A device and methods of forming the same are described. The device includes a substrate and a first bipolar junction transistor (BJT) disposed over the substrate. The first BJT includes a first base region, a first emitter region, and a first collector region. The device further includes a second BJT disposed over the substrate adjacent the first BJT, and the second BJT includes a second base region, a second emitter region, and a second collector region. The device further includes an interconnect structure disposed over the first and second BJTs, and the interconnect structure includes a first conductive line electrically connected to the first emitter region and the second base region and a second conductive line electrically connected to the first collector region and the second collector region.

Provided is a semiconductor device including a drift region, a base region, two trench portions and a mesa portion, wherein at least one of the two trench portions is a gate trench portion, the mesa portion includes: a first conductivity type emitter region provided to be exposed on an upper surface of the mesa portion; a second conductivity type contact region provided to be exposed on the upper surface of the mesa portion alternately with the emitter region in an extending direction; and a second conductivity type connecting region with a higher doping concentration than the base region, wherein the connecting region is provided to overlap with the emitter region in a top view, is arranged apart from the gate trench portion, is arranged below the upper surface of the mesa portion, and connects two of the contact regions sandwiching the emitter region in the extending direction.

An electrostatic discharge semiconductor device is disclosed and comprises: a first well region of a first doping type, extending from the surface of an epitaxial layer to the surface of the substrate; a second well region and a third well region of a second doping type; a fourth well region of the second doping type; a fifth well region and a sixth well region have a first doping type; a first injection region and a second injection region, spaced apart in each well region. The second injection region in the second and third well regions is connected to a cathode, and the first and second injection regions in the fourth well region are connected to an anode. The electrostatic discharge semiconductor device enhances its electrostatic protection capability by adjusting the avalanche breakdown voltage between the floating fifth and sixth well regions and the triggering voltage of the device.

An electrostatic discharge semiconductor device and a manufacturing method thereof are disclosed. The electrostatic discharge semiconductor device includes: a substrate, an epitaxial layer and a first well region; a second well region and a third well region located on sides of the first well region respectively; a fourth well region extending in the first well region; fifth and sixth well regions on sides of the fourth well region; a first injection region and a second injection region. The second injection region in the second well region and third well region, and the first injection region in the fifth well region and sixth well region are connected to a cathode, and all injection regions in the fourth well region are connected to an anode, to form a lateral triode current discharge path, which increases the holding voltage and adjusts the avalanche breakdown voltage and trigger voltage, and enhances electrostatic protection capability.

A sensor device includes a vertically stacked cascode bipolar junction transistor pair, and a first trench having a first sidewall, wherein a portion of the first sidewall is provided by the first sensing surface, wherein a bipolar junction transistor and a dual-base bipolar junction transistor of the cascode bipolar junction transistor pair are stacked vertically along the first trench.

Integrated circuit devices including a bipolar junction transistor (BJT) and/or a P-N junction diode are provided. The integrated circuit devices may include a first stack including first and second semiconductor regions that are spaced apart from each other in a horizontal direction and have a first conductivity type and a plurality of nano-semiconductor layers that are stacked in a vertical direction and are between the first and second semiconductor regions. The plurality of nano-semiconductor layers each have a second conductivity type, and the first semiconductor region may include a side surface facing the plurality of nano-semiconductor layers. The integrated circuit device may also include a vertical semiconductor layer having the second conductivity type and a conductive contact that contacts the plurality of nano-semiconductor layers. The vertical semiconductor layer may contact the side surface of the first semiconductor region and the plurality of nano-semiconductor layers.

A built-in resistor electrically connecting a trench gate electrode and a gate pad is formed of a conductive film formed on a semiconductor substrate via an insulating film. Here, a film thickness of the insulating film is larger than a film thickness of an insulating film in a trench and is smaller than an insulating film which is a field oxide film.

A semiconductor device includes a diode section. At least some of a plurality of diode mesas in the diode section are coupled to the drift region via a second anode region electrically connected to the emitter terminal of the semiconductor device. The second anode region extends deeper along the vertical direction as compared to trenches in the diode section.

An insulated gate bipolar transistor includes: a gate trench extending in a predetermined extension direction in a plan view; a gate insulating film provided on a bottom surface and at least a part of side surfaces of the gate trench; a bottom gate conductive member embedded in the gate trench via the gate insulating film; a first split insulating film provided on the bottom gate conductive member; an upper gate conductive member embedded in the gate trench via the first split insulating film; a gate surface electrode overlapping one end of the gate trench in the extension direction; a first contact hole that electrically connects the gate surface electrode and the bottom gate conductive member; and a second contact hole that electrically connects the gate surface electrode and the upper gate conductive member.

Provided is a semiconductor device having transistor and diode sections. The semiconductor device comprises: a gate metal layer provided above the upper surface of a semiconductor substrate; an emitter electrode provided above the upper surface of the semiconductor substrate; a first conductivity-type emitter region provided on the semiconductor substrate upper surface side in the transistor section; a gate trench section, which is provided on the semiconductor substrate upper surface side in the transistor section, is electrically connected to the gate metal layer, and is in contact with the emitter region; an emitter trench section, which is provided on the semiconductor substrate upper surface side in the diode section, and is electrically connected to the emitter electrode; and a dummy trench section, which is provided on the semiconductor substrate upper surface side, is electrically connected to the gate metal layer, and is not in contact with the emitter region.