H01L41/187

LEAD-FREE PIEZOELECTRIC CERAMIC SENSOR MATERIAL AND A PREPARATION METHOD THEREOF

A lead-free piezoelectric ceramic sensor material and a preparation method thereof, and relates to the technical field of piezoelectric ceramic processing. The main raw materials of the lead-free piezoelectric ceramic sensor material disclosed in the present disclosure are a barium carbonate, a calcium carbonate, a zirconia, a titanium dioxide, a strontium carbonate, an oxidation bait, a bismuth oxide, a composite binder and a dispersant agent. The preparation method is prepared through the steps of preparing ingredients, ball milling, granulating and tableting, debinding, and sintering, and the lead-free piezoelectric ceramic sensor material can be made into a lead-free piezoelectric sensor through applying an electrode and electrode polarizing. The present disclosure has an excellent compactness and a good chemical stability. And the piezoelectric sensor made of the lead-free piezoelectric ceramic sensor material has a high sensitivity, a strong working stability, an excellent piezoelectric and has a high Curie temperature.

Ultrasound transducer and system

Some embodiments of the invention relate to an applicator for applying ultrasound energy to a tissue volume, comprising: an array comprising a plurality of ultrasound transducers, the transducers arranged side by side, the transducers configured to emit unfocused ultrasound energy suitable to thermally damage at least a portion of the tissue volume, each of the transducers comprising a coating thin enough so as not to substantially affect heat transfer via the coating to the tissue; and a cooling module configured to apply cooling via the transducers to prevent overheating of a surface of the tissue volume being contacted by the transducers.

Reusable piezoelectric sensor for damage identification
11476405 · 2022-10-18 · ·

A reusable piezoelectric sensor for damage identification includes a piezoelectric ceramic plate and a metal box bonded to the surface of a test piece, where a wire through hole is formed in the center of a top plate of the metal box, and a side wall of the metal box extends vertically upwards to form a striking face for being struck to remove the metal box from the test piece; the piezoelectric ceramic plate arranged in the metal box is closely and fixedly bonded to a bottom plate of the metal box; and wires of the piezoelectric ceramic plate penetrate through the wire through hole to be connected to an external impedance analyzer. The reusable piezoelectric sensor for damage identification is easy to manufacture and convenient to operate and can effectively eliminate the testing error caused by the difference of the piezoelectric ceramic plate.

Acoustic wave device including Li2CO3 layer on piezoelectric substrate made of LiNbO3 or LiTaO3

An acoustic wave device includes a piezoelectric substrate made of LiNbO.sub.3 or LiTaO.sub.3 and including first and second main surfaces that face each other, a functional electrode provided on the first main surface of the piezoelectric substrate to excite acoustic waves, and a Li.sub.2CO.sub.3 layer provided on the second main surface of the piezoelectric substrate.

Multilayer piezoelectric ceramic and method for manufacturing same, multilayer piezoelectric element, as well as piezoelectric vibration device

A multilayer piezoelectric ceramic is constituted by: piezoelectric ceramic layers which do not contain lead as a constituent element, have a perovskite compound expressed by the composition formula Li.sub.xNa.sub.yK.sub.1−x−yNbO.sub.3 (where 0.02<x≤0.1, 0.02<x+y≤1) as the primary component, and contain 0.2 to 3.0 mol of Li relative to 100 mol of the primary component; and internal electrode layers which are constituted by a metal that contains silver by 80 percent by mass or more; wherein the multilayer piezoelectric ceramic is such that Li compounds other than the primary component are localized therein. The multilayer piezoelectric element can offer excellent insulating property.

