A backside power and ground distribution network is formed on a wafer substrate layer by selectively etching backside PSV openings through a backside surface of the wafer substrate layer, forming n-type and p-type conductive regions in the wafer substrate layer at the bottoms of first and second backside PSV openings in position for electrical contact with an n-well and p-well regions, and then forming first and second backside PSV conductors in the first and second backside PSV openings to be directly electrically connected over the n-type and p-type conductive regions to the n-well and p-well regions in the wafer substrate layer.

An integrated electronic device is provided. An example integrated electronic device includes: an upper semiconductive region of a first conductivity type; a first and second semiconductive well of a second conductivity type, which extend in the upper semiconductive region; a first electronic component formed in the first semiconductive well with a terminal coupled to the first semiconductive well; and a second electronic component formed in the second semiconductive well with a terminal coupled to the second semiconductive well. A decoupling structure interposed between the first and the second semiconductive wells includes: a third semiconductive well of the second conductivity type facing the second semiconductive well; a biasing terminal coupled to the third semiconductive well set to a supply voltage; and a barrier structure facing the first semiconductive well with a separation semiconductive region of the first conductivity type and a dielectric structure laterally delimiting the separation semiconductive region.

A nitride semiconductor device is a nitride semiconductor device including an active element and a passive element, and includes: a nitride semiconductor layer divided into an active region and an inactive region in a plan view; and a metal layer in contact with the nitride semiconductor layer in the inactive region. The active element is provided in the active region, and the passive element is provided in the inactive region. The metal layer includes a coherent state or a metamorphic state relative to the nitride semiconductor layer.

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first transistor and a clamping device. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The first transistor is disposed on the second nitride semiconductor layer. The first transistor includes a first control electrode, a first current electrode and a second current electrode. The clamping device is disposed on the second nitride semiconductor layer and electrically coupled with the first transistor. The clamping device includes a second transistor and a third transistor electrically coupled with the second transistor. The clamping device is electrically coupled with the first current electrode and the second current electrode of the first transistor.