The invention provides a fluorescent strip, which covers a luminous body, wherein the fluorescent strip includes a fluorescent powder layer and at least two protective layers; and the fluorescent powder layer is sandwiched between the two protective layers, so that the falling of fluorescent powder is avoided, a function of protecting and limiting the fluorescent powder is realized, and the fluorescent powder is uniformly laid on a surface of the luminous body. The fluorescent strip further includes a light converging layer, wherein the light converging layer covers the outer protective layer; and light emitted from the luminous body sequentially passes through the inner protective layer, the fluorescent power layer, the outer protective layer and the light converging layer, and is converged into light rays through the light converging layer.

The present invention relates to a color-converting substrate of a light-emitting diode and a method for producing same, and more specifically to a color-converting substrate of a light-emitting diode capable of completely protecting the quantum dots (QD) supported in the interior from the exterior as hermetic sealing is possible, and a method for producing the color-converting substrate. To that end, provided are a color-conversion substrate of a light-emitting diode and a method for producing the color-conversion substrate, the color-conversion substrate of a light-emitting diode comprising: a first substrate and a second substrate arranged facing each other on a light-emitting diode; a sheet, having a hole, arranged in between the first and second substrates; QDs filling the hole; and sealing material disposed in between the first substrate and the lower surface of the sheet and in between the second substrate the upper surface of the sheet, wherein the sealing material is disposed along the edge of the hole, and the sheet is made of a substance allowing laser sealing of the sealing material, first substrate and second substrate.

A semiconductor diode structure has one or more light-emitting active layers and a redirection layer on the back surface that includes one or more of an array of nano-antennae, a partial photonic bandgap structure, a photonic crystal, or an array of meta-atoms or meta-molecules, and exhibits non-specular internal reflective redirection of output light incident thereon within the diode structure. One or both of the front or back surfaces exhibit position-dependent redirection, reflection, or transmission of the output light, including one or both of (i) position-dependent internal reflective redirection of output light incident on the back-surface or (ii) position-dependent internal reflective redirection, or position-dependent transmissive redirection, of output light incident on a front-surface layer or coating. Position dependence of luminance of output light exiting the diode structure can differ from position dependence of emission from the active layer. With uniform emission across the active layer, output light can exhibit position-dependent luminance.

A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode electrically is connected to the second semiconductor layer. The substrate has a number of three-dimensional nano-structures, and each of the number of three-dimensional nano-structures has a stepped structure.

An improved method to produce artificial light for plant cultivation, an illumination device with a semiconductor light emission solution and device suited for plant cultivation in a greenhouse and/or dark growth chamber environment are described. The best mode is considered to be a lighting device with LEDs that produces an emission spectrum similar to the photosynthetically active radiation (PAR) spectrum in a dark growth chamber. The methods and arrangements allow more precise spectral tuning of the emission spectrum for lights used in plant (310, 311) cultivation. Therefore unexpected improvements in the photomorphogenetic control of plant growth, and further improvements in plant production, especially in dark growth chambers, such as basements, are realized.

A laser structure includes a substrate, a buffer layer formed on the substrate and a light emitting diode (LED) formed on the buffer layer. A photonic crystal layer is formed on the LED. A monolayer semiconductor nanocavity laser is formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED, wherein the LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.

A system and method of ambient/pervasive user experience (including healthcare) is described, utilizing (a) Super System on Chip(s), (b) intelligent/machine learning algorithm(s), (c) high resolution holographic display(s), (d) augmented reality devices and/or (f) point of care diagnostics system(s).

In an embodiment a method for manufacturing at least one electronic component includes providing a second surface area of the component adjacent to a first surface area, wherein the second surface area is repulsive to a first fluid to be applied, applying the first fluid without additional pressurization to the first and/or second surface area, wherein the first surface area is wetted by the first fluid and the first fluid is repelled from the second surface area and applying a second fluid to the first surface area, to the second surface area and/or to a surface area of the solidified first fluid, after solidification of the first fluid applied to the first surface area, wherein applying the second fluid includes applying a positive pressure, a plasma action and/or a compression molding, and wherein the second fluid wets the second surface area.

The present invention is related to solid state light emitting diodes (LEDs), photodetector/photovoltaic devices, displays, applications and methods for making the same. As demonstrated experimentally, the LEDs, as disclosed herein, have high light emission efficiency, high contrast, high brightness, low ambient light reflection, low light glare, and a tunable display viewing angle. The same LED disclosed here can be used as high efficiency displays and high efficiency photovoltaic device or photodetectors. This means that the same device, where used in array form, can be used as the display (LED operation mode) and power supply (photovoltaic device mode) and camera (photodetector and imaging mode).

Provided are a semiconductor structure and a preparation method thereof. The semiconductor structure includes a substrate, a buffer layer located on the substrate and a light-emitting structure located on a side of the buffer layer away from the substrate. The buffer layer includes a first region and a second region surrounding the first region. The semiconductor structure further includes a photoresist structure. The photoresist structure is formed by selectively etching the second region of the buffer layer, and the photoresist structure is configured to suppress lateral propagation of light emitted by the light-emitting structure. The light-emitting structure includes a light-emitting unit, and the light-emitting unit is disposed corresponding to the first region.