A structure for packaging a crystal oscillator includes a package base, at least one glue, a resonant crystal blank, and a top cover. The top of the package base has a recess. The glue is formed in the recess. The resonant crystal blank has at least one opening, at least one border area, at least one connection area, and a resonant area. The opening is arranged between the border area and the resonant area. The border area is connected to the resonant area through the connection area. The border area is formed in the recess through the glue. The top cover is formed on the top of the package base. The top cover closes the recess, the at least one glue, and the resonant crystal blank.

An apparatus includes a vibration member and a first cover disposed at a rear surface of the vibration member. The apparatus also includes a first vibration apparatus disposed at a rear surface of the first cover and configured to vibrate the vibration member. The apparatus includes a first enclosure member disposed at the rear surface of the first cover and at the rear surface of the vibration member. The apparatus also includes a first rear vibration member disposed at the first enclosure member.

Provided is an electronic device in which penetrating wires can be formed easily. The electronic device includes a sealing plate 33 having a first surface 41 to which a pressure chamber-forming plate 29 is connected and a second surface 42 which is on a side opposite from the first surface 41 and on which a drive IC 34 is provided; bump electrodes 40 which are arranged in a nozzle row direction on the first surface 41 of the sealing plate 33 and which output signals to piezoelectric elements 32; individual connection terminals 54 which are arranged in the nozzle row direction on the second surface 42 of the sealing plate 33 and to which the signals are inputted, wherein wires each of which connects one of the bump electrodes 40 to one of the individual connection terminals 54 corresponding to the bump electrode 40 each include a penetrating wire 45 formed inside a through hole 45a penetrating the sealing plate 33 and made of a conductor, the penetrating wires 45 are formed at positions away from the bump electrodes 40 or the individual connection terminals 54 in a direction perpendicular to the nozzle row direction, and each two of the penetrating wires 45 adjacent in the nozzle row direction are arranged at different positions in the direction perpendicular to the nozzle row direction.

Piezoelectric transducers are provided. The piezoelectric transducer includes a first piezoelectric layer, a second piezoelectric layer disposed on at least a portion of the first piezoelectric layer, and a middle electrode layer disposed between the first and second piezoelectric layers, where the middle electrode layer includes an inner region and an outer region spaced apart from the inner region. Methods of making the piezoelectric transducers are also provided. The piezoelectric transducers and methods find use in a variety of applications, including devices, such as electronics devices having one or more (e.g., an array) of the piezoelectric transducers.

Provided are a polymer composite piezoelectric body in which the conversion efficiency between electricity and sound is increased and thus the sound pressure level is improved, an electroacoustic transduction film, and an electroacoustic transducer. The polymer composite piezoelectric body includes a viscoelastic matrix formed of a polymer material having a cyanoethyl group, piezoelectric body particles which are dispersed in the viscoelastic matrix and have an average particle diameter of more than or equal to 2.5 μm, and dielectric particles dispersed in the viscoelastic matrix, in which the dielectric particles are formed of a material different from that of the piezoelectric body particles and have an average particle diameter of less than or equal to 0.5 μm and a relative permittivity of more than or equal to 80.

An end-surface-reflection surface acoustic wave device, which reflects a surface acoustic wave between first and second end surfaces facing each other, includes a support substrate, an intermediate layer, a piezoelectric layer, and an IDT electrode. The first end surface is located at one end portion in a surface-acoustic-wave propagation direction and extends from a main surface of the piezoelectric layer to at least a portion of the intermediate layer. The second end surface is located at the other end portion in the surface-acoustic-wave propagation direction and extends from the main surface of the piezoelectric layer to at least a portion of the intermediate layer. The support substrate includes support substrate portions that are located outside the first and second end surfaces in the surface-acoustic-wave propagation direction.

A piezoelectric material including a perovskite-type metal oxide represented by the following general formula (1); Bi; and Mn, wherein the content of Bi is 0.1-0.5 mol % with respect to 1 mol of the metal oxide, the content of Mn is 0.3-1.5 mol % with respect to 1 mol of the metal oxide, and the piezoelectric material satisfies (L.sub.4−L.sub.5)/L.sub.5≧0.05 and (L.sub.8−L.sub.9)/L.sub.9≧0.05 when the lengths of twelve Bi—O bonds with Bi that is located at a 12-fold site with respect to O in a perovskite-type unit cell as a starting point are taken to be L.sub.1 to L.sub.12 in length order:

(Ba.sub.1-xM1.sub.x)(Ti.sub.1-yM2.sub.y)O.sub.3  (1)

wherein 0≦x≦0.2, 0≦y≦0.1, and M1 and M2 are mutually different metal elements which have a total valence of +6 and are selected from other elements than Ba, Ti, Bi and Mn.

A quartz crystal microbalance (QCM) sensor includes a crystal plate, a buffer layer, and an electrode. The crystal plate has a first surface and a second surface. The second surface is opposite the first surface. The buffer layer includes a first buffer layer and a second buffer layer. The first buffer layer is disposed on the first surface of the crystal plate. the second buffer layer is disposed on the second surface of the crystal plate. The electrode includes a first electrode and a second electrode. The first electrode is disposed on the first buffer layer. The second electrode is disposed on the second buffer layer. The electrode includes at least one of titanium, scandium, beryllium, cobalt, yttrium, zirconium, technetium, ruthenium, lanthanum, cerium, praseodymium, neodymium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, lutetium, hafnium, rhenium, osmium, americium, curium, berkelium, and californium.

In a surface acoustic wave filter, a parallel arm resonator includes an IDT electrode and reflectors. Comb-shaped electrodes of the IDT electrode each include a busbar electrode and electrode fingers connected thereto, and are arranged so that the electrode fingers of the respective comb-shaped electrodes are alternately located in a propagation direction of a surface acoustic wave. The reflectors are provided on both sides of the IDT electrode portion in the propagation direction of the surface acoustic wave so that reflector electrode fingers are parallel or substantially parallel to the electrode fingers. A distance between the electrode finger and the reflector electrode finger which are proximate to each other is about 10% or more and about 20% or less of a main pitch of the electrode fingers.

A crystal resonator includes: lower glass plates on which first electrodes are formed so as to extend from side surfaces to a bottom surface of the lower glass plates; a crystal plate which is provided over the lower glass plates and on which second electrodes to be coupled to the first electrodes are formed on a surface in contact with the lower glass plates; and an upper glass plate which is provided over the crystal plate; wherein the side surfaces of the lower glass plates on which the first electrodes are formed are provided with a protrusion that extends in parallel with a top surface and the bottom surface of the lower glass plates and that extends from one end to the other end of each of the side surfaces, and wherein the first electrodes are formed on the side surfaces that include surfaces of the protrusion.