A method of manufacturing a light emitting module includes mounting a plurality of unit pixels on a module substrate, thermally curing a light diffusion film and a black film, laminating the light diffusion film and the black film, forming a molding layer to surround side surfaces of the plurality of unit pixels by disposing the laminated light diffusion film and the black film on the module substrate, and pressing the light diffusion film and the black film; and cutting and removing edges of the module substrate and the molding layer. The molding layer includes a light diffusion layer and a black molding layer disposed on the light diffusion layer.

A light-emitting device includes: a semiconductor light-emitting structure layer configured to have a photonic crystal layer; and a nanoantenna phosphor configured to be placed on an emission surface of the semiconductor light-emitting structure layer and to include a wavelength converter configured to convert a wavelength of light emitted from the semiconductor light-emitting structure layer to generate wavelength-converted light and an antenna array configured to have a plurality of nanoantennas periodically arranged on the wavelength converter.

An optoelectronic device includes a glass carrier, at least one light-scattering layer applied to the glass carrier, and at least one surface-emitting component in a chip size package with an emission surface and a surface facing away from the emission surface having a first and a second contact pad. The emission surface is arranged on the at least one light-scattering layer by way of an adhesive. At least one contact line contacts the second contact pad of the at least one surface-emitting component and extends along a side surface of the at least one surface-emitting component adjacent to the second contact pad in a direction of the glass carrier. A light-shaping structure is arranged on a surface of the glass carrier facing away from the surface-emitting component.

A light emitting diode display device includes a display panel including a light emitting diode for each sub-pixel defined on a substrate, and an optical cover window positioned to correspond to a transmission direction of a light emitted from the display panel and including a plurality of pyramid patterns, wherein the plurality of pyramid patterns each include an inner bevel surface corresponding to an arrangement error of the light emitting diodes.

A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and an extension electrode. The semiconductor stack includes a first semiconductor structure, an active structure, and a second semiconductor structure stacked in sequence along a vertical direction. The third semiconductor structure connects to the first semiconductor structure and includes a first part. The dielectric layer connects to the first semiconductor structure and includes an opening corresponding to the first part. The extension electrode connects to the second semiconductor structure without overlapping with the third semiconductor 10 structure in the vertical direction. The first part has a near electrode end and a far electrode end opposite to the near electrode end, and a distance from the far electrode end to the opening is smaller than a distance from the near electrode end to the opening.

A display device and a method for manufacturing a display device are provided. A display device includes: a base layer; first and second electrodes which are located on the base layer; at least one light emitting diode which is located between the first and second electrodes and configured to emit light; and a protective layer which is located on the base layer and arranged to cover at least the first and second electrodes and the light emitting diode, and the protective layer includes a substrate layer and a light emission pattern formed by at least a partial region protruding from a surface of the substrate layer.

An optoelectronic light emitting device includes a light emitting diode configured to emit a first radiation, a conversion layer including at least one planar quantum well configured to convert the first radiation into a second radiation, by photoluminescence, a grating for extracting the second radiation being etched on an upper face of the layer, and a lateral reflector having a reflective surface which extends facing part at least of a lateral surface of the conversion layer.

A device is provided. The device includes a converter layer and a filter. The converter layer includes a light emitting surface and an opposite side of the light emitting surface. The filter is deposited on the opposite side. The filter influences a radiation profile to increase a coupling efficiency of a pump radiation into the converter layer.

The invention relates to various aspects of a -LED or a -LED array for augmented reality or lighting applications, in particular in the automotive field. The -LED is characterized by particularly small dimensions in the range of a few m.

A method of manufacturing a light emitting module includes mounting a plurality of unit pixels on a module substrate, thermally curing a light diffusion film and a black film, laminating the light diffusion film and the black film, forming a molding layer to surround side surfaces of the plurality of unit pixels by disposing the laminated light diffusion film and the black film on the module substrate, and pressing the light diffusion film and the black film; and cutting and removing edges of the module substrate and the molding layer. The molding layer includes a light diffusion layer and a black molding layer disposed on the light diffusion layer.