A thermoelectric transducer includes a substrate, a thermoelectric film on the substrate, a first electrode on the substrate, and a second electrode on the substrate, the second electrode being different from the first electrode in work function. The first electrode and the second electrode are in contact with the same side of the thermoelectric film. The outer edge of the thermoelectric film is located inner than the outer edge of the substrate.

The present invention relates to a thermoelectric measurement system based on a liquid eutectic gallium-indium electrode, whereby thermoelectric performance can be measured with excellent efficiency and high reproducibility even without construction of expensive equipment, various organic molecules as well as large-area molecular layers can be measured, and various thermoelectric materials, such as inorganic materials and inorganic-organic composite materials, can be measured. In addition, non-toxic liquid metal EGaIn is used as an upper electrode, so the damage to even a substance of measurement in the form of a nano-level thin film can be minimized, and the measurement of thermoelectric performance can be performed on even nano- to micro-level organic thermoelectric elements. Therefore, the thermoelectric measurement system is widely utilized across the thermoelectric element industry.

Methods of making various fibers are provided including co-axial fibers with oppositely doped cladding and core are provide; hollow core doped silicon carbide fibers are provided; and doubly clad PIN junction fibers are provided. Additionally methods are provided for forming direct PN junctions between oppositely doped fibers are provided. Various thermoelectric generators that incorporate the aforementioned fibers are provided.

A thermoelectric conversion element of the present disclosure includes a thermoelectric conversion layer, a first metal layer, a second metal layer, a first joining layer, and a second joining layer. At least one of the first joining layer and the second joining layer includes a second alloy. A content of Mg in the second alloy is 84 atm % or more and 89 atm % or less, a content of Cu in the second alloy is 11 atm % or more and 15 atm % or less, and a content of an alkaline earth metal in the second alloy is 0 atm % or more and 1 atm % or less.

A thermoelectric module includes: an electrode; a double layer stacked on a thermoelectric pellet; and a solder layer interposed between the double layer and the electrode to bond the double layer to the electrode, the solder layer containing a Sn—Cu-based alloy. The solder layer is formed to have an interface with one of the double layer and the electrode and has at least one ε layer having an ε phase (Cu.sub.3Sn).

A thermoelectric module including at least a first and a second thermoelectric element comprising a thermoelectric semiconductor; an electrode connecting the first and second thermoelectric elements; and at least a first and a second joining layer, the first joining layer positioned between the first thermoelectric element and the electrode, and the second joining layer positioned between the second thermoelectric element and the electrode; and at least a first and a second barrier layer including an alloy including Cu, Mo and Ti, the first barrier layer positioned between the first thermoelectric element and the first joining layer, and the second barrier layer positioned between the second thermoelectric element and the second joining layer. The module prevents heat diffusion of the material of the joining layer, preventing the oxidation and deformation of the thermoelectric element under high temperature environment, and exhibiting improved operational stability due to excellent adhesion to a thermoelectric element.

A stannide thermoelectric conversion module includes a thermoelectric conversion element, and an electrode material bonded to the thermoelectric conversion element with a bonding material therebetween, the thermoelectric conversion element is a stannide thermoelectric conversion element including a thermoelectric conversion part containing a stannide compound having composition represented by a general expression Mg.sub.2Si.sub.1-xSn.sub.x (where x satisfies a relation of 0.5<x<1 in the general expression), and a first diffusion prevention layer located on a surface of the thermoelectric conversion part, wherein the first diffusion prevention layer includes an Mo layer, and the bonding material is a non-flowable bonding material having no fluidity.

A thermoelectric generation module includes a first substrate and a second substrate, a plurality of first electrodes and second electrodes that are arranged on the first substrate and the second substrate, a thermoelectric conversion element arranged between the first electrode and the second electrode, and a terminal pin connected to the second electrode. The second substrate includes an insulator layer made of an electrical insulating material, a through-hole that penetrates the insulator layer for insertion of the terminal pin, and an annular metal layer arranged at a peripheral portion of the through-hole. A space between the terminal pin and the through-hole is sealed by solder.

A semiconductor substrate contains a clathrate compound of the following General Formula (I). The semiconductor substrate includes a variable-composition layer which includes a pn junction and where composition of the clathrate compound varies along a thickness direction. A rate of change in y in the thickness direction of at least a portion of the variable-composition layer is 1×10.sup.−4/μm or more.
A.sub.xB.sub.yC.sub.46-y   (I) In General Formula (I), A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, B represents at least one element selected from the group consisting of Au, Ag, Cu, Ni, and Al, and C represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 to 9, and y is 3.5 to 6 or 11 to 17.

A metal junction thermoelectric device includes at least one thermoelectric element. The thermoelectric element has first and second opposite sides, and a first conductor made from a first metal, and a second conductor made from a second metal. The first and second conductors are electrically interconnected in series, and the first and second conductors are arranged to conduct heat in parallel between the first and second sides. The first metal has a first occupancy state, and the second metal has a second occupancy state that is lower than the first occupancy state. A temperature difference between the first and second sides of the thermoelectric element causes a charge potential due to the difference in occupancy states of the first and second metals. The charge potential generates electrical power.