A manufacturing method of an epitaxial thin film piezoelectric element includes: providing a substrate; forming a bottom electrode layer on the substrate by epitaxial growth process; forming a first piezoelectric layer that has c-axis orientation on the bottom electrode layer by epitaxial growth process; forming a second piezoelectric layer that has c-axis orientation and different phase structure from the first piezoelectric layer on the first piezoelectric layer by epitaxial growth process; and forming a top electrode layer on the second piezoelectric layer. The thin film piezoelectric element has good thermal stability, low temperature coefficient and high piezoelectric constant.

An electrical component includes a main body, a metallic contact structure, which is in direct contact with the main body, and an electrically insulating passivation layer provided with an opening. The metallic contact structure is connected to an external contact-making element through the opening. Furthermore, the external contact-making element is covered and enclosed by a flexible metal composite layer. A method for producing an electrical component is also specified.

The present disclosure provides a fingerprint recognition module, a driving method thereof, a manufacturing method thereof, and a display device. The fingerprint recognition module includes a receiving electrode layer, a piezoelectric material layer, and a driving electrode layer. The receiving electrode layer includes a plurality of receiving electrodes arranged in an array along a first direction and a second direction. The piezoelectric material layer is disposed on a side of the receiving electrode layer. The driving electrode layer is disposed on a side of the piezoelectric material layer remote from the receiving electrode layer and includes a plurality of driving electrodes arranged along the second direction. Each driving electrode is a strip electrode extending along the first direction, and overlaps with multiple receiving electrodes arranged along the first direction.

A piezoelectric actuator is provided which acts as a micromechanical actuating element. Thus, the piezoelectric actuator has a piezoelectric element and an electrode structure, wherein said electrode structure is arranged with the electrodes thereof exclusively on one side of the piezoelectric element. Furthermore, the piezoelectric actuator has at least one attachment element, wherein the attachment element is fitted on the piezoelectric element and on the side of the electrode structure of the piezoelectric element, and the attachment element at least partially encompasses the electrode structure of the piezoelectric actuator. The attachment element in the process, by virtue of encompassing the electrode structure, provides a physical limit for the expansion of the piezoelectric element.

A method for producing a piezoelectric stack actuator and a piezoelectric stack actuator are disclosed. To increase service life of a piezoelectric stack actuator made up of individual actuators, includes providing at least two actuators the method and designed and configured to generate a deflection along an axis (A) when electrically activated; and coupling the at least two actuators to form the stack actuator such that deflections of the actuators generated when the actuators are electrically activated are overlaid along a stacking axis (S) and there is a force-coupling of the actuators over at least one coupling area (K) that is smaller than a projection area (P) of the actuator onto a plane (E) perpendicular to the stacking axis.

A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than a rhombohedral crystal in a single composition, has a Curie temperature Tc2 higher than Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc3 equal to or higher than Tc2, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the first component. When a molar ratio of the third component to the sum of the first component and the third component is α and α×Tc3+(1−α)×Tc1 is Tc4, |Tc4−Tc2| is 50° C. or lower.

A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second resonator. The first resonator has terminals for incorporation in a filter structure. A tuning circuit is coupled to the second resonator to enable tuning of the resonator element.

A surface acoustic wave (SAW) device includes: a base substrate; a piezo-electric material layer; at least one interdigitated electrode pair disposed on the piezo-electric material layer; and an acoustic wave suppression layer disposed between the piezo-electric material layer and the base substrate, the acoustic wave suppression layer being configured to suppress an acoustic wave propagating in a direction from the piezo-electric material layer to the base substrate.

In an elastic wave filter device, a first filter including a first pass band and a second filter including a second pass band are common-connected at a common connection point. The first filter includes, on the common connection point side, a serial arm resonator, a parallel arm resonator, or a longitudinally coupled resonator-type elastic wave filter, and generates a fundamental wave and a high-order mode. A resonant frequency of the high-order mode on a higher frequency side relative to the first pass band of the first filter is smaller than the second pass band. On the common connection point side, a serial arm resonator in which the resonant frequency is not the highest, a parallel arm resonator, or a longitudinally coupled resonator-type elastic wave filter, is disposed.

A circuit module includes a mounting substrate including a conductor wiring, an elastic wave element provided in or on a main surface of the mounting substrate, an electric element provided in or on the main surface, the electric element being different from the elastic wave element, and an insulating resin portion provided in or on the main surface to cover the elastic wave element and the electric element. The elastic wave element and the electric element are connected to each other by the conductor wiring. A height of the elastic wave element is about 0.28 mm or less, which is less than that of the electric element. The thickness of the resin portion in a region in which the resin portion covers the elastic wave element is greater than the thickness of the resin portion in a region in which the resin portion covers the electric element.