According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration.

A nitride semiconductor light-emitting element includes an N-type cladding layer, an N-side guide layer, an active layer, a P-type cladding layer, and a P-side guide layer (an upper P-side guide layer) and an electron blocking layer that are disposed between the active layer and the P-type cladding layer. The N-type cladding layer, the N-side guide layer, the P-side guide layer, the electron blocking layer, and the P-type cladding layer contains Al. The active layer includes an N-side barrier layer, a well layer disposed above the N-side barrier layer, and a P-side barrier layer disposed above the well layer. The average band gap energy of the P-side barrier layer is greater than the average band gap energy of the N-side barrier layer. A thickness of the P-side barrier layer is less than a thickness of the N-side barrier layer.

A display device includes a first electrode, second electrodes, light emitting elements, a bank layer, and connection electrodes. Each of the second electrodes comprises an electrode stem part overlapping the bank layer and electrode branch parts branching from the electrode stem part and disposed partially in an emission area, and the connection electrodes comprise a first connection electrode disposed on the first electrode, overlapping an upper bank part of the bank layer and having a part disposed in a first sub-area, a second connection electrode disposed on a first electrode branch part of one of the second electrodes, overlapping a lower bank part of the bank layer and having a part disposed in a second sub-area, and a third connection electrode disposed on second electrode branch parts of different second electrodes of the second electrodes and on the first electrode and surrounding a part of the first connection electrode.

A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm.sup.3 for the intended crystal growth.

A light-emitting element comprises: a first semiconductor stack having a first conductivity type; an active layer formed on the first semiconductor stack; a second semiconductor stack having a second conductivity type formed on the active layer; and a first current-spreading layer having the first conductivity type interposed in the second semiconductor stack.

A semiconductor optical device includes: a ridge stripe structure portion 20 in which a first compound semiconductor layer 31, an active layer 32, and a second compound semiconductor layer 32 are stacked and which has a first end surface 21 which emits light and a second end surface 22 opposite to the first end surface 21; and a current regulation region 41 provided to be adjacent to at least one of ridge stripe adjacent portions 40 positioned at both sides of the ridge stripe structure portion 20, at the second end surface side, and to be away from the ridge stripe structure portion 20. A bottom surface of the current regulation region 41 is under the active layer 33, and a top surface of the ridge stripe adjacent portion 40 excluding the current regulation region 41 is above the active layer 33.

A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second relatively-highly silicon-doped region. The second relatively-highly silicon-doped region is a sublayer of the active layer of the LED. The first relatively-highly silicon-doped region is a sublayer of the N-type layer of the LED. The first relatively-highly silicon-doped region is also separated from the remainder of the N-type layer by an intervening sublayer that is only lightly doped with silicon. The silicon doping profile promotes current spreading and high output power (lumens/watt). The LED has a low reverse leakage current and a high ESD breakdown voltage. The strain release layer has a concentration of indium that is between 510.sup.19 atoms/cm.sup.3 and 510.sup.20 atoms/cm.sup.3, and the first and second relatively-highly silicon-doped regions have silicon concentrations that exceed 110.sup.18 atoms/cm.sup.3.

A display apparatus and a method of manufacturing the same are disclosed. The display apparatus includes: a first substrate including a light emitting diode part including a plurality of light emitting diodes regularly arranged on the first substrate; and a second substrate including a TFT panel unit including a plurality of TFTs driving the light emitting diodes. The first substrate and the second substrate are coupled to each other so as to face each other such that the light emitting diodes are electrically connected to the TFTs, respectively. The display apparatus is implemented using micro-light emitting diodes formed of nitride semiconductors and thus can provide high efficiency and high resolution to be applicable to a wearable apparatus while reducing power consumption.

A method for producing an optical device includes: forming an n-type layer over a substrate by a MOCVD method; forming a first active layer over the n-type layer by a MOCVD method; forming an intermediate layer over the first active layer by a MOCVD method; forming a second active layer having a band gap energy different from the band gap energy of the first active layer over the intermediate layer by a MOCVD method; forming a first p-type layer over the second active layer by a MOCVD method; forming a groove having a depth reaching the intermediate layer from a side of the first p-type layer; forming an electron blocking layer by sputtering over the intermediate layer exposed at a bottom surface of the groove; forming a semiconductor layer over the electron blocking layer by sputtering; and forming a second p-type layer as defined herein.

A light emitting device includes a first conductive semiconductor layer on a substrate, a control layer interposed between the substrate and the first conductive semiconductor layer. The control layer includes a first nitride semiconductor layer having aluminum (Al), a plurality of nano-structures on the first nitride semiconductor layer, and a second nitride semiconductor layer provided on the first nitride semiconductor layer and having gallium (Ga).