An apparatus, system, and method for the manufacturing of an inductor using deep trench isolation (DTI) is disclosed. The apparatus may include a doped substrate forming a well. The apparatus may also include a trench etched in the substrate. The trench may have a shape of a coil. The apparatus may additionally include a dielectric in the trench. The apparatus may further include a conductor within the dielectric in the trench. The dielectric and the conductor may create a first inductor.

An apparatus, system, and method for the manufacturing of a varactor using deep trench isolation (DTI) is disclosed. The apparatus may include a substrate doped to form a well. The apparatus may also include a first trench etched in the substrate. The apparatus may additionally include a second trench etched in the substrate parallel to the first trench. The apparatus may further include a dielectric in the first trench and the second trench and a conductor within the dielectric in the first trench and the second trench. The substrate may form a bottom electrode of a first varactor and a second varactor. The conductor in the first trench may form a top electrode of the first varactor. The conductor in the second trench may form a top electrode of the second varactor.

An apparatus, system, and method for the manufacturing of a varactor using deep trench isolation (DTI) is disclosed. The apparatus may include a substrate doped to form a well. The apparatus may also include a first trench etched in the substrate. The apparatus may additionally include a second trench etched in the substrate parallel to the first trench. The apparatus may further include a dielectric in the first trench and the second trench and a conductor within the dielectric in the first trench and the second trench. The substrate may form a bottom electrode of a first varactor and a second varactor. The conductor in the first trench may form a top electrode of the first varactor. The conductor in the second trench may form a top electrode of the second varactor.

An apparatus, system, and method for the manufacturing of an inductor having a high quality factor using deep trench isolation (DTI) is disclosed. The apparatus may include a substrate doped to form a well. The apparatus may also include an inductor coil above a surface of the substrate. The apparatus may further include a trench etched in the substrate, a dielectric in the trench, and a conductor within the dielectric in the trench. The conductor may be biased to create a depletion region below the inductor coil.

Aspects provide a device comprising: a substrate doped to form a first well; a first deep trench etched in the substrate; a dielectric in the first deep trench; a first conductor within the dielectric in the first deep trench and biased to create a first depletion region in the substrate proximate the first deep trench, wherein the substrate forms a bottom electrode of a first deep trench isolation varactor and the conductor in the first deep trench forms a top electrode of the first deep trench isolation varactor; a sense electrode operable to become electrically charged when interacting with an ionized fluid, wherein the sense electrode is operable to electrically charge the first deep trench isolation varactor; and a fluid property measurement circuit operable to determine a change in the capacitance of the first deep trench isolation varactor and output a fluid property signal.

Aspects provide a device comprising: a substrate doped to form a first well; a first deep trench etched in the substrate; a dielectric in the first deep trench; a first conductor within the dielectric in the first deep trench and biased to create a first depletion region in the substrate proximate the first deep trench, wherein the substrate forms a bottom electrode of a first deep trench isolation varactor and the conductor in the first deep trench forms a top electrode of the first deep trench isolation varactor; a sense electrode operable to become electrically charged when interacting with an ionized fluid, wherein the sense electrode is operable to electrically charge the first deep trench isolation varactor; and a fluid property measurement circuit operable to determine a change in the capacitance of the first deep trench isolation varactor and output a fluid property signal.

Inductors and biased deep trench isolation (DTI) varactors may detect the type and concentration of ions in a fluid. An ion sensing device comprises: a deep trench isolation varactor in a substrate having a dielectric and a conductor and biased to create a depletion region in the substrate proximate the deep trench; a sense electrode operable to become electrically charged when interacting with an ionized fluid, wherein the sense electrode is operable to electrically charge the deep trench isolation varactor; an inductor proximate the deep trench isolation varactor and configured so that a change of a characteristic of the deep trench isolation varactor induces a change in the quality factor of the inductor; and a fluid property measurement circuit operable to determine a change in the quality factor of the inductor and output a fluid property signal.

Inductors and biased deep trench isolation (DTI) varactors may detect the type and concentration of ions in a fluid. An ion sensing device comprises: a deep trench isolation varactor in a substrate having a dielectric and a conductor and biased to create a depletion region in the substrate proximate the deep trench; a sense electrode operable to become electrically charged when interacting with an ionized fluid, wherein the sense electrode is operable to electrically charge the deep trench isolation varactor; an inductor proximate the deep trench isolation varactor and configured so that a change of a characteristic of the deep trench isolation varactor induces a change in the quality factor of the inductor; and a fluid property measurement circuit operable to determine a change in the quality factor of the inductor and output a fluid property signal.

This disclosure provides a communication device and a manufacturing method thereof. The manufacturing method of the communication device includes the following steps: providing a first dielectric layer, wherein the first dielectric layer includes a first region and a second region, and the first dielectric layer has a first surface and a second surface opposite to the first surface; providing a second dielectric layer; combining the first dielectric layer and the second dielectric layer with a sealing element, so that the sealing element is disposed between the first surface of the first dielectric layer and a third surface of the second dielectric layer; after combining the first dielectric layer and the second dielectric layer, thinning the second surface of the first dielectric layer; and disposing a first communication element on the first surface of the first dielectric layer in the first region.

This disclosure provides a communication device and a manufacturing method thereof. The manufacturing method of the communication device includes the following steps: providing a first dielectric layer, wherein the first dielectric layer includes a first region and a second region, and the first dielectric layer has a first surface and a second surface opposite to the first surface; providing a second dielectric layer; combining the first dielectric layer and the second dielectric layer with a sealing element, so that the sealing element is disposed between the first surface of the first dielectric layer and a third surface of the second dielectric layer; after combining the first dielectric layer and the second dielectric layer, thinning the second surface of the first dielectric layer; and disposing a first communication element on the first surface of the first dielectric layer in the first region.