Patent classifications
H01L41/047
Multilayer piezoelectric element
The present disclosure relates to a multilayer piezoelectric element which includes a plurality of piezoelectric layers with a thickness of 15 μm to 100 μm each; and internal electrodes interposed between the plurality of piezoelectric layers and laminated to alternately form an anode and a cathode.
One up, one down connection structure for piezoelectric device in tire patch
A conductive terminal structure for a piezoelectric device used as part of a tire mountable apparatus is provided. Unlike known electrical connection structures which include a plurality of conductive terminals that are all exposed through a single insulating layer of the piezoelectric device, such as a top layer of the piezoelectric device, the electrical connection structure can be arranged in a one up, one down configuration. In this configuration, at least one conductive terminal is exposed through a top insulating layer of the piezoelectric device. In addition, at least one conductive terminal of a piezoelectric component is exposed through a bottom insulating layer of the piezoelectric device. The electrical connection structure can be used in combination with a connector assembly design to preserve the integrity of the electrical connection between the electrical and mechanical connection structure and a printed circuit board.
Vibrator Device
A vibrator device includes a package including a base that is a semiconductor substrate and a lid that is a semiconductor substrate and has a housing section, a vibrator element and a passive element housed in the housing section and placed at the base, an oscillation circuit placed at the base and electrically coupled to the vibrator element, and a circuit that is placed at the base or the lid, is electrically coupled to the passive element, and operates based on an oscillation signal from the oscillation circuit.
DUAL LAYER ULTRASONIC TRANSDUCER FABRICATION PROCESS
An array of piezoelectric micromachined ultrasonic transducers (PMUTs) includes a first piezoelectric layer and a second piezoelectric layer, a dielectric layer positioned between the first piezoelectric layer and the second piezoelectric layer, and a plurality of conductive layers positioned on opposing surfaces of the first piezoelectric layer and opposing surfaces of the second piezoelectric layer. A plurality of isolation trenches extend through the dielectric layer and at least a portion of conductive layers of the plurality of conductive layers, where the plurality of isolation trenches are positioned between neighboring PMUTs of the array of PMUTs such that the neighboring PMUTs are electrically isolated, and wherein the plurality of isolation trenches relieve stress in the dielectric layer.
SURFACE ACOUSTIC WAVE DEVICE AND DUPLEXER HAVING TRANSMISSION/RECEPTION FILTER USING SAME
A surface acoustic wave device includes a piezoelectric substrate and an IDT electrode on the piezoelectric substrate. The IDT electrode includes a main electrode layer and a barrier layer between the piezoelectric substrate and the main electrode layer. The main electrode layer is inside a region in which the barrier layer is provided in plan view to suppress diffusion between the piezoelectric substrate and the main electrode layer when a voltage is applied to the IDT electrode.
Elastic wave element with interdigital transducer electrode
An elastic wave device includes an interdigital transducer (IDT) electrode in contact with a piezoelectric substrate having a bus bar electrode region including one of a first bus bar electrode and a second bus bar electrode of the IDT electrode, an alternately disposed region where first electrode fingers are alternately disposed with second electrode fingers of the IDT electrode, and an intermediate region including one of the first electrode fingers and the second electrode fingers. A dielectric film is formed in at least part of the intermediate region and in contact with an upper surface of the IDT electrode. The dielectric film includes a medium in which an acoustic velocity of a transverse wave propagating in the dielectric film is lower than an acoustic velocity of a main elastic wave of the alternately disposed region. The dielectric film is not formed in the alternately disposed region.
Elastic wave device
In an elastic wave device, an IDT electrode is disposed on a piezoelectric substrate and includes a close contact layer, which includes first and second main surfaces and side surfaces. The first main surface is in contact with the piezoelectric substrate, and at least two electrode layers are disposed on the close contact layer. The at least two electrode layers include a first electrode layer and a second electrode layer. The first electrode layer is made of a material that has a higher density than that of Al. The second electrode layer has a lower density than the first electrode layer. One of the at least two electrode layers has higher weather resistance than the close contact layer and covers the side surfaces of the close contact layer.
Actuator device
Actuator device has a main body with base and superstructure bodies, the device having a plurality of actuators formed from a piezoelectric or electrostrictive material and each extend from the base body and form the superstructure body. The actuators each have at least two inner actuating electrodes of which at least one first inner actuating electrode extends, in a positive depthwise direction from the front side up to a distance from the rear side, and of which at least one second inner actuating electrode extends in a negative depthwise direction from the rear side up to a distance from the front side. At least one first inner actuating electrode of each actuator is provided for electrical connection to a first connection pole of an actuating device, a rear-side layer which is formed from electrically conductive material arranged on the rear side of the actuator device.
Resonator element, resonator, electronic device, electronic apparatus, and moving object
A resonator element includes a vibrating portion that vibrates in a thickness shear vibration and includes a first main surface and a second main surface which are in a front and back relationship to each other, a first excitation electrode that is provided on the first main surface, and a second excitation electrode that is provided on the second main surface, and an energy trapping coefficient M satisfies a relationship of 33.6≦M≦65.1.
Method of manufacturing zinc oxide nanosheet structure, and electronic apparatus and touch sensor apparatus having the zinc oxide nanosheet structure
Disclosed herein is a method of manufacturing a zinc oxide nanosheet structure. The zinc oxide nanosheet structure may be manufactured by forming a zinc oxide seed on a substrate and growing zinc oxide from the zinc oxide seed in a zinc oxide growth solution in which zinc precursors and a doping-element-containing compound are dissolved.