Disclosed is a method of manufacturing a III-V group nanorod solar cell so that a substrate can be reused. The method may includes a first growth process of forming an etch stop layer on a substrate, a second growth process of growing a sacrificial layer on the etch stop layer, a third growth process of forming, on the sacrificial layer, a pattern layer including an opening at each location at which each nanorod solar cell is able to be grown, a fourth growth process of growing the nanorod solar cells on the sacrificial layer through the openings within the pattern layer, a forming process of forming a solar cell protection layer on outsides of the nanorod solar cells, a first etching process of etching the sacrificial layer and the pattern layer, and a second etching process of etching the etch stop layer.

Preparation of two-dimensional indium selenide, other two-dimensional materials and related compositions via surfactant-free deoxygenated co-solvent systems.

The photodetector device generally has a semiconductor substrate; a plurality of nanowires extending from the semiconductor substrate, the nanowires having a first section of a first semiconductor material extending from the semiconductor substrate, a tunnel junction extending from the first section, and a second section of a second semiconductor material extending from the tunnel junction, the first semiconductor material having a first bandgap energy different from a second bandgap energy of the second semiconductor material; an electrode longitudinally spaced apart from the second sections, and forming a gap therebetween; an electrolyte solution within the gap and surrounding the nanowires; and a current detector having a first terminal electrically connected to the semiconductor substrate and a second terminal electrically connected to the electrode.

A composition of matter comprising: a plurality of group III-V nanowires or nanopyramids epitaxially grown on a polycrystalline or single-crystalline graphene layer, said graphene layer being directly supported on a crystalline substrate such as a group III-V semiconductor, sapphire, SiC or diamond substrate, wherein the epitaxy, crystal orientation and facet orientations of said nanowires or nanopyramids are directed by the crystalline substrate.

A photovoltaic system comprises a photovoltaic cell, a substrate, and a light-conversion layer. The photovoltaic cell converts incident light into electricity and is responsive to a range of frequencies of incident light that is less than all frequencies of the incident light. The substrate is disposed between the photovoltaic cell and the incident light so that the incident light passes through the substrate to illuminate the photovoltaic cell. The light-conversion layer is disposed on the substrate so that incident light illuminates the light-conversion layer and the light-conversion layer converts a broad frequency band of incident light outside the range to light within the range and is emitted toward the photovoltaic cell to illuminate the photovoltaic cell with converted light.

A photonic integrated circuit including a substrate, a plurality of oxide layers on the substrate, and various passive and active integrated optical components in the plurality of oxide layers. The integrated optical components include silicon nitride waveguides, a Pockets effect phase shifter (e.g., BaTiO.sub.3 phase shifter), a superconductive nanowire single photon detector (SNSPD), an optical isolation structure surrounding the SNSPD, a single photon generator, a thermal isolation structure, a heater, a temperature sensor, a photodiode for data communication (e.g., a Ge photodiode), or a combination thereof.

The presently disclosed subject matter relates generally to GaAsSb NWs (NW) grown on a graphitic substrate, to methods of growing such NWs, and to use of such NWs in applications such as flexible near infrared photodetector.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

The present invention provides an electronic device having a quantum photonic integrated circuit (QuPIC) including a photonsource, a photon detector and an optical waveguide configured for guiding the photons from the source to the detector.

A photonic integrated circuit including a substrate, a plurality of oxide layers on the substrate, and various passive and active integrated optical components in the plurality of oxide layers. The integrated optical components include silicon nitride waveguides, a Pockels effect phase shifter (e.g., BaTiO.sub.3 phase shifter), a superconductive nanowire single photon detector (SNSPD), an optical isolation structure surrounding the SNSPD, a single photon generator, a thermal isolation structure, a heater, a temperature sensor, a photodiode for data communication (e.g., a Ge photodiode), or a combination thereof.