A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided by the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a photonic crystal structure array. The photonic crystal structure array formed through the mesa structure from top to bottom, thereby realizing higher directional light emission, simpler structure and lower cost.

A support structure for receiving planar microchips, comprising a planar support substrate and at least two receiving elements. The receiving elements are connected to the carrier substrate and configured in such a way that they detachably hold a flat microchip between the at least two receiving elements in such a way that the microchip can be moved out with a defined minimum force transversely to a support structure plane.

An optical element includes a planar body having a circular profile including a plurality of annuli of decreasing width with increasing radius, where the circular profile includes a sequential arrangement of: (a) a first annulus including alternating azimuthal segments of high and low refractive index materials, (b) a second annulus including the high refractive index material, (c) a third annulus including alternating azimuthal segments of the high and low refractive index materials, and (d) a fourth annulus including the low refractive index material. The optical element may be configured to increase the light extraction efficiency and directionality of light output from a light emitting diode.

A semiconductor device includes a light emitting structure, and an interconnection bump including an under bump metallurgy (UBM) layer disposed on an electrode of at least one of the first and second conductivity-type semiconductor layers, and having a first surface disposed opposite to a surface of the electrode and a second surface extending from an edge of the first surface to be connected to the electrode, an intermetallic compound (IMC) disposed on the first surface of the UBM layer, a solder bump bonded to the UBM layer with the IMC therebetween, and a barrier layer disposed on the second surface of the UBM layer and substantially preventing the solder bump from being diffused into the second surface of the UBM layer.

The disclosure relates to a light emitting device. The light emitting device includes a first electrode, a first semiconductor layer, an active layer, a second semiconductor layer and a second electrode. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. At least one of the first electrode and the second electrode comprises a metal metamaterial layer. The metal metamaterial layer comprises a number of metamaterial units arranged to form a periodic array. A distance between the metal metamaterial layer and the active layer is less than or equal to 100 nanometers. The display device using the light emitting device is also provided.

In one aspect, structures are provided that comprise (a) a one-dimensional periodic plurality of layers, wherein at least two of the layers have a refractive index differential sufficient to provide effective contrast; and (b) one or more light-emitting nanostructure materials effectively positioned with respect to the refractive index differential interface, wherein the structure provides a polarized output emission.

A display device having a first flat region, a second flat region, and a foldable region located between the first flat region and the second flat region is provided. The display device includes a display layer, a supporting layer, and a cover layer. The supporting layer is disposed under the display layer and includes a first part and a second part separated from the first part by a gap. The cover layer is disposed on the display layer, wherein in a cross section view, a portion of the display layer and the first part of the supporting layer are overlapped in the first flat region, and another portion of the display layer and the second part of the supporting layer are overlapped in the second flat region.

A light-emitting device packaging structure is provided. The light-emitting device packaging structure includes a substrate, an array of light-emitting devices, an encapsulating layer, scattering particles, and a fluorescent material layer. The array of light-emitting devices is on the substrate. The encapsulating layer covers the array of light-emitting devices. The scattering particles are dispersed in the encapsulating layer. The fluorescent material layer is on the encapsulating layer.

The present invention discloses a nanoimprint apparatus and method useful in the cost-effective mass production of nanostructures over large areas on various substrates or surfaces, especially suitable for non-flat substrates or curved surfaces. The nanoimprint apparatus is composed of a wafer stage, a vacuum chuck, a substrate, a UV-curable nanoimprint resist and the like. The method implementing large-area nanopatterning based on the apparatus includes the following steps: (1) pretreatment, (2) imprinting, (3) curing, (4) demolding, (5) post treatment and (6) transferring of imprinted patterns. By utilizing the apparatus and the approach, large-area, and/or high-aspect-ratio micro/nanostructures can be mass produced, especially on a non-flat substrate or a curved surface or a fragile substrate at low cost and high throughput.

The invention provides a luminescent material (10) comprising quantum dots (100), wherein the luminescent material (10) further comprises a capping agent (110) coordinating to the quantum dots (10), wherein the capping agent comprises M.sub.xO.sub.y(OH).sub.z.sup.n, wherein M is selected from the group consisting of B, Al, P, S, V, Zn, Ga, Ge, As, Se, Nb, Mo, Cd, In, Sn, Sb, Te, Ta and W, wherein x1, y+z1, and wherein n indicates a positive or negative charge of the capping agent.