A method for forming a MEMS device is provided. The method includes forming a stack of piezoelectric films and metal films on a base layer, wherein the piezoelectric films and the metal films are arranged in an alternating manner. The method also includes forming a first trench in the stack of the piezoelectric films and the metal films. The method further includes forming at least one void at the side wall of the first trench. In addition, the method includes forming a spacer structure in the at least one void. The method further includes forming a contact in the first trench after the formation of the spacer structure.

A method of fabricating the semiconductor device includes the following steps. Forming a sacrificial portion at a first end of an upper electrode layer before a passivation layer is formed so that it supports a corresponding end portion of the passivation layer, making the passivation layer not suspended at all. In this way, the suspended portion of the passivation layer will not be damaged during the formation of a contact pad. In addition, subsequent to the formation of the contact pad, removing the sacrificial portion, freeing up a space under the end portion of the passivation layer so that the end portion itself becomes a suspended portion. This can ensure performance of the resulting semiconductor device.

Vertical packaging configurations for ultrasound chips are described. Vertical packaging may involve use of integrated interconnects other than wires for wire bonding. Examples of such integrated interconnects include edge-contact vias, through silicon vias and conductive pillars. Edge-contact vias are vias defined in a trench formed in the ultrasound chip. Multiple vias may be provided for each trench, thus increasing the density of vias. Such vias enable electric access to the ultrasound transducers. Through silicon vias are formed through the silicon handle and provide access from the bottom surface of the ultrasound chip. Conductive pillars, including copper pillars, are disposed around the perimeter of an ultrasound chip and provide access to the ultrasound transducers from the top surface of the chip. Use of these types of packaging techniques can enable a substantial reduction in the dimensions of an ultrasound device.

Disclosed is an ultrasonic transducer assembly comprising an ultrasonic transducer chip (100) having a main surface comprising a plurality of ultrasound transducer elements (112) and a plurality of first contacts (120) for connecting to said ultrasound transducer elements; a contact chip (400) having a further main surface comprising a plurality of second contacts (420); an backing member (300) comprising ultrasound absorbing and/or scattering bodies (310), said backing member comprising a first surface (302) on which the transducer chip is mounted and a second surface (306) on which the contact chip is mounted; and a flexible interconnect (200) extending over said backing member from the main surface to the further main surface, the flexible interconnect comprising a plurality of conductive tracks (210), each conductive track connecting one of said first contacts to a second contact. An ultrasound probe including such an assembly, an ultrasonic imaging system including such an ultrasound probes and manufacturing methods of such an assembly and probe are also disclosed.

A piezoelectric element, in which a piezoelectric material layer has a plurality of crystal particles and a plurality of void portions and, in at least one of two or more of the piezoelectric material layers, when the average thickness in the lamination direction of the piezoelectric material layer is defined as T.sub.P, the average circle-equivalent diameter of the plurality of crystal particles is defined as D.sub.G, the maximum length in the lamination direction of the plurality of void portions not contacting the electrode layers is defined as L.sub.V, and the average thickness of the electrode layers contacting the at least one piezoelectric material layer is defined as T.sub.E, 0.07T.sub.PD.sub.G0.33T.sub.P and T.sub.EL.sub.V0.3T.sub.P are established and the lead content is less than 1000 ppm.

A piezoelectric device and method of manufacturing the same and an inkjet head are described. In one embodiment, the inkjet print head comprises a plurality of jets, wherein each of the plurality of jets comprises a nozzle, a pressure chamber connected with the nozzle, a piezoelectric body coupled to the pressure chamber, and an electrode coupled to the piezoelectric body to cause displacement of the piezoelectric body to apply pressure to the pressure chamber in response to a voltage applied to the electrode; and wherein electrodes of two or more of the plurality of jets have different sizes to cause their associated piezoelectric bodies to have a uniform displacement amount when the voltage is applied to the electrodes.

The disclosed technology features methods for the manufacture of electrical components such as ultrasound transducers. In particular, the disclosed technology provides methods of creating an ultrasonic transducer by connecting one or more multi-layer printed circuits to an array of ultrasound transducer elements. In one embodiment, the printed circuits have traces in a single layer that are spaced by a distance that is greater than a pitch of the transducer elements to which the multi-layer printed circuit is to be connected. However the traces from all the layers in the multi-layer printed circuit are interleaved to have a pitch that is equal to the pitch of the transducer elements. The disclosed technology also features ultrasound transducers produced by the methods described herein.

A wafer scale ultrasonic sensor assembly includes a wafer substrate, an ultrasonic element, first and second protective layers, conductive wires, a transmitting material, an ASIC, a conductive bump, and a soldering portion. The wafer substrate includes a via. The ultrasonic element is exposed to the via. The conductive wires are on the first protective layer and connected to the ultrasonic element. The second protective layer covers the conductive wires, and the second protective layer has an opening corresponding to the ultrasonic element. The transmitting material contacts the ultrasonic element. The ASIC is connected to the wafer substrate, so that the via forms a space between the ASIC and the ultrasonic element. The conductive pillar is in a via defined through the ASIC, the wafer substrate, and the first protective layer, and the conducive pillar is respectively connected to the conductive wires and the soldering portion.

A piezoelectric device includes a body provided with a first region and a second region lined along a first direction. The first region deformably extends/contracts along the first direction. The second region deformably curves in such a manner that one or the other side in a second direction intersecting the first direction curves outward.

An ultrasound transducer used in an ultrasound system and a manufacturing method thereof includes: a backing block; a piezoelectric layer placed on the backing block; a matching layer placed on the piezoelectric layer; and a ground layer placed between the piezoelectric layer and the matching layer. The backing layer includes a connector that connects a transmitting unit and a receiving unit of an ultrasound system, and a wiring area that connects the piezoelectric layer and the connector. The wiring area is formed by etching and filling with metal material.