A composite including: at least one selected from a silicon oxide of the formula SiO.sub.2 and a silicon oxide of the formula SiO.sub.x wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

A composite including: at least one selected from a silicon oxide of the formula SiO.sub.2 and a silicon oxide of the formula SiO.sub.x wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

The present invention provides a conversion material including a first phase providing a matrix and a second phase comprising a nanoscale or microscale material providing electron mobility. The conversion material converts heat from a single macroscopic reservoir into voltage.

The present invention provides a high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity and a preparation method thereof. The general formula of the high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity is Zr.sub.xHf.sub.1-xNi.sub.yPd.sub.1-ySn, where x is equal to 0.6 to 0.8, and y is equal to 0.8 to 0.9. The preparation method of the high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity comprises the following steps: preparing and mixing materials according to the general formula of Zr.sub.0.7Hf.sub.0.3Ni.sub.0.85Pd.sub.0.15Sn, putting the mixed raw materials in a levitation melting for melting, grinding the obtained ingot into powder and drying it, and sintering the powder by using spark plasma sintering into a bulk high-entropy Half-Heusler thermoelectric material with a low lattice thermal conductivity. The high-entropy Half-Heusler thermoelectric material of the present invention has a relatively low lattice thermal conductivity and a relatively high ZT value.

A semiconductor apparatus is provided, including: a housing; a heat-dissipation substrate; a first semiconductor chip provided on the heat-dissipation substrate; a temperature detecting unit provided on the housing; a first thermoelectric member electrically connecting the first semiconductor chip and the temperature detecting unit; and a second thermoelectric member electrically connecting the first semiconductor chip and the temperature detecting unit, the second thermoelectric member being made of a different material than the first thermoelectric member. The thermal conductivity of the heat-dissipation substrate is higher than the thermal conductivity of the housing.

A magnetic alloy material according to the present disclosure is an iron-aluminum-terbium based magnetic alloy material containing a total of 70 atomic percent or more of three elements of iron, aluminum, and terbium.

A thermoelectric device to generate electrical power at high voltages, for example 110 volts to 900 volts, using a thermopile, a temperature differential applied to the thermopile and the Seebeck Coefficient of dissimilar materials assembled in a defined manner and in conjunction with controls and batteries to power electric devices.

A metal junction thermoelectric device includes at least one thermoelectric element. The thermoelectric element has first and second opposite sides, and a first conductor made from a first metal, and a second conductor made from a second metal. The first and second conductors are electrically interconnected in series, and the first and second conductors are arranged to conduct heat in parallel between the first and second sides. The first metal has a first occupancy state, and the second metal has a second occupancy state that is lower than the first occupancy state. A temperature difference between the first and second sides of the thermoelectric element causes a charge potential due to the difference in occupancy states of the first and second metals. The charge potential generates electrical power.

A system and method are disclosed for internally heated concentrated solar power (CSP) thermal absorbers. The system and method involve an energy-generating device having at least one heating unit. At least one heating unit preheats the energy-generating device in order to expedite the startup time of the energy-generating device, thereby allowing for an increase in efficiency for the production of energy. In some embodiments, the energy-generating device is a CSP thermal absorber. The CSP thermal absorber comprises a housing, a thermal barrier, a light-transparent reservoir containing a liquid alkali metal, at least one alkali metal thermal-to-electric converter (AMTEC) cell, an artery return channel, and at least one heating unit. Each heating unit comprises a heating device and a metal fin. The metal fin is submerged into the liquid alkali metal, thereby allowing the heating device to heat the liquid alkali metal via the fin.

Systems, methods, and devices of the various embodiments provide for microfabrication of devices, such as semiconductors, thermoelectric devices, etc. Various embodiments may include a method for fabricating a device, such as a semiconductor (e.g., a silicon (Si)-based complementary metal-oxide-semiconductor (CMOS), etc.), thermoelectric device, etc., using a mask. In some embodiments, the mask may be configured to allow molecules in a deposition plume to pass through one or more holes in the mask. In some embodiments, molecules in a deposition plume may pass around the mask. Various embodiments may provide thermoelectric devices having metallic junctions. Various embodiments may provide thermoelectric devices having metallic junctions rather than junctions formed from semiconductors.