An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer.

There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs.

A method of forming a Light Emitting Diode (LED) precursor comprising: forming a first semiconducting layer comprising a Group III-nitride on a substrate, selectively removing a portion of the first semiconducting layer to form a mesa structure, and forming a monolithic LED structure. According to the method, the first semiconducting layer has a growth surface on an opposite side of the first semiconducting layer to the substrate. According to the method, the first semiconducting layer is selectively removed to form the mesa structure such that the growth surface of the first semiconducting layer comprises a mesa surface and a bulk semiconducting surface. Further, the monolithic LED structure is formed on the growth surface of the first semiconducting layer such that the monolithic LED structure covers the mesa surface and the bulk semiconducting surface, the monolithic LED structure comprising a plurality of layers, each layer comprising a Group III-nitride, including a second semiconducting layer, an active layer provided on the second semiconducting layer, the active layer configured to generate light, and a p-type semiconducting layer provided on the active layer. A potential barrier is provided between a first portion of the p-type semiconducting layer covering the mesa surface and a second portion of the p-type semiconducting layer covering the bulk semiconducting surface. The potential barrier surrounds the first portion of the p-type semiconducting layer covering the mesa surface.

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

A method for producing an electronic semiconductor chip and a semiconductor chip are disclosed. In embodiments, the method includes providing a growth substrate having a growth surface formed by a flat region having a plurality of three-dimensional surface structures on the flat region, directly applying a nucleation layer of oxygen-containing AlN over a large area to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the flat region.

Provided is a phosphor converted LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions are separated by a tunnel junction. One multiple quantum well is embedded between the n- and p-layers of the first junction and another multiple quantum well is embedded between the n- and p-layers of the second junction. The peak emission wavelengths of the two junctions are both between 400 nm and 500 nm and are at least 5 nm apart.

A method of manufacturing a micro-light-emitting diode display includes processing a wafer to form a plurality of functional chips integral with the wafer. A plurality of wafer tiles is defined in the wafer, wherein each wafer tile is composed of a cluster of functional chips. The wafer tiles are singulated by wafer dicing. A plurality of separate wafer tiles is bonded to a semiconductor wafer by hybrid bonding. The functional chips are singulated together with chips of the semiconductor wafer by dicing the bonded-together wafer tiles and semiconductor wafer.

A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided in the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a photonic crystal structure array, which is formed in the mesa structure, thereby realizing higher directional light emission, simpler structure and lower cost. Furthermore, the re-growth layer is formed on at least one part of the sidewall of mesa structure, which decreases the non-radiation recombination at the sidewall surface of the mesa structure, improving the light emission efficiency and the image quality.

An n-doped semiconductor layer spans multiple LEDs of an array, in some cases the entire array. Corresponding p-contacts are localized on the p-doped semiconductor layer of each LED to only a central region of that LED and are electrically isolated from the p-contacts of adjacent LEDs. Corresponding n-contacts (i) are localized to only peripheral regions of the corresponding LEDs, (ii) extend through the p-doped layers and the active regions of adjacent LEDs to make contact with the continuous n-doped layer, and (iii) are electrically isolated from those p-doped layers and active regions. In some cases the nonzero combined thickness of the n-doped layer, p-doped layer, and the active region can be less than 5 m.

Disclosed is a method of manufacturing a photoelectronic device having multiple wavelengths, the method including forming a plurality of photo-device layers having different emission wavelengths on a substrate, each photo-device layer including a first type semiconductor layer, an active layer, and a second type semiconductor layer from the substrate, forming a buffer layer between the photo-device layers, exposing the second type semiconductor layer to top of each photo-device layer, and opening the first type semiconductor layer on the bottom of each photo-device layer to form a plurality of photo-device portions having different emission wavelengths in a horizontal direction based on the substrate, forming a first electrode in one region on the opened first type semiconductor layer, and forming a second electrode on each photo-device portion.