A crystal pattern forming method includes: an electromagnetic wave absorbing layer forming process for forming an electromagnetic wave absorbing layer on one of surfaces of a substrate; an amorphous film forming process for forming an amorphous film on the electromagnetic wave absorbing layer; a mask forming process for forming an electromagnetic wave blocking mask for blocking an electromagnetic wave on the other one of the surfaces of the substrate; and a crystallizing process for causing the substrate to be irradiated with the electromagnetic wave from the other one of the surfaces of the substrate through the electromagnetic wave blocking mask to crystallize a given region in the amorphous film. In the mask forming process, a recessed structure is formed on the other one of the surfaces of the substrate, by selectively removing the other one of the surfaces of the substrate to form a recessed portion.

Disclosed is a method of manufacturing a piezoelectric substrate, the method including: forming an intermediate layer of Ti and a lower electrode of Pt oriented in a (111) axis direction on a substrate without heating the substrate; applying a coating liquid for forming an orientation control layer made of lead titanate onto the lower electrode; drying the coating liquid at a predetermined temperature to form an orientation control layer precursor made of lead titanate; applying a coating liquid for forming a piezoelectric thin film made of lead zirconate titanate; drying the coating liquid at a predetermined temperature to form a piezoelectric precursor made of a lead zirconate titanate precursor; and collectively firing the orientation control layer precursor and the piezoelectric precursor to crystallize both the precursors, to thereby form a piezoelectric thin film made of lead zirconate titanate preferentially oriented in a (110) plane.

The ultrasound probe includes a piezoelectric element including a piezoelectric composition and an electrode that applies a voltage to the piezoelectric composition. The piezoelectric composition has piezoelectric characteristics expressed by any coordinates included in a region formed by a polyhedron having a plurality of predetermined points as vertexes in Cartesian coordinates (k.sub.eff, ε.sub.33.sup.S, E.sub.c) including variables k.sub.eff, ε.sub.33.sup.S and E.sub.c.

A piezoelectric thin film element having a first electrode, a second electrode and a piezoelectric thin film between the electrodes, wherein the thin film comprises a laminate having two or more piezoelectric thin film layers and wherein a first thin film layer is doped by one or more dopants and a second film layer is doped by one or more dopants and wherein at least one dopant of the second thin film layer is different from the dopant or dopants of the first thin film layer.

Provided is a surface acoustic wave device using a novel and steadily suppliable piezoelectric material that is resistant to a high-temperature environment and enables the surface acoustic wave device to use a 2 GHz to 2.5 GHz band or higher. The surface acoustic wave device includes: a piezoelectric substrate formed from a monocrystal of gehlenite (CAS: Ca2Al(AlSi)O7); and interdigital transducers formed on a surface acoustic wave propagation plane of the piezoelectric substrate.

A piezoelectric actuator includes a piezoelectric element that includes a piezoelectric unit including a ferroelectric, which has an asymmetric bipolar P-E curve, a capacitor connected to the piezoelectric unit in series, and a resistor connected to the capacitor in series and connected to the ferroelectric in parallel; and a drive unit that inputs a drive waveform Vd, which includes a DC offset component of which polarity is opposite to polarization of the ferroelectric, to the piezoelectric element to drive the piezoelectric element. A value of a coercive electric field Ec.sub.1, a value of a coercive electric field Ec.sub.2, the capacitance C.sub.s of the capacitor, the capacitance C.sub.pz of the ferroelectric, combined resistance R.sub.p of the resistance of the resistor and the resistance of the ferroelectric, and a fundamental angular frequency ω of the drive waveform satisfy Expressions I to III, wherein

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The disclosed embodiments are generally directed to optical systems. The optical systems may include a proximal lens that may transmit light toward an eye of a user. The optical systems may also include a distal lens that may, in combination with the proximal lens, correct for at least a portion of a refractive error of the eye of the user. The optical systems may further include a selective transmission interface. The selective transmission interface may couple the proximal lens to the distal lens, transmits light having a selected property, and does not transmit light that does not have the selected property. The optical system can also include an accommodative lens, such as a liquid lens. Various other methods, systems, and computer-readable media are also disclosed.

A piezoelectric element exhibiting a small leakage current density and high reliability as compared with a KNN thin film piezoelectric element in the related art is provided. The piezoelectric element is characterized by including a lower electrode, a piezoelectric layer primarily made from potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO.sub.3, and an upper electrode, wherein the piezoelectric layer is present between the lower electrode and the upper electrode, and the piezoelectric layer has the value determined by dividing the maximum value of intensity of a diffraction peak, where the angle of 2θ is within the range of 21.1°≦2θ≦23.4° in the X-ray diffraction pattern (2θ/θ), by the intensity of a diffraction peak, where 2θ is within the range of 30.1°≦2θ≦33.3°, of 0.04 or less.

The invention relates to a microelectromechanical resonator device comprising a support structure and a semiconductor resonator plate doped to a doping concentration with an n-type doping agent and being capable of resonating in a width-extensional resonance mode. In addition, there is at least one anchor suspending the resonator plate to the support structure and an actuator for exciting the width-extensional resonance mode into the resonator plate. According to the invention, the resonator plate is doped to a doping concentration of 1.2*10.sup.20 cm.sup.−3 or more and has a shape which, in combination with said doping concentration and in said width-extensional resonance mode, provides the second order temperature coefficient of frequency (TCF.sub.2) to be 12 ppb/C.sup.2 or less at least at one temperature. Several practical implementations are presented.

There is provided a piezoelectric element which includes a first electrode which is formed on a substrate, a piezoelectric layer which is formed on the first electrode, and is formed from a compound oxide having an ABO.sub.3 type perovskite structure in which potassium (K), sodium (Na), niobium (Nb), and manganese (Mn) are provided, and a second electrode which is formed on the piezoelectric layer. The manganese includes bivalent manganese (Mn.sup.2+), trivalent manganese (Mn.sup.3+), and tetravalent manganese (Mn.sup.4+). A molar ratio (Mn.sup.2+/Mn.sup.3++Mn.sup.4+) of the bivalent manganese to a sum of the trivalent manganese and the tetravalent manganese is equal to or greater than 0.31.