Disclosed is a self-powered vibration damper based on piezoelectricity and a control method. The damper comprises a loading platform, an energy collecting mechanism, a curved leaf spring, a vibration control mechanism and a substrate all connected in sequence, the circuit system comprises a rectifier circuit, a DC-DC voltage conversion circuit, an energy storage circuit, a control circuit and a charging battery, a first piezoelectric stack is connected with the input end of the rectifier circuit, the output end of the rectifier circuit is connected with the input end of the DC-DC voltage conversion circuit, the output end of the DC-DC voltage conversion circuit is connected with the input ends of the energy storage circuit and the charging battery, the output end of the energy storage circuit is connected with the input end of the control circuit, the output end of the control circuit is connected with the second piezoelectric stack.

A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

The invention provides a film having a high relative permittivity, a high volume resistivity, and a high breakdown strength. The film has a relative permittivity of 9 or higher at a frequency of 1 kHz and 30° C., a volume resistivity of 5E+15 Ω.Math.cm or higher at 30° C., and a breakdown strength of 500 V/μm or higher.

Provided is an aluminum nitride film in which, aluminum nitride crystal grains containing a metal element differing from aluminum and substituting for aluminum are main crystal grains of a polycrystalline film formed of crystal grains, and a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in at least one region of first and second regions corresponding to both end portions of the polycrystalline film in a film thickness direction of the polycrystalline film is higher than a concentration of the metal element in a center region of the aluminum nitride crystal grain in the at least one region, and is higher than a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in a third region located between the first region and the second region in the film thickness direction of the polycrystalline film.

A metal stack for templating the growth of AlN and ScAlN films is disclosed. The metal stack comprises one, two, or three layers of metal, each of which is compatible with CMOS post-processing. The metal stack provides a template that promotes the growth of highly textured c-axis {002} AlN and ScAlN films. The metal stacks include one or more metal layers with each metal layer having either a hexagonal {002} orientation or a cubic {111} orientation. If the metal stack includes two or more metal layers, the layers can alternate between hexagonal {002} and cubic {111} orientations. The use of ScAlN results in a higher piezoelectric constant compared to that of AlN for ScAlN alloys up to approximately 44% Sc. The disclosed metal stacks resulted in ScAlN films having XRD FWHM values of less than approximately 1.1° while significantly reducing the formation of secondary grains in the ScAlN films.

Various embodiments of an interconnect device and modules and systems that utilize such interconnect device are disclosed. In one or more embodiments, the interconnect device can include a printed circuit board (PCB). The PCB can include a substrate forming a resiliently deflectable element, a conductive material disposed on the substrate, and an electrical contact disposed on the resiliently deflectable element and electrically coupled to the conductive material. The interconnect device can also include a connector that includes a connecting pin configured to electrically couple with the electrical contact of the resiliently deflectable element of the PCB and cause the resiliently deflectable element to deflect when the element contacts the connecting pin.

A displacement magnification device has a first link portion including a first rigid body and a first plate spring that couples the first rigid body to a supporting portion and a movable portion. A second link portion includes a second rigid body and a second plate spring that couples the second rigid body to the supporting portion and the movable portion. In this structure, the first rigid body and the second rigid body play roles to suppress the bending of the first plate spring and the second plate spring. In addition, a connection portion between the first plate spring and the supporting portion, a connection portion between the second plate spring and the supporting portion, a connection portion between the first plate spring and the movable portion, and a connection portion between the second plate spring and the movable portion play roles of elastic hinges.

An object of the present invention is to improve the piezoelectricity of a PVT having the VDF ratio of 82 to 90% represented by a copolymer, in which copolymerization of vinylidene fluoride VDF and trifluoroethylene TrFe is 85 versus 15 (this is written as PVT85/15, and which is excellent in resistance to deformation, and heat resistance, etc. And therefore, it is also to obtain a piezoelectric film having piezoelectricity exceeding a PVT of less than 82 mol % of VDF represented by a PVT75/25, which conventionally shows the highest piezoelectricity, and a method of producing the same. A piezoelectric film is made of a mixture of two kinds (for example, a first copolymer is PVT85/15 and a second copolymer is PVT75/25) having different polymerization ratios of vinylidene fluoride VDF and trifluoroethylene TrFE.

A current introduction terminal includes a board made of resin. The board has a first face and a second face opposite each other. The board hermetically separates environments of different air pressures from each other. A plurality of through via holes corresponding both to a plurality of metal terminals of a first surface-mount connector to be mounted on the first face and to a plurality of metal terminals of a second surface-mount connector to be mounted on the second face are formed to penetrate between the first and second faces, and then hole parts of the through via holes are filled with resin.

An ultrasonic device, comprising an ultrasonic transducer (400) comprising: a membrane (405) suspended above a cavity (403) arranged on the upper surface side of a substrate (401); a piezoelectric layer (407) attached to a surface of the membrane (405); a first electrode (E1) arranged on the lower surface side of the cavity (403); and a second electrode (E3) arranged on the upper surface side of the cavity (403), in contact with the piezoelectric layer (407), the device further comprising a control circuit (CTRL) connected to the first (E1) and second (E3) electrodes and capable of applying a first control voltage (VDC) on the first electrode (E1), and a second control voltage (VAC) different from the first voltage on the second electrode (E3).