A piezoelectric element exhibiting a small leakage current density and high reliability as compared with a KNN thin film piezoelectric element in the related art is provided. The piezoelectric element is characterized by including a lower electrode, a piezoelectric layer primarily made from potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO.sub.3, and an upper electrode, wherein the piezoelectric layer is present between the lower electrode and the upper electrode, and the piezoelectric layer has the value determined by dividing the maximum value of intensity of a diffraction peak, where the angle of 2θ is within the range of 21.1°≦2θ≦23.4° in the X-ray diffraction pattern (2θ/θ), by the intensity of a diffraction peak, where 2θ is within the range of 30.1°≦2θ≦33.3°, of 0.04 or less.

A stacked film includes an oxide film including a ZrO.sub.2 film, a metal oxide film provided on the oxide film, and a predetermined metal film provided on the metal oxide film and having a single orientation, and the metal oxide film is a PtO film or a PdO film. In the case of this structure, the predetermined metal film has a single orientation, and characteristics of the piezoelectric film such as PZT formed on the predetermined metal film are improved. Therefore, excellent characteristics such as an increase in the driving force due to the piezoelectric film or a reduction in leakage current can be exhibited.

A piezoelectric device includes a piezoelectric vibrating piece, a base, a wire, a conductive adhesive, and a buffer layer. The piezoelectric vibrating piece includes excitation electrodes and extraction electrodes at both principal surfaces. The base includes the piezoelectric vibrating piece and a first wiring electrode and a second wiring electrode connected to the extraction electrodes. The wire connects the extraction electrode on a surface opposite to a side of the base among the extraction electrodes to one wiring electrode of the first wiring electrode and the second wiring electrode. The conductive adhesive connects the extraction electrode at the base side among the extraction electrodes to the other wiring electrode among the first wiring electrode and the second wiring electrode. The buffer layer reduces stress of the wire between the extraction electrode to which the wire is connected and the piezoelectric vibrating piece.

To perform poling treatment in a simple procedure by dry process. A magnetic field poling device includes a first holding part configured to hold a film-to-be-poled (2); a second holding part configured to hold a magnet generating a magnetic field B to the film-to-be-poled (2); and a moving mechanism configured to move the first holding part or the second holding part in a direction perpendicular to the direction of the magnetic field B.

A backing member includes: a resin layer which contains a filler; and a plurality of leads each of which is embedded in the resin layer to penetrate through the resin layer from an upper surface of the resin layer to a lower surface of the resin layer. Each of the leads includes a wiring portion, and a terminal portion connected to one end of the wiring portion. A width dimension and a depth dimension of the wiring portion are smaller than a width dimension and a depth dimension of the terminal portion, and an interval between adjacent ones of the wiring portions of the leads is wider than an average particle size of the filler.

Provided is an ultrasonic sensor including a piezoelectric elements arranged along a first direction and a second direction on a vibration plate, an insulation layer, and conductive lines. Each piezoelectric element including a first electrode, a piezoelectric layer, and a second electrode. The first electrode is partially removed in a regions between the piezoelectric elements. The second electrode is a separate electrode provided for each piezoelectric element. The insulation layer covers the second electrodes and has holes through which portions at opposite ends of the second electrodes along the first direction are partially exposed. Each conductive line is provided between adjacent ones of the second electrodes along the first direction and electrically connects, via the holes, the adjacent ones of the second electrodes.

The present invention relates to a piezoelectric fiber having excellent flexibility, the piezoelectric fiber employs a conductive fiber member as an inner electrode, on which a piezoelectric polymer layer, an outer electrode and a coating layer are sequentially formed, thereby having excellent flexibility and sufficient elasticity to be sewed, woven, knotted or braided. Therefore, the piezoelectric fiber can be applied in power supplies for a variety of sizes and types of wearable electronic devices, portable devices, clothing, etc. In addition, since the piezoelectric fiber has excellent piezoelectricity and durability because of the above-described structure, it can effectively convert deformation or vibration caused by external physical force into electric energy, and thus can replace existing ceramic-based and polymer piezoelectric bodies, etc. Furthermore, an economical and simple method of manufacturing a piezoelectric fiber having excellent piezoelectricity is provided.

A Piezoelectric Micromachined Ultrasonic Transducer (PMUT) device is provided. The PMUT includes a substrate and an edge support structure connected to the substrate. A membrane is connected to the edge support structure such that a cavity is defined between the membrane and the substrate, where the membrane is configured to allow movement at ultrasonic frequencies. The membrane includes a piezoelectric layer and first and second electrodes coupled to opposing sides of the piezoelectric layer. The PMUT is also configured to operate in a Surface Acoustic Wave (SAW) mode. Also provided are an integrated MEMS array, a method for operating an array of PMUT/SAW dual-mode devices, and a PMUT/SAW dual-mode device.

The invention relates to a module (1) for a display and/or operating device (10), the module (1) comprising a first transparent electrode (3) having a first matrix of a plurality of electrode islands (3a, 3b, 3c); a transparent piezoelectric layer (2) having a first and a second area; a second transparent electrode (4); a transparent substrate (12); and a conductive path arrangement having at least a first conductive path (24a) on the transparent piezoelectric layer (2), wherein the transparent substrate (12) is coated with the second transparent electrode (4) and the second transparent electrode (4) is disposed between the transparent substrate and the transparent piezoelectric layer (2), and the first area is coated with the first transparent electrode and the second area is coated with the second transparent electrode (4); and the electrode islands (3a, 3b, 3c) are arranged electrically insulated from one another on the first area of the transparent piezoelectric material (2), wherein at least the first conductive path (24a) of the conductive path arrangement (25) is electrically connected to at least one of the electrode islands (3a, 3b, 3c), and at least the first conductive path (24a) and/or at least one of the electrode islands (3a, 3b, 3c) has a layer thickness from 95 nm to 195 nm.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. One or more patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the one or more electrodes and a planarized support layer is deposited over the sacrificial layer. The support layer is etched to form one or more cavities overlying the electrodes to expose the sacrificial layer. The sacrificial layer is etched to release the cavities around the electrodes. Then, a cap layer is fusion bonded to the support layer to enclose the electrodes in the support layer cavities.