Patent classifications
H10D89/931
PROTECTION ELECTRONIC DEVICE FOR THE PREVENTION OF DAMAGES INDUCED BY PLASMA-ASSISTED PROCESSES, AND MANUFACTURING METHOD THEREOF
An electronic device includes a circuit module and a protection module. The circuit module includes a P-N junction between a reference terminal and an electrical node, and metal connection lines coupled to the electrical node and configured to be charged due to antenna effect. The protection module includes an HV transistor and a capacitor. The capacitor is connected between the electrical node and the HV transistor and configured to turn on the HV transistor when the electrical node charges positively due to the antenna effect. The circuit module is thus maintained at a potential that does not damage the electronic device.
Testing circuitry in a stacked semiconductor device using through silicon vias
A method of testing a semiconductor device includes providing a first wafer that includes a first surface, a second surface that is allocated at an opposite side of the first surface, a first electrode penetrating the first wafer from the first surface to the second surface, and a pad formed on the first surface and coupled electrically with the first electrode, providing a second wafer that includes a second electrode penetrating the second wafer, stacking the first wafer onto the second wafer to connect the first electrode with the second electrode such that the second surface of the first wafer faces the second wafer, probing a needle to the pad, and supplying, in such a state that the first wafer is stacked on the second wafer, a test signal to the first electrode to input the test signal into the second wafer via the first electrode and the second electrode.