The present disclosure provides a hybrid heterojunction solar cell, a cell component, and a preparation method, the hybrid heterojunction solar cell comprises a semiconductor substrate having a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell; at least two composite layers located on one side of the substrate front surface, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface. The hybrid heterojunction solar cell, cell component and a preparation method provided by this disclosure can achieve a stable passivation effect on the cell surface, reduce light absorption in the non-metallic areas of the cell, and achieve better process control at the same time.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A P-type emitter region is disposed on the back surface of the substrate. An N-type emitter region is disposed in a trench formed in the back surface of the substrate. An N-type passivation layer is disposed on the N-type emitter region. A first conductive contact structure is electrically connected to the P-type emitter region. A second conductive contact structure is electrically connected to the N-type emitter region and is in direct contact with the N-type passivation layer.

The present disclosure discloses a semiconductor structure, a solar cell and a manufacturing method thereof, and a photovoltaic module. In an example, a solar cell includes a semiconductor substrate, a P-type doped polysilicon layer, and an N-type doped polysilicon layer. At least a portion of the N-type doped polysilicon layer is spaced apart from at least a portion of the P-type doped polysilicon layer. A ratio of a refractive index of the N-type doped polysilicon layer to a refractive index of the P-type doped polysilicon layer is greater than or equal to 0.9 and less than or equal to 1.1; or an absolute value of a difference between the refractive index of the P-type doped polysilicon layer and the refractive index of the N-type doped polysilicon layer is less than or equal to 0.1.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type layouts and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is on a first thin dielectric layer on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is on a second thin dielectric layer on the back surface of the substrate. The second polycrystalline silicon emitter region has a vertical thickness less than a vertical thickness of the first polycrystalline silicon emitter region.

Provided is a solar cell. The solar cell includes a silicon substrate, a P-type doping structure located on the back surface of the silicon substrate, an N-type doping structure located on the back surface of the silicon substrate, a spacing region located between the P-type doping structure and the N-type doping structure, a first electrode located on a back surface of the P-type doping structure, and a second electrode located on a back surface of the N-type doping structure. In a first direction, the back surface of the P-type doping structure is higher than the back surface of the N-type doping structure, and the first direction is from a front surface of the silicon substrate to the back surface of the silicon substrate. With the solar cell of the present disclosure, more carriers can be generated and successfully collected, improving a cell efficiency.

A solar cell and a photovoltaic module are provided. The solar cell includes a substrate provided with a first face and a second face, at least one of which is a side of the substrate. On shared prismatic edges and/or shared corners where the first surface and the second surface are adjacent, the substrate is also provided with a multiple-pyramid shared body having a shared face. When viewed in the direction towards the first surface, the multiple-pyramid shared body includes a first pyramid structure formed by enclosing several first triangular surfaces and several third triangular surfaces. When viewed in the direction towards the second surface, the multiple-pyramid shared body includes a second pyramid structure formed by enclosing several second triangular surfaces and several third triangular surfaces.

A solar cell and a photovoltaic module are provided. The solar cell includes a substrate provided with a first face and a second face, at least one of which is a side of the substrate. On shared prismatic edges and/or shared corners where the first surface and the second surface are adjacent, the substrate is also provided with a multiple-pyramid shared body having a shared face. When viewed in the direction towards the first surface, the multiple-pyramid shared body includes a first pyramid structure formed by enclosing several first triangular surfaces and several third triangular surfaces. When viewed in the direction towards the second surface, the multiple-pyramid shared body includes a second pyramid structure formed by enclosing several second triangular surfaces and several third triangular surfaces.

The present disclosure provides a solar cell and a photovoltaic module, and relates to the field of solar cell technologies. In an implementation, the solar cell includes a semiconductor substrate, a tunnel oxide layer located on at least one surface of the semiconductor substrate, and a doped polysilicon layer located on a surface of the tunnel oxide layer away from the semiconductor substrate. At least part of a surface of the doped polysilicon layer away from the tunnel oxide layer is provided with silicon-containing protrusion particles. The photovoltaic module provided in the present application includes the solar cell.

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

The present disclosure is applicable to the technical field of solar cells, and provides a passivated contact structure, a solar cell, a module, and a system. The passivated contact structure of a solar cell includes: a silicon substrate; and a first silicon oxide layer, a doped layer, a second silicon dioxide layer and a passivation layer, which are sequentially disposed on the silicon substrate, wherein a local region of the first silicon oxide layer includes a thinned region, and the proportion of a silicon oxide content in the first silicon oxide layer is reduced in the thinned region. Thus, the thinning of the local region of the first silicon oxide layer allows H to quickly pass through, so that a H passivation effect can be effectively improved, and the heat treatment control difficulty is reduced.