An interlayer insulating film having an upper portion and a lower portion is formed on a first main surface of a semiconductor substrate. Furthermore, a contact hole penetrating the interlayer insulating film is formed, and a contact member is formed in the contact hole. In the cross-sectional view, the width of the contact hole in a first direction is wider at an upper end than at a lower end of the contact hole, and is wider at a depth corresponding to the upper portion of the interlayer insulating film than at a depth corresponding to the lower portion of the interlayer insulating film.

A semiconductor device includes a semiconductor substrate having an upper surface and a lower surface, an element region containing a semiconductor element and a peripheral region surrounding the element region in plan view. The semiconductor substrate in the peripheral region includes an N-type drift layer, an N++ type channel stop layer disposed on the upper surface side relative to the N-type drift layer, which channel stop layer is at least one annular N++ type channel stop layer surrounding the element region, and an N type guard ring layer disposed on the upper surface side relative to the N-type drift layer.

A semiconductor device includes a structure layer having a first surface opposite to a second surface. A collector region is disposed in the structure layer and located on the first surface. An emitter region is disposed in the structure layer and located on the second surface. A first trench is disposed in the structure layer and extends downward from the first surface into the emitter region. A gate electrode is disposed in the first trench. A second trench is laterally separated from the first trench. An emitter contact is disposed in the second trench and extends downward into the emitter region. An emitter electrode is disposed under the second surface and in direct contact with the emitter region. A collector electrode is disposed above the first surface and electrically connected to the collector region.

A semiconductor device according to the present disclosure includes a first trench electrode and a second trench electrode, in which the first trench electrode has a two-stage structure including a lower electrode provided on a lower side that is a side of a second main electrode, an upper electrode provided on an upper side that is a side of a first main electrode, a first trench insulating film covering an inner surface of the trench, and a partition insulating film provided between the lower electrode and the upper electrode, the upper electrode has a recess in a portion corresponding to an upper side of the lower electrode, and a side wall of the recess serves as a pointed portion protruding toward a bottom portion of the trench, the partition insulating film is provided to cover an inside of the recess and the pointed portion.

A semiconductor device and method of making is described. A substrate (1) topped by a buffer layer (2) of a first conductivity type and one or more epitaxial layers (3) of the same type. In the topmost epitaxial layer, a body region (4) of a second conductivity type is formed, along with a source region (5) of the first conductivity type. Beneath the source region lies a buried body contact region (6) of the second conductivity type. A trench (16) in the source region provides access to the body contact region and is narrower than it. Ohmic contacts include a source contact (9) overlapping the source region on trench sidewalls and a body contact (10) overlapping the body contact region at the trench bottom. Between body regions of neighboring cells, a JFET region (13) is formed.

Provided is a semiconductor device, comprising: a semiconductor substrate; an interlayer dielectric film provided on the semiconductor substrate, having contact holes provided thereon, wherein the contact holes include a contact hole with a stepped portion on a sidewall; and a contact portion provided in the contact hole, wherein the contact portion has a barrier layer provided on the sidewall and a bottom surface of the contact hole, wherein the barrier layer has: a first region in direct contact with the stepped portion; and a second region in direct contact with the sidewall of the contact hole in a region different from the first region, wherein when a film thickness of a thickest portion of the first region is T and a film thickness of a thinnest portion of the second region is t, 0.3Tt0.95T is satisfied.

Provided is a manufacturing method including: forming a contact trench in a mesa portion; forming a contact dielectric film on a side wall and a bottom surface of the contact trench; etching a part of the contact dielectric film to expose a first emitter portion on the side wall of the contact trench and to expose a region of a second conductivity type on the bottom surface of the contact trench; and filling an inside of the contact trench with a conductive material to bring the conductive material into contact with the first emitter portion and the region of the second conductivity type.