A method of producing a power semiconductor device includes: providing a semiconductor body; forming, at the semiconductor body, a polycrystalline semiconductor region; forming, at the polycrystalline semiconductor region, an amorphous sublayer; subjecting the amorphous sublayer to a re-crystallization processing step to form a re-crystallized sublayer; and forming a metal layer at the re-crystallized sublayer.

Disclosed is a method for manufacturing a semiconductor device. The method includes: forming a gate insulating material layer on a substrate; forming a gate material layer on the gate insulating material layer; and performing an etching process on the gate material layer and the gate insulating material layer to form a gate layer and a gate insulating layer. The gate insulating layer and the gate layer each include a first end and a second end opposite to each other in a direction parallel to a channel length. The first end of the gate insulating layer is recessed inwards by a preset length relative to the first end of the gate layer, and the second end of the gate insulating layer is recessed inwards by the preset length relative to the second end of the gate layer.

A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, formed with a gate trench at a surface side of the cell portion, and a gate electrode buried in the gate trench via a gate insulating film, forming a channel at a portion lateral to the gate trench at ON-time, the outer peripheral portion has a semiconductor surface disposed at a depth position equal to or deeper than a depth of the gate trench, and the semiconductor device further includes a voltage resistant structure having a semiconductor region of a second conductivity type formed in the semiconductor surface of the outer peripheral portion.

Disclosed are a three-dimensional semiconductor device and a method of fabricating the same. The semiconductor device includes: a first active region on a substrate, the first active region including a pair of lower source/drain regions and a lower channel structure; a second active region on the first active region, the second active region including a pair of upper source/drain regions and an upper channel structure; and a gate electrode on the lower and upper channel structures. The gate electrode includes: first and second metal structures, which are respectively provided adjacent bottom and top surfaces of semiconductor layers of the lower and upper channel structures.

A semiconductor device comprises a transistor. The transistor includes: a gate insulating film formed on a semiconductor substrate; a gate electrode formed on the gate insulating film and containing germanium at least in an upper region of the electrode; a source region formed in the semiconductor substrate; and a drain region formed in the semiconductor substrate.

A transistor structure includes an epitaxial layer, a well region, multiple gate regions, multiple first heavily doped regions, and multiple second heavily doped regions. The well region is formed on the epitaxial layer. The gate regions are formed in the epitaxial layer and penetrate the well region. Each of the first heavily doped regions is formed on a first side of the corresponding gate region, and the first heavily doped regions are isolated from each other. Each of the second heavily doped regions is formed on a second side of the corresponding gate region, and the second heavily doped regions are isolated from each other. The first side and the second side are different.

A semiconductor device that may include an outer ring formed within an active region wherein the outer ring is operatively connected to the active region. A contact pad formed within an inner ring wherein the contact pad is operatively connected to the inner ring. An insulating region formed between the outer ring and the inner ring. A removable finger formed between the outer ring and the inner ring wherein the removable finger operatively connects the outer ring to the inner ring.

A semiconductor device of embodiments includes: a semiconductor layer having a first face and a second face and including a first trench provided on a first face side; a first field plate electrode provided in the first trench; a gate electrode provided in a gate trench; a first electrode provided on the first face side of the semiconductor layer and electrically connected to the first field plate electrode; a second electrode provided on the second face side of the semiconductor layer; and a connection portion provided between the first electrode and the first field plate electrode, electrically connected to the first electrode and the first field plate electrode, and having an electrical resistance higher than an electrical resistance of the first field plate electrode.

A semiconductor device includes an active area on a substrate, a gate insulating layer on the active area, and a gate electrode structure on the gate insulating layer. The gate electrode structure includes a first blocking impurity-doped layer in contact with an upper surface of the gate insulating layer and doped with a blocking impurity, a middle layer on the first blocking impurity-doped layer, and a second blocking impurity-doped layer on the middle layer and doped with the blocking impurity. A blocking impurity concentration in the second blocking impurity-doped layer is higher than a blocking impurity concentration in the first blocking impurity-doped layer.

A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.