direction.

Provided is an image sensor using photon counting, the image sensor including a pixel including a plurality of sub-pixels, a plurality of counters which are respectively connected to the plurality of sub-pixels and configured to count and output a plurality of pulse signals generated based on photons incident on each of the plurality of sub-pixels, and an operator configured to perform an operation on an output value output from each of the plurality of counters.

An image sensor, comprising a pixel region in which a plurality of pixel units are arranged, each pixel unit having first and second photoelectric conversion portions, a first output portion that outputs, outside of the image sensor, a first signal based on a signal from the first photoelectric conversion portion of the pixel units, and a second output portion that outputs a second signal based on a signal from the first photoelectric conversion portion and a signal from the second photoelectric conversion portion of the pixel units, wherein output of the first signal from the first output portion and output of the second signal from the second output portion are performed in parallel.

In dynamic vision sensor (DVS) or change detection sensors, the chip or sensor is configured to control or modulate the event rate. For example, this control can be used to keep the event rate close to a desired rate or within desired bounds. Adapting the configuration of the sensor to the scene by changing the ON-event and/or the OFF-event thresholds, allows having necessary amount of data, but not much more than necessary, such that the overall system gets as much information about its state as possible.

The present disclosure relates to a solid-state imaging apparatus, a manufacturing method of the same and an electronic device which can make an apparatus size further smaller. A solid-state imaging apparatus includes: a laminate of a first structure in which a pixel array unit in which pixels that perform photoelectric conversion are two-dimensionally arranged is formed and a second structure in which an output circuit unit configured to output pixel signals output from the pixels to an outside of an apparatus is formed. The output circuit unit, a first through hole via which penetrates through a semiconductor substrate constituting part of the second structure, and an external terminal for signal output connected to the outside of the apparatus are disposed below the pixel array unit of the first structure. The present disclosure can be applied, for example, to a solid-state imaging apparatus or the like.

A solid imaging element (11a) according to an embodiment includes: a light reception element (402) that outputs an electric signal in accordance with incident light, a detection unit (30) that detects whether a change quantity of the electric signal output from the light reception element has exceeded a threshold, and outputs a detection signal expressing a detection result of the detection, a temperature measurement unit (51) that measures temperature, and a setting unit (52) that sets the threshold on the basis of the temperature measured by the temperature measurement unit.