A display device comprises a substrate having a display area, first and second gate lines extending in a first direction in the display area, first and second data lines extending in the display area in a second direction intersecting the first direction, and a pixel defined by the first and second gate lines and the first and second data lines, and having a thin-film transistor and a pixel electrode. The thin-film transistor comprises a gate electrode connected to the second gate line, a source electrode connected to the first data line, and a drain electrode spaced apart from the first source electrode. The drain electrode includes a first end portion extending in the second direction and overlapping with the gate electrode in plan view, and a second end portion electrically connected to the first end portion and to the pixel electrode.

The present invention provides a color filter substrate, a display device and a detection method thereof, aims to solve the problems of difficulty in failure positioning and low detection efficiency in existing display panels. The color filter substrate comprises a plurality of sub-pixels arranged in an array, each of the sub-pixels is provided with a color filter, and at least a part of columns of sub-pixels are marked column of sub-pixels. The shapes of the color filters of a part of sub-pixels of the marked column of sub-pixels are different from those of the remaining sub-pixels. The display device comprises the above-mentioned color filter substrate. The color filter substrate can be used in the display device, particularly suitable for the display device which adopts double side GOA circuits.

There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is , a gate capacitance per unit area is Co, a maximum gate voltage is Vgs.sub.(max), a channel width is W, a channel length is L, an average value of a threshold voltage is Vth, a deviation from the average value of the threshold voltage is Vth, and a difference in emission brightness of a plurality of EL elements is within a range of n %, a semiconductor display device is characterized in that

[00001]$A=\frac{2.Math.\mathrm{ID}}{*C_0}$$\frac{A}{{\left({\mathrm{Vgs}}_{\left(\max \right)}-\mathrm{Vth}\right)}^2}\frac{W}{L}{\left(\sqrt{1+\frac{n}{100}}-1\right)}^2*\frac{A}{.Math..Math.{\mathrm{Vth}}^2}$$.Math..Math..Math.\mathrm{Vth}.Math.\left(\sqrt{1+\frac{n}{100}}-1\right)*\sqrt{A*L/W}$

An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.

The present disclosure relates to an array substrate, a method for manufacturing the array substrate and a display panel. The array substrate includes: a substrate; a poly-silicon thin film disposed on the substrate and including grains arranged along a first direction and a second direction, wherein grain boundaries of the grains extend along the first direction and the second direction; and a plurality of thin film transistors each including a channel formed by the poly-silicon thin film, wherein the channel includes a plurality of intersecting channel portions, each of which extends along a direction that neither perpendicular to nor parallel with the first or second direction.

A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.

The invention provides a method for forming a surface oxide layer on an amorphous silicon including steps: using a HF acid to clean a surface of the amorphous silicon; using a water to clean the surface of the amorphous silicon being cleaned by the HF acid; drying the surface of the amorphous silicon after being cleaned by the water; using an extreme ultraviolet lithography to form a first oxide layer on the surface of the amorphous silicon after being dried; using an oxidizing solution to clean the surface of the amorphous silicon with the first oxide layer to thereby form a second oxide layer; and drying the surface of the amorphous silicon with the second oxide layer. By using the extreme ultraviolet lithography to form the first oxide layer, the surface of the amorphous silicon is given with strong hydrophilicity and therefore the distribution of water would be uniform.

The present disclosure relates to a new generation of laser-crystallization approaches that can crystallize Si films for large displays at drastically increased effective crystallization rates. The particular scheme presented in this aspect of the disclosure is referred to as the advanced excimer-laser annealing (AELA) method, and it can be readily configured for manufacturing large OLED TVs using various available and proven technical components. As in ELA, it is mostly a partial-/near-complete-melting-regime-based crystallization approach that can, however, eventually achieve greater than one order of magnitude increase in the effective rate of crystallization than that of the conventional ELA technique utilizing the same laser source.

The invention discloses a liquid crystal display device, a thin film transistor array substrate and a method of fabricating the same. The thin film transistor array substrate includes: a substrate including a plurality of photo-sensitive spacer areas, a plurality of thin film transistors arranged on the substrate, each of which includes a source and a drain, and a first planarizing layer overlying the plurality of thin film transistors. Multiple planarizing layer openings are arranged in the first planarizing layer in areas corresponding to the drains of the thin film transistors; a pixel electrode layer is arranged on the first planarizing layer and in contact with the drains; and a second planarizing layer is arranged on the pixel electrode layer and fills the planarizing layer openings.

A COA substrate manufacturing method including: forming a TFT on a base substrate; forming a second insulation layer on the TFT; forming a color resist layer on the second insulation layer; forming a third insulation layer on the color resist layer; forming a through hole which reveals the drain electrode of the TFT; forming an ITO film layer on the third insulation layer; forming a photoresist layer on the ITO film layer; performing a light-shielding process to the photoresist layer on the vias-region ITO film layer and an exposure process to the photoresist layer on the non vias-region ITO film layer; developing the photoresist layer on the vias-region ITO and the non vias-region ITO film layers to obtain a photoresist layer plug covered on the vias-region ITO film layer. The present invention utilizes the photoresist to fill the through hole which can improve the quality of a display device.