Disclosed is an optimal structure that improves the spatial arrangement efficiency of electrodes and further increases luminous efficacy by designing the shape and structure of photo-device portions and controlling open areas. In particular, provided is a full-color RGB pixel that exhibits excellent reproducibility over a large area and can be mass-produced by forming a plurality of photo-device layers, each including an active layer and a common semiconductor layer in a vertical direction, and forming a plurality of photo-device portions in a horizontal direction on a substrate by selective etching and opening processes.

The invention relates to a process for fabricating a semiconductor diode (1) via transfer of a semiconductor stack (20) then local etching to form a semiconductor pad (30), the production of the semiconductor pad (30) comprising a plurality of sequences comprising a dry etch that leaves a residual segment (23.1; 22.1), formation of a hard-mask spacer (42.1; 43.1), then a wet etch of the residual segment (23.1; 22.1).

A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 m to about 10 m, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.

Pixelated-LED chips include substrate sidewalls with sidewall involutions and/or increased sidewall surface area regions to affect light extraction therefrom. A LED lighting device incorporates a superstrate that supports lumiphoric material and includes sidewalls with sidewall involutions and/or increased sidewall surface area regions. Methods for fabricating sidewall features may include etching (e.g., deep etching) of substrate or superstrate materials, such as by using an etch mask having edges with non-linear shapes to produce and/or enhance sidewall involutions when an etchant is supplied through the etch mask to selectively consume substrate or superstrate material.

A vertical thin-film (VTF) light emitting diode (LED) having embedded contacts is described. The vertical thin-film (VTF) light emitting diode (LED) having embedded contacts has structure where the metal layer constitutes both bondpad(s) and associated electric contact to the semiconductor. The metal layer is embedded and, hence, no longer blocking light from the light emitting surface. The vertical thin-film (VTF) light emitting diode (LED) having embedded contacts comprises a plurality of group III-V semiconductor material layers, including binary, ternary, and quaternary alloys of gallium (Ga), aluminum (Al), indium (In), and phosphorus (P) and a multiple quantum well layer on a substrate. At least one ne of the plurality of group III-V semiconductor material layers comprise an aluminum indium phosphide (AlInP) layer or a low confinement layer (LCL) comprising aluminum indium gallium phosphide (AlInGaP).

A light-emitting apparatus includes: a transparent substrate; electrically conductive traces, bond pads, or land pads on the substrate; LEDs; and transparent molded material. The traces, bond pads, and land pads can be transparent, or can be sufficiently small and sufficiently sparse, to enable visual observation of a scene through the substrate and the traces, bond pads, or land pads. The LEDs are connected to the bond pads, and are sufficiently small and sparse so as to enable visual observation of the scene through them. The molded material can be a thermoplastic material or a thermoset material and is molded directly onto the substrate surface, without any intervening adhesive, and encapsulates the LEDs and the traces, bond pads, or land pads. Molten material or liquid precursors are injected into a mold enclosing the substrate with the LEDs and the traces, bond pads, or land pads.

A light-emitting diode (LED) and a manufacturing method thereof are disclosed. The LED includes: a substrate, a light-tight reflective layer, an inner epitaxial layer, an outer epitaxial layer, a non-conducting layer, an ohmic metallic body, a first electrode, and a second electrode. The inner epitaxial layer and the outer epitaxial layer are separated from each other by a separation space. In a view made from a top side of the LED, the separation space forms a closed path and surrounds the light exit hole. The separation space provides an effect of blocking an electrical current and a light emission area in the inner epitaxial layer. By redirecting light emitting from a lateral side of the inner epitaxial layer toward a top side of the LED, the LED shows a low side light ratio.

Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

Devices and methods of manufacturing light emitting devices including selective area epitaxy deposited N-polar semiconductors. The devices and methods can be utilized to realize high-quality, high-performance and/or high-efficiency nanowire based light emitting devices.

An infrared light-emitting diode (LED) element is capable of emitting infrared light having a peak wavelength of 1350 nm to 2000 nm and includes: a first stacked body including a first semiconductor that exhibits a first conductivity type, and an intermediate layer having a thickness of 15 nm or more; an active layer disposed on or over the intermediate layer of the first stacked body; and a second stacked body including a second semiconductor layer that exhibits a second conductivity type different from at least the first conductivity type and is disposed on or over the active layer. A relationship E.sub.a<E.sub.m<E.sub.p holds, where E.sub.a represents the band gap energy of the active layer, E.sub.m represents the band gap energy of the intermediate layer, and E.sub.p represents the band gap energy of the first semiconductor layer.