One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and tantalum nitride terminated through wafer via. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. A metal layer in the tantalum nitride terminated through wafer via is included in an electrical connection between the power amplifier on a front side of a substrate and a conductive layer on a back side of the substrate. Other embodiments of the module are provided along with related methods and components thereof.

This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.

One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.

One aspect of this disclosure is a power amplifier module that includes a power amplifier; a wire bond pad electrically connected to the power amplifier, the wire bond pad including a nickel layer having a thickness that is less than 0.5 um, a palladium layer over the nickel layer, and a gold layer over the palladium layer; and a conductive trace having a top surface with a plated portion and an unplated portion surrounding the plated portion, the wire bond pad being disposed over the plated portion. Other embodiments of the module are provided along with related methods and components thereof.

Device structures, fabrication methods, and design structures for a bipolar junction transistor. A trench isolation region is formed in a substrate. The trench isolation region is coextensive with a collector in the substrate. A base layer is formed on the collector and on a first portion of the trench isolation region. A dielectric layer is formed on the base layer and on a second portion of the trench isolation region peripheral to the base layer. After the dielectric layer is formed, the trench isolation region is at least partially removed to define an air gap beneath the dielectric layer and the base layer.

A bipolar transistor and a method of making a bipolar transistor. The method includes providing a semiconductor substrate having a major surface, one or more layers located beneath the major surface for forming an intrinsic base, and a collector. The method also includes depositing a first oxide layer on the major surface, depositing a second oxide layer on the first oxide layer, and depositing an extrinsic base layer on the second oxide layer. The method further includes forming an emitter window through the extrinsic base layer. The method also includes removing at least a part of the second oxide layer to form a first cavity and forming an initial part of a base link region in the first cavity. The method also includes removing at least a part of the first oxide layer to form a second cavity and filling the second cavity to form a completed base link region.

A bipolar junction transistor has a collector over a substrate, a base over the collector, and an emitter over the base. The base includes a III-V ternary semiconductor alloy including first, second, and third elements, and having a narrower bandgap than a binary semiconductor alloy including only the first and second elements. At least a portion of the base has a differential concentration of the third element such that a concentration of the third element at a first location in the base is greater than at a second location in the base, the second location between the first location and the collector.

A bipolar junction transistor a base over a collector, the base including a III-V ternary semiconductor alloy including first, second, and third elements. The LI-V ternary semiconductor alloy has a narrower bandgap than a binary semiconductor alloy including only the first and second elements. A ledge between an emitter and a base contact being 0.5 m or less.

A bipolar junction transistor has a collector over a substrate and a base structure over the collector, the base including a III-V ternary semiconductor alloy, the base having a base contact formed thereon. An emitter is over the base structure, and a ledge between the emitter structure and the base contact is 0.3 m or less.

A bipolar junction transistor has a collector over a substrate and a multi-layer base structure over the collector, and an emitter over the base structure. The multi-layer base structure includes a first layer having a first III-V semiconductor alloy and a second layer having a second III-V semiconductor alloy having a different composition of elements than the first III-V semiconductor alloy. The second layer has a narrower bandgap than the first layer. The first layer is positioned between the collector and the second layer.