A piezoelectric transformer comprises at least a laminate of a first member, a first piezoelectric element, a second piezoelectric element and a second member sequentially stacked one on the other in the above-listed order and a pressurizing mechanism for squeezing the first member and the second member together in the stacking direction. The ratio of the electromechanical coupling coefficient k.sub.33 relative to the electromechanical coupling coefficient k.sub.31 (k.sub.33/k.sub.31) of the first piezoelectric element and the second piezoelectric element is not less than 2.0.

Various methods and systems are provided for a multi-frequency transducer array. In one example, the transducer array may be fabricated via a wafer scale approach, where a first comb structure, with a first type of element, is formed by dicing a first acoustic stack and a second comb structure, with a second type of element, is formed by dicing a second acoustic stack. Combining the first and second comb structures may form a multi-frequency transducer array.

A laminated piezoelectric element 10 includes: a laminated body 11 in rectangle shape formed by alternately laminating a plurality of piezoelectric layers 15 and one or more internal electrode(s) 13; a connection electrode 14 connected to one end portion 13a of the internal electrode(s) 13; and an electric field relaxation region 16c or 16d formed discontinuously with regard to the internal electrode(s) 13 in at least one of two corner portions 13c and 13d of the other end portion 13b opposite to the one end portion 13a of the internal electrode(s) 13.

Provided is a lead-free piezoelectric material reduced in dielectric loss tangent, and achieving both a large piezoelectric constant and a large mechanical quality factor. A piezoelectric material according to at least one embodiment of the present disclosure is a piezoelectric material including a main component formed of a perovskite-type metal oxide represented by the general formula (1): Na.sub.x+s(1−y)(Bi.sub.wBa.sub.1−s−w).sub.1−yNb.sub.yTi.sub.1−yO.sub.3 (where 0.84≤x≤0.92, 0.84≤y≤0.92, 0.002≤(w+s)(1−y)≤0.035, and 0.9≤w/s≤1.1), and a Mn component, wherein the content of the Mn is 0.01 mol % or more and 1.00 mol % or less with respect to the perovskite-type metal oxide.

A deformation detection sensor is provided that includes a detection electrode, a first ground electrode, a piezoelectric film sandwiched between the detection electrode and the first ground electrode, a substrate on which the detection electrode and a second ground electrode are formed, a wiring connected to the detection electrode, and a joint member that joins the wiring and the detection electrode.

A thin-film transistor may include an amorphous semiconductor channel layer, an organic material piezoelectric stress gate layer formed adjacent to the amorphous semiconductor channel layer, a source electrode coupled to the organic material piezoelectric stress gate layer, a drain electrode coupled to the organic material piezoelectric stress gate layer and a gate electrode coupled to the organic material piezoelectric stress gate layer. In some embodiments, the amorphous semiconductor channel layer may be amorphous indium gallium zinc oxide. In some embodiments, the organic material piezoelectric stress gate layer may be organic polyvinylidene fluoride. In some embodiments, the amorphous semiconductor channel layer may be formed on a flexible substrate.

There is provided liquid discharging head having unit heads. Each of the unit heads includes: first piezoelectric layer, driving electrodes arranged on surface of the first piezoelectric layer and to each of which one of first and second potentials is to be applied, and common electrode. The common electrode includes: potential receiving part configured to receive one of the first and second potentials; and extending part extending in extending direction orthogonal to the first direction, so as to overlap with the driving electrodes in the first direction. The unit heads are arranged so that the common electrodes of the plurality of unit heads are adjacent to each other in second direction orthogonal to the first direction. The extending directions of two of the common electrodes adjacent to each other in the second direction are opposite to each other.

A curable organopolysiloxane composition is provided. The composition can be easily processed into a film shape and has a high specific dielectric constant, high dielectric breakdown strength, and a low Young's modulus, allowing for a high energy density to be achieved, in addition to having excellent mechanical strength when used as a dielectric layer in a transducer. A fluoroalkyl group-containing curable organopolysiloxane composition, which can be cured by an addition reaction, comprises: an organopolysiloxane containing an alkenyl group and a fluoroalkyl group; an organohydrogen polysiloxane having SiH at both terminals of a molecular chain but not having a fluoroalkyl group; and a linear fluoroalkyl group-containing organohydrogen polysiloxane or a branched fluoroalkyl group-containing organohydrogen polysiloxane having T units.

A piezoelectric actuator including an upper piezoelectric bimorph beam having a first upper piezoelectric layer, a second upper piezoelectric layer and at least three upper electrode layers extending between a first end and a second end of the upper piezoelectric bimorph beam; a lower piezoelectric bimorph beam having a first lower piezoelectric layer, a second lower piezoelectric layer and at least three lower electrode layers extending between a first end and a second end of the lower piezoelectric bimorph beam, and wherein the first end of the lower piezoelectric bimorph beam is coupled to the first end of the upper piezoelectric bimorph beam by a first joint, and the second end of the lower piezoelectric bimorph beam is coupled to second end of the upper piezoelectric bimorph beam; and a base member coupled to a center region of the lower piezoelectric bimorph beam.

A method for forming a MEMS device is provided. The method includes forming a stack of piezoelectric films and metal films on a base layer, wherein the piezoelectric films and the metal films are arranged in an alternating manner. The method also includes forming a first trench in the stack of the piezoelectric films and the metal films. The method further includes forming at least one void at the side wall of the first trench. In addition, the method includes forming a spacer structure in the at least one void. The method further includes forming a contact in the first trench after the formation of the spacer structure.