METHOD FOR THE PREPARATION OF A LEAD-FREE PIEZOELECTRIC MATERIAL AND PRECURSOR SOLUTION

The present disclosure relates to a method for the preparation of a precursor solution for a ceramic of the BZT-aBXT type wherein X is selected from Ca, Sn, Mn and Nb and a is a molar fraction selected in the range between 0.10 and 0.90 comprising the steps of: a) dissolving at least one barium precursor compound and at least one precursor compound selected from the group consisting of a calcium precursor compound, a tin precursor compound, a manganese precursor compound and a niobium precursor compound in a linear or branched anhydrous alkyl alcohol containing from 2 to 6 carbon atoms and, after dissolution, dehydrating by stripping, to obtain a first solution; b) dissolving at least one zirconium precursor compound and at least one titanium precursor compound in a linear or branched anhydrous alkyl alcohol containing from 2 to 6 carbon atoms in the presence of an anhydrous chelating agent to obtain a second solution; c) joining said first and second solutions in an anhydrous environment and dehydrating by stripping to obtain said precursor solution. It also relates to a precursor solution, to a method for the preparation of a film of a piezoelectric material, to a piezoelectric material and to an electronic device comprising this piezoelectric material.

Piezoelectric composition and piezoelectric element
11659769 · 2023-05-23 · ·

A piezoelectric composition including manganese and a complex oxide having a perovskite structure represented by a general formula ABO.sub.3, wherein an A site element in the ABO.sub.3 is potassium or potassium and sodium, a B site element in the ABO.sub.3 is niobium, a concentration distribution of the manganese has a variation, and the variation shows a CV value of 35% or more and 440% or less.

ELASTIC WAVE DEVICE
20170373667 · 2017-12-28 ·

An elastic wave device includes a piezoelectric substrate, IDT electrodes disposed on the piezoelectric substrate, a first wiring line, an insulating layer covering at least a portion of the first wiring line, a second wiring line at least a portion of which is disposed on the insulating layer to provide a three-dimensional crossing portion, a peripheral support including a cavity surrounding the IDT electrodes, the first and second wiring lines, and the insulating layer, a partition support disposed in the cavity, and a cover disposed on the peripheral support and the partition support to cover the cavity. The second wiring line includes a step portion electrically connecting a portion of the second wiring line located on the piezoelectric substrate and a portion of the second wiring line located on the insulating layer to each other. The partition support covers the step portion.

PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, LIQUID DISCHARGE APPARATUS, VIBRATION WAVE MOTOR, OPTICAL INSTRUMENT, VIBRATION APPARATUS, DUST REMOVING APPARATUS, IMAGING APPARATUS AND ELECTRONIC DEVICE

A piezoelectric material including a perovskite-type metal oxide represented by the following general formula (1); Bi; and Mn, wherein the content of Bi is 0.1-0.5 mol % with respect to 1 mol of the metal oxide, the content of Mn is 0.3-1.5 mol % with respect to 1 mol of the metal oxide, and the piezoelectric material satisfies (L.sub.4−L.sub.5)/L.sub.5≧0.05 and (L.sub.8−L.sub.9)/L.sub.9≧0.05 when the lengths of twelve Bi—O bonds with Bi that is located at a 12-fold site with respect to O in a perovskite-type unit cell as a starting point are taken to be L.sub.1 to L.sub.12 in length order:


(Ba.sub.1-xM1.sub.x)(Ti.sub.1-yM2.sub.y)O.sub.3  (1)

wherein 0≦x≦0.2, 0≦y≦0.1, and M1 and M2 are mutually different metal elements which have a total valence of +6 and are selected from other elements than Ba, Ti, Bi and Mn.

ELASTIC WAVE APPARATUS
20170373670 · 2017-12-28 ·

An elastic wave apparatus includes a piezoelectric substrate including a main surface and a polarization axis direction having a tilt angle with respect to the main surface, an IDT electrode provided on the main surface, and at least one line on the main surface and between an end edge of the main surface and the IDT electrode. A relationship a≦316|cos(θ)|μm is satisfied where a denotes a distance from the end edge of the main surface to the IDT electrode and b≧28 μm where a dimension of the line along a direction connecting the end edge to the IDT electrode is defined as a width, b denotes the width of the line when one line is provided, and b denotes the sum of the widths of multiple lines when the multiple lines are provided.