A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group III nitride alloy. At least one of the n-type layers is a compositionally graded n-type group III nitride, and at least one of the p-type layers is a compositionally graded p-type group III nitride. A first ohmic contact for injecting current is formed on the substrate, and a second ohmic contact is formed on a surface of at least one of the p-type layers. Utilizing the disclosed structure and methods, a device capable of emitting light over a wide spectrum may be made without the use of phosphor materials.

A III nitride semiconductor epitaxial substrate having more excellent surface flatness is provided, in which the problems of crack formation and the double peaks in the shape of the EL spectrum are mitigated by employing appropriate conditions for Si doping on an AlN layer on a substrate; a III nitride semiconductor light emitting device; and methods of producing the same. A III nitride semiconductor epitaxial substrate has a substrate of which at least a surface portion is made of AlN, an undoped AlN layer formed on the substrate, an Si-doped AlN buffer layer formed on the undoped AlN layer, and a superlattice laminate formed on the Si-doped AlN buffer layer. The Si-doped AlN buffer layer has an Si concentration of 2.010.sup.19/cm.sup.3 or more and a thickness of 4 nm to 10 nm.

Device successively including a substrate including a metal layer capable of reflecting a radiation; a first layer of a III/N type alloy, p-type doped, and including a first surface, opposite the metal layer, the first surface being provided with cavities; a light-emitting layer made of a III/N-type alloy, capable of generating the radiation; a second layer of a III/N-type alloy, n-type doped, having the radiation coming out therethrough; wherein a non-metallic filling material transparent in the spectral range is arranged within the cavities.

A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer disposed on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first conductive semiconductor layer includes a first superlattice layer including a plurality of first sub layers and a plurality of second sub layers, and a first sub layer of the plurality of first sub layers and a second sub layer of the plurality of second sub layers are alternately disposed. The semiconductor structure includes a composition of a first dopant which is a n-type dopant.

An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

A light-emitting chip includes a light-emitting unit, first and second electrode units. The light-emitting unit includes first and second conductivity type semiconductor layers and an active layer. The first electrode unit includes two first electrodes which are spaced apart from each other by a first distance, and which are electrically connected to the first conductivity type semiconductor layer. The second electrode unit includes two second electrodes electrically connected to the second conductivity type semiconductor layer. The first and second electrode units are spaced apart from each other by a second distance, and the first distance is greater than the second distance.

A display apparatus includes a support substrate, a plurality of light emitting structures regularly arranged on the support substrate, and a wavelength conversion part disposed on the plurality of light emitting structures. The wavelength conversion part includes light transmitting portions and blocking portions, the light transmitting portions being disposed on the light emitting structures, respectively, and each of the light transmitting portions including a phosphor for converting a wavelength of light emitted from the corresponding light emitting structure. The support substrate includes a plurality of conductive patterns electrically connected to the light emitting structures, and the light emitting structures are coupled to the plurality of conductive patterns.

A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-containing layer on a side of the first electron blocking layer opposite to the first aluminum-containing layer, wherein the second aluminum-containing layer has a second thickness and a band gap greater than the band gap of the first electron blocking layer; and wherein a ratio of the second thickness of the second aluminum-containing layer to the first thickness of the first aluminum-containing layer is between 0.8 and 1.2.

A light-emitting element includes: a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a fourth semiconductor layer in this order. The first semiconductor layer is Al.sub.x1In.sub.y1Ga.sub.1-x1-y1N (0x11, 0y11, 0x1+y11), the second semiconductor layer is Al.sub.x2In.sub.y2Ga.sub.1-x2-y2N (0x21, 0y21, 0x2+y21), the third semiconductor layer is Al.sub.x3In.sub.y3Ga.sub.1-x3-y3N (0x31, 0y31, 0x3+y31), and the fourth semiconductor layer is Al.sub.x4In.sub.y4Ga.sub.1-x4-y4N (0x41, 0y41, 0x4+y41).

A display device includes a first electrode and a second electrode disposed on a substrate, the first and second electrodes extending in a first direction in parallel to each other, a first insulating layer disposed on the first and second electrodes, light-emitting elements disposed on the first insulating layer, the light-emitting elements including first end portions disposed on the first electrode and second end portions disposed on the second electrode, an oxide semiconductor layer disposed on the first insulating layer and the light-emitting elements, the oxide semiconductor layer including a first conductive portion electrically contacting the first end portions of the light-emitting elements, a second conductive portion electrically contacting the second end portions of the light-emitting elements, and a semiconductive portions disposed between the first and second conductive portions, and a second insulating layer disposed on the oxide semiconductor layer